2SK2961 Search Results

K2961

Contextual Info: T O S H IB A 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-MOSV 2 S K2 9 61 HIGH SPEED SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATION • Low Drain-Source ON Resistance

transistor 1127

Abstract: transistor 2sk2961
Contextual Info: TOSHIBA 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-M O SV 2SK2961 HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER INDUSTRIAL APPLICATIONS Unit in mm 5.1 M AX. APPLICATION • • • • Low Drain-Source ON Resistance : RüS(ON) = 0.20 (Typ.)

K2961

Abstract: transistor k2961 2sK2961 equivalent 2SK2961
Contextual Info: 2SK2961 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application z Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)

K2961

Abstract: 2SK2961
Contextual Info: TO SHIBA 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2961 HIGH SPEED SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER 5.1 MAX. APPLICATION Low Drain-Source ON Resistance

K2961

Abstract: transistor k2961 k2961 Transistor
Contextual Info: 2SK2961 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application z Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)

2SK2961

Abstract: transistor 1127
Contextual Info: T O SH IB A 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-M O SV 2SK2961 HIGH SPEED SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATION Low Drain-Source ON Resistance : R nS (ON) —0.2H (Typ.)

K2961

Abstract: 2SK2961 DSA0017237 G1150
Contextual Info: 2SK2961 東芝電界効果トランジスタ 2 シリコンNチャネルMOS形 L −π−MOSⅤ 2SK2961 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : RDS (ON) = 0.2Ω (標準) z オン抵抗が低い。

2sK2961 equivalent

Abstract: 2sk2961
Contextual Info: 2SK2961 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.)

k2961

Abstract: transistor k2961 2sk2961 K296 k2961 Transistor transistor 2sk2961 2sK2961 equivalent
Contextual Info: 2SK2961 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.)

Contextual Info: 2SK2961 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.)

K2961

Abstract: 2SK2961
Contextual Info: TOSHIBA 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2961 HIGH SPEED SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER 5.1 MAX. APPLICATION Low Drain-Source ON Resistance

K2961

Abstract: transistor k2961 k2961 Transistor 2SK2961
Contextual Info: 2SK2961 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application z Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)

K2961

Abstract: 2SK2961
Contextual Info: 2SK2961 東芝電界効果トランジスタ 2 シリコンNチャネルMOS形 L −π−MOSⅤ 2SK2961 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : RDS (ON) = 0.2Ω (標準) z オン抵抗が低い。

2SK2961

Abstract: S 170 TRANSISTOR
Contextual Info: 2SK2961 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application l Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.) l High forward transfer admittance : |Yfs| = 2.0 S (typ.)

Contextual Info: TO SHIBA 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M05 TYPE L2- tt-M O$V ? <; \c i q 1 HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATION INDUSTRIAL APPLICATIONS Unit in mm 5.1 MAX. Low Drain-Source ON Resistance : Rüg (ON) —0.20 (Typ.)

k2961

Abstract: 2SK2961
Contextual Info: T O S H IB A 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2961 HIGH SPEED SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER 5.1 MAX. APPLICATION Low Drain-Source ON Resistance

5252 F 1009 4-pin

Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

2SK2056

Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1

2SK3567 equivalent

Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

2SK3878 equivalent

Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Contextual Info: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

2SK4207

Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3

TPCA*8064

Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
Contextual Info: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4