2SK1112 Search Results

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1112 Field Effect Transistor Silicon N Channel MOSType L2-jt-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance • R DS(ON) = 0.12£2 (Typ.)

2SK1112

Abstract: transistor 2sk1112
Contextual Info: TOSHIBA 2SK1112 Field Effect Transistor Silicon N Channel MOS Type L2-rc-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance " R ds (ON) = 0 .1 2£2 (Typ.)

2SK1112

Abstract: S2-5V relay transistor 2sk1112
Contextual Info: TOSHIBA Discrete Semiconductors 2SK1112 Field Effect Transistor Silicon N Channel MOSType L2-t>MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Fe a tu re s • 4-Volt Gate Drive • Low Drain-Source ON Resistance

YTF450

Abstract: YTF451 YTFP450
Contextual Info: Replacement Guide T y p e No. E q u i v a le n t/ r e c o m m e n d e d p r o d u c t T y p e N o. 2SK1251 2SK1112 YTF450 2SK1252 2SK1113 YTF451 2SJ123 2SJ147 YTFP450 YTF441 - YTF442 YTF443 YTF452 YTF453 YTF440 2SK1488 E q u i v a le n t/ r e c o m m e n d e d p r o d u c t

L5A relay

Abstract: 2SK1112
Contextual Info: 2SK1112 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7T-MOSm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS Unit in mm 6.8MAX FEATURES : • 4-Volt Gate Drive • Low Drain-Source ON Resistance

2SK2056

Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1

2SK3567 equivalent

Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2

MG150Q1JS44

Abstract: 1S1885 diode MG150Q1JS
Contextual Info: MG150Q1JS44 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q1JS44 Unit in mm High Power Switching Applications Chopper Applications • High input impedance · High speed: tf = 0.4µs max. · Low saturation voltage · Enhancement−mode · The electrodes are isolated from case.

2SK1649

Abstract: 2SK537 2SK1349 2SK1377 2sk538 2SK788 2SK1513 2SK1723 2SK889 2SK941
Contextual Info: Power MOS FET Lineup [Characteristics Chart] 6. L2-7T-M0S III V dss = 60— 10OV type Low Voltage Series Operable at Logic Level. Maximum ratings (A) 0.8 0.8 5 -5 Voss (V) Package Pd (W) Ros(ON) (Q) Vos (V) TYP. MAX. 60 0.5 POWER-MINI 0.40 0.55 10 60 0.9 TO-92MOD

2SK1112

Abstract: IL1B
Contextual Info: ö 5ë 7S* Sn o 00 it »ri dfQl ? ö IS 5fv mPSIimìn xtr rï n V -*• r • 3E Xír 3 P ñ -iV a > v. . 1 >* 3¡ £ m ss 3* iS îff ít « a » 50 r+ cr n!l n iY a 1 -X ~r iÜ » • v: I •• fri "0 o P+50 sr o cr i p -n Ta = 2 5°C TOSHIBA rv ctn

j2y transistor

Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Contextual Info: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,

2SK1143

Abstract: 2SK1142 2SK1117 2SK1139 2SK1121 2SK1138 2SK1118 2SK1136 2sk1114 2SK1105
Contextual Info: r. . . . m *t £ £ m ÌÈ Í Í t H ^ fë aË 2 P d /P c h «1 £ Hf m f* V * 2SKU05 -M tn m SW-Reg, UPS, DDC MOS N E 800 DSS 2SK1108 NEC C-MIC, Imp-C J N D 20 DSX 2SK1109 NEC (V) » * ±20 S (A) & 3 D (W) lass (max) (A) 80 ±100n 10m G 100m fà % (min) (max) Vds

2SK2056

Abstract: 2SK1349 2SK1603 2sk1601 2SK1363 2SK1344 2SK1768
Contextual Info: Power M O S FET jt-MOS I!-5 F1 Maximum Rating Application A C 2 2 0 V Input Switching Power Supply Type No. R d s (ON)(£l) Package •2SK2274 2SK1602 2SK1600 2SK1858 2SK2056 2SK2089 2SK2038 2SK2222 2SK2077 2SK2319 2SK2078 2 SK 2 3 2 0 2SK1603 2SK1601 2SK1643

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

2SK3566 equivalent

Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
Contextual Info: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2

2SK1603

Abstract: 2SK3561 equivalent un 1044 2SJ238 2sk1603 datasheet 2SK2039 2SK2030 2SK2056 2SK1487 2SK1078
Contextual Info: 2004-3 .TW M .CO .TW 00Y 1 . OM W WW .100Y.C M.TW O W W WW .100Y.C M.TW T . O W OM W Y.C WW .100Y.C M.TW T . O W OM W.1 WW .100Y.C M.TW WW .100Y.C M.TW O W O W WW .100Y.C M.TW W WW .100Y.C M.TW T . O W M WW 00Y.CO .TW .CO .TW WW .100Y.C M.TW Y W O W OM W.1

2SK2056

Abstract: 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402
Contextual Info: TOSHIBA TOSHIBA POWER MOSFETs 1Q, 1999 Alphanumerically Toshiba Power MOSFET List Alphanumerically Part VDSS RDS ON Number (V) (Ω) ID (A) Package Generation Status 2SJ147 -60 0.2 -12 TO-220IS π -MOSII Non-Promotion 2SJ183 -60 0.35 -5 POWER MOLD L - π -MOSIII

2sk4110

Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
Contextual Info: 2007-3 PRODUCT GUIDE Power MOSFETs 1.Features and Structure. 2 2.New Power MOSFET Products . 3

2SK2056

Abstract: 2SK1603 2SK1377 2SK537 2SK1723 2SK1213 transistor 2SK1603 2sk1603 datasheet 2SJ239 2SK2352
Contextual Info: [ 9 ] Superseded and Discontinued Product List [ 9 ] Superseded and Discontinued Product List [ 9 ] Superseded and Discontinued Product List 1. Superseded Products The following listed products are no longer being promoted in Toshiba’s marketing. Please refer to Recommended Replacement Part Number.

2sk1603

Abstract: 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915
Contextual Info: Power MOS FET Type No. index Main Characteristics Type No. Series Nam e, Package Type Voss V 2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2SJ240 2SJ241 2SJ304 2SJ315 2SJ312 2SJ313 2SJ334 2SJ338 2SJ349 2SJ359 2SJ360 2SJ377 2SJ378

2SJ239

Abstract: 2SK2030 2SJ201Y 2sk1 2SK2057 2SK2200TP 2sk1544 2SJ201-Y 2SK1079 2SJ238
Contextual Info: MOSFET Characteristic Chart M axim u m R ating Id |Am ps| V oss [Volts] R d s ON Pd [W atts] TYP. [Ohm s| M AX. lO hm sI V qs [Volts] Id [Amps] Vtn (Volts] | ID - 1 mA] A p plicatio n DC/DC converter 2SJ147 T0-220(IS) -12 -60 40 0.17 0.2 -10 -6 -1.5 ~ -3.5

Marcon capacitor Co

Abstract: CACFM D1N54 2SC3279 equivalent 2SK1112 CACFM 1A220M Marcon 2SC3279 41178 8436
Contextual Info: Contents Features . 1 Applications. 1 Block d ia g ra m . 1 Pin A s s ig n m e n t. ; .

2SK1603

Abstract: 2SK2056 2SK1377 2SK1349 2sk2402 2SK1117 2SK1213 transistor 2SK1603 2SK423 2sk1855
Contextual Info: Small-Signal MOSFETs Toshiba presents a range of small-signal MOSFET S-MOS devices developed for various switching and interface applications. The high-current S-MOS Family has been developed principally for high-current switching applications and has been added to the S-MOS product line. The devices which comprise this family exhibit ultra-low ON-resistance (RDS(ON) and

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle