2SK349 Search Results

k3491

Abstract: K349 2SK3491 2SK349
Contextual Info: Ordering number : ENN6959 2SK3491 N-Channel Silicon MOSFET 2SK3491 Ultrahigh-Speed Switching Applications Features Low ON-resistance. Low Qg. unit : mm 2083B [2SK3491] 2.3 0.5 7.0 5.5 1.5 6.5 5.0 4 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 1 : Gate 2 : Drain 3 : Source

Contextual Info: Ordering num ber : ENN6970~j N-Channel Silicon MOSFET 2SK3495 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. u n it : mm • Ullrahigh-speed switching. 2087A • 4V drive. [2SK3495] • Meets radial taping. 2.5 1. 4 5 ,

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3494 N-channel enhancement mode MOSFET • Features Unit: mm 4.6±0.2 (1.4) 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 • For PDP • For high-speed switching 0.6±0.1 10.1±0.3

K349

Abstract: 2SK3499
Contextual Info: 2SK3499 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3499 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.0 S (typ.)

2SK3492

Abstract: D1306
Contextual Info: 2SK3492 注文コード No. N 8 2 7 9 三洋半導体データシート N 2SK3492 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。

toshiba marking code transistor

Abstract: K3497 2SK3497 toshiba 2-16c1b 2SJ618 Toshiba 2SJ
Contextual Info: 2SK3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3497 High Power Amplifier Application Unit: mm z High breakdown voltage: VDSS = 180V z Complementary to 2SJ618 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

2SK3492

Abstract: 70103PA
Contextual Info: 注文コード No. N 0 0 0 0 2SK3492 暫 定 規 格 No. N0000 70103 新 2SK3492 特長 N チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。

jeita sc-65

Abstract: K3497 2SK3497 2SJ618 SC-65
Contextual Info: 2SK3497 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV 2SK3497 ○ 低周波電力増幅用 単位: mm VDSS 180 V ゲ ー ト ・ ソ ー ス 間 電 圧 VGSS ±12 V 許 チ 保 注 1: 注 2: 容 DC (注 1) ID 10 A パルス

2sK3496

Abstract: 2SK3496-01MR
Contextual Info: 2SK3496-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply)

K349

Abstract: k3499 2SK3499
Contextual Info: 2SK3499 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3499 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: Yfs = 8.0 S (typ.)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3494 N-channel enhancement mode MOSFET • Features Unit: mm 4.6±0.2 (1.4) 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 M Di ain sc te on na tin nc ue e/ d • For PDP • For high-speed switching

2SK3490

Abstract: 2D2-10
Contextual Info: 2SK3490 Ordering number : EN9085 N-Channel Silicon MOSFET 2SK3490 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol

K3498

Abstract: K3498 Transistor 2SK3498 transistor k3498 k349
Contextual Info: 2SK3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) · High forward transfer admittance: |Yfs| = 0.6 S (typ.)

K3498

Abstract: 2SK3498 K3498 Transistor K349
Contextual Info: 2SK3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: Yfs = 0.6 S (typ.)

2SK3495

Contextual Info: Ordering number : ENN6970 2SK3495 N-Channel Silicon MOSFET 2SK3495 Ultrahigh-Speed Switching Applications Features • • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. Meets radial taping. unit : mm 2087A [2SK3495] 2.5

k3494

Abstract: 2SK3494
Contextual Info: Power MOSFETs 2SK3494 N-channel enhancement mode MOSFET • Features Unit: mm 4.6±0.2 1.4 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 • For PDP • For high-speed switching 0.6±0.1 10.1±0.3 1.4±0.1 1.4±0.1 2.5±0.2 0.8±0.1 2.54±0.3 0 to 0.3 ■ Absolute Maximum Ratings TC = 25°C

K3498

Abstract: K3498 Transistor
Contextual Info: 2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3498 DC/DC Converter, Relay Drive and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)

Contextual Info: 2SK3499 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3499 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.0 S (typ.)

2SK3492

Contextual Info: 2SK3492 SPICE PARAMETER Nch MOS FET model : BSIM3V3.2 Parameter Value LEVEL 8 3.2 VERSION VTH0 2.21 NLX 4.70E-07 DVT2 -0.01 UB 1.00E-21 AGS 0.72 1.22E+04 RDSW WINT 0.68 NFACTOR CDSCD PCLM 0.20 DROUT 0.96 PVAG 0.01 MOBMOD 1 CAPMOD 3 CGDO 1.40E-11 CGDL 2.80E-10

K3498

Abstract: K3498 Transistor 2SK3498
Contextual Info: 2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3498 DC/DC Converter, Relay Drive and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)

2SK3499

Abstract: K349
Contextual Info: 2SK3499 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3499 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.0 S (typ.)

K3498

Abstract: K3498 Transistor transistor k3498 2SK3498 K349
Contextual Info: 2SK3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)

k3498

Abstract: 2SK3498 K3498 Transistor
Contextual Info: 2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3498 DC/DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)

2sk350 hitachi

Abstract: 2SK350 2SK349 KDS -5a
Contextual Info: 2SK349.2SK350 yU=3> S IL IC O N N -C H A N N E L M OS FET S FET HIGH SPEED POW ER S W IT C H IN G 5.0max. 1.5 1. Y 2. y i " y : D ra in — I- ! G a te (~7 7 y v 3. V — * (F la n g e ) • So u rce (D im e n s io n s in mm) (T O -3P ) ABSOLUTE MAXIMUM RATINGS (Ta= 25'C)