2SK1488 Search Results

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1488 Field Effect Transistor Unit in mm Silicon N Channel MOSType ji-MOS III.5 High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • Low Drain-Source ON Resistance ' Rds (ON) = 0.75Q (Typ.)

vds500v

Contextual Info: 2SK1488 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ff-MOSm-5 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 15.9WLX. «3.2 ± 02 él FEATURES: • Low Drain-Source ON Resistance : RDS(0N)= 0.64Q (Typ.)

4011 BP TOSHIBA

Abstract: 2SK1488 4011 TOSHIBA
Contextual Info: TOSHIBA 2SK1488 Field Effect Transistor Unit in m m Silicon N Channel MOS Type rc-MOS III.5 High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • Low Drain-Source ON Resistance “ F*DS(ON) = 0.75£2 (Typ.) • High Forward Transfer Admittance

YTF450

Abstract: YTF451 YTFP450
Contextual Info: Replacement Guide T y p e No. E q u i v a le n t/ r e c o m m e n d e d p r o d u c t T y p e N o. 2SK1251 2SK1112 YTF450 2SK1252 2SK1113 YTF451 2SJ123 2SJ147 YTFP450 YTF441 - YTF442 YTF443 YTF452 YTF453 YTF440 2SK1488 E q u i v a le n t/ r e c o m m e n d e d p r o d u c t

2SK1488

Abstract: SC-65
Contextual Info: TOSHIBA Discrete Sem iconductors 2SK1488 Field Effect Transistor Unit in mm Silicon N Channel MOSType jt-MOS III.5 High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • Low Drain-Source ON Resistance ' Rds(ON) =

transistor 2SK1603

Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358
Contextual Info: H it'll Voltage M SFKTs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all

2sj239

Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
Contextual Info: MOSFET Product Matrix VdssM * 100 *1 20 60 Id A * 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]

TE85L PACKING TE85

Abstract: Reel Taping Specification JEDEC toshiba tape and reel 2SK851 toshiba packing naming 2SK405 equivalent 2SK1529 LT 5212 2sk1529/2sj200 equivalent 2SJ200 equivalent
Contextual Info: TO SHIBA Quick Reference I. Quick Reference Table for Taping 1. TO-92 Device PACKING TAPING TYPE NO. REEL TPE1 DIMENSIONAL OUTLINE d ir e c t io n of tape feed QTY. 2.000PCS/ REEL 1 2 .7 AMMO PACK 2. TPER1 D IR E C T IO N OF TAPE FEED TPE2 D IR E C T IO N OF

2SK2056

Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1

STR-G6551

Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision

2SK3567 equivalent

Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2SK3566 equivalent

Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
Contextual Info: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2

2SK1603

Abstract: 2SK3561 equivalent un 1044 2SJ238 2sk1603 datasheet 2SK2039 2SK2030 2SK2056 2SK1487 2SK1078
Contextual Info: 2004-3 .TW M .CO .TW 00Y 1 . OM W WW .100Y.C M.TW O W W WW .100Y.C M.TW T . O W OM W Y.C WW .100Y.C M.TW T . O W OM W.1 WW .100Y.C M.TW WW .100Y.C M.TW O W O W WW .100Y.C M.TW W WW .100Y.C M.TW T . O W M WW 00Y.CO .TW .CO .TW WW .100Y.C M.TW Y W O W OM W.1

2sk4110

Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
Contextual Info: 2007-3 PRODUCT GUIDE Power MOSFETs 1.Features and Structure. 2 2.New Power MOSFET Products . 3

2SK1487

Abstract: LM 1495 2sk1477 2SK1486 2SK1480 1494z 2SK1470 2SK1482 2SK1491 2SK1465
Contextual Info: - 106 - M % tt « m £ m it Í V Ì 1 % K £ ft ft « V* V P d /P c h *t* (V) * * ft * (A) (W) Ig s s (max) (A) Vg s (V) (min) (A) (max) V d s (A) (V) (Ta=25°C) ft 4# % (min) (max) V d s (V) (V) (V) £ m (min) (S) Id (A) Vd s (V) Id (A) 2SK1465 HS SW

TF843

Abstract: 2SK1574 2sk to-92 S K 1 0 4 5 Y K/I-TD238-4
Contextual Info: TOSIBA 7T-MOS FET PRODUCT MATRIX 12 [ 400 ▼2SK 945 5.0 ♦ 2 S K 5 2 8 Î2 .2 ) 450 * 500 600 900 850 ( ) : RDS (ON) MAX. ] AND S-NO : UNDER DEVELOPM ENT 10 0 0 •2SK 537I9.0) ♦ 2 S K 5 2 9 Î2 .6 : ■ Y T F 8 2 3 (4 .0 ) ■Y T F821(3.0) ■Y T F822(4.0)

K2057

Abstract: 2SK2236 k20s 2SK2146 2sk1855 2SK2057 2SK2150 k205 2SK185 2SK1854
Contextual Info: POWER MOS FET 3.7T-MOSIII*5 V dss= 250~600V type High withstanding series, well suited for applications with Ballast and A C=100V IN switching power supplies. • G uaran teed V gss = ± 30V for all types ■ Im proved high w ithstanding c a rac te ristic s by optimizing the cell configuration

2SK2056

Abstract: 2SK1603 2SK1377 2SK537 2SK1723 2SK1213 transistor 2SK1603 2sk1603 datasheet 2SJ239 2SK2352
Contextual Info: [ 9 ] Superseded and Discontinued Product List [ 9 ] Superseded and Discontinued Product List [ 9 ] Superseded and Discontinued Product List 1. Superseded Products The following listed products are no longer being promoted in Toshiba’s marketing. Please refer to Recommended Replacement Part Number.

SSH6N80

Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
Contextual Info: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205

2SK405 equivalent

Abstract: 2sk405 2sj115 YTF541 2SJ200 equivalent YTAF630 2SK2382 equivalent 2SK941 equivalent 2SK2232 equivalent YTF541 equivalent YTF540
Contextual Info: 10\Discontinued POWER MOS FET Products The types listed below are discontinued products, or willbe descontinued. When adopting them for use in development of new systems, please consider the equivalent and recommended types listed in parallel with the discontinued products.

K1118

Abstract: k1118 transistor MOSFET transistor k1118 transistor k1118 2SK1603 2SK1723 transistor 2SK1603 2SK1118 MOSFET 2SK1358 Transistor Guide transistor SMD 2S
Contextual Info: High Voltage MOSFETs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all possible designs.

2sk1603

Abstract: 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915
Contextual Info: Power MOS FET Type No. index Main Characteristics Type No. Series Nam e, Package Type Voss V 2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2SJ240 2SJ241 2SJ304 2SJ315 2SJ312 2SJ313 2SJ334 2SJ338 2SJ349 2SJ359 2SJ360 2SJ377 2SJ378

2SJ239

Abstract: 2SK2030 2SJ201Y 2sk1 2SK2057 2SK2200TP 2sk1544 2SJ201-Y 2SK1079 2SJ238
Contextual Info: MOSFET Characteristic Chart M axim u m R ating Id |Am ps| V oss [Volts] R d s ON Pd [W atts] TYP. [Ohm s| M AX. lO hm sI V qs [Volts] Id [Amps] Vtn (Volts] | ID - 1 mA] A p plicatio n DC/DC converter 2SJ147 T0-220(IS) -12 -60 40 0.17 0.2 -10 -6 -1.5 ~ -3.5