K349 Search Results

on line ups circuit diagrams

Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
Contextual Info: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm

k3491

Abstract: K349 2SK3491 2SK349
Contextual Info: Ordering number : ENN6959 K3491 N-Channel Silicon MOSFET K3491 Ultrahigh-Speed Switching Applications Features Low ON-resistance. Low Qg. unit : mm 2083B [K3491] 2.3 0.5 7.0 5.5 1.5 6.5 5.0 4 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 1 : Gate 2 : Drain 3 : Source

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs K3494 N-channel enhancement mode MOSFET • Features Unit: mm 4.6±0.2 (1.4) 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 • For PDP • For high-speed switching 0.6±0.1 10.1±0.3

K3496

Abstract: K3436 K3498 K3638 K3492 K2746 MK Socket MK Socket outlet K2977 K3431
Contextual Info: Part M Product Guide Part M Product Guide An introduction to Part M of the Building Regulations: Part USE OF BUILDINGS. It is estimated that 8.6 million people in the UK a assist with the facilities for people with disabilities, the Office of the Depu Building Regulations 2000 have issued Part M, which covers the ent

K349

Abstract: 2SK3499
Contextual Info: K3499 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3499 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.0 S (typ.)

toshiba marking code transistor

Abstract: K3497 2SK3497 toshiba 2-16c1b 2SJ618 Toshiba 2SJ
Contextual Info: K3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV K3497 High Power Amplifier Application Unit: mm z High breakdown voltage: VDSS = 180V z Complementary to 2SJ618 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

jeita sc-65

Abstract: K3497 2SK3497 2SJ618 SC-65
Contextual Info: K3497 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV K3497 ○ 低周波電力増幅用 単位: mm VDSS 180 V ゲ ー ト ・ ソ ー ス 間 電 圧 VGSS ±12 V 許 チ 保 注 1: 注 2: 容 DC (注 1) ID 10 A パルス

K349

Abstract: k3491 maxtor
Contextual Info: _i_ T h l i d D M in c n t ! • R i b p ro p e rt y eO A rn p h trm l C o r p o r a t o r ! oriti Is d s l l r o d « n g o n d i t e l i th flT H l i n o i t o b * d ls o lo m d i r v p r o f lw o d * r u m L In vtw>la : ln iR^ _1 f o r m D n u fiE + u fH n r i o b b y a n y( a n a i

K349

Abstract: k3499 2SK3499
Contextual Info: K3499 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3499 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: Yfs = 8.0 S (typ.)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs K3494 N-channel enhancement mode MOSFET • Features Unit: mm 4.6±0.2 (1.4) 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 M Di ain sc te on na tin nc ue e/ d • For PDP • For high-speed switching

K3498

Abstract: K3498 Transistor 2SK3498 transistor k3498 k349
Contextual Info: K3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) · High forward transfer admittance: |Yfs| = 0.6 S (typ.)

K3498

Abstract: 2SK3498 K3498 Transistor K349
Contextual Info: K3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: Yfs = 0.6 S (typ.)

2SK3497

Abstract: k3497 2SJ618 SC-65 K349
Contextual Info: K3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV K3497 High Power Amplifier Application Unit: mm 2.0 20.5 ± 0.5 9.0 2.0 ± 0.3 1.0 ＋0.3 －0.25 Rating Unit Drain−source voltage VDSS 180 V Gate−source voltage VGSS ±12

k3494

Abstract: 2SK3494
Contextual Info: Power MOSFETs K3494 N-channel enhancement mode MOSFET • Features Unit: mm 4.6±0.2 1.4 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 • For PDP • For high-speed switching 0.6±0.1 10.1±0.3 1.4±0.1 1.4±0.1 2.5±0.2 0.8±0.1 2.54±0.3 0 to 0.3 ■ Absolute Maximum Ratings TC = 25°C

Contextual Info: K3499 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3499 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.0 S (typ.)

K3498

Abstract: K3498 Transistor 2SK3498
Contextual Info: K3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV K3498 DC/DC Converter, Relay Drive and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)

2SK3499

Abstract: K349
Contextual Info: K3499 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3499 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.0 S (typ.)

K3498

Abstract: K3498 Transistor transistor k3498 2SK3498 K349
Contextual Info: K3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)

k3498

Abstract: 2SK3498 K3498 Transistor
Contextual Info: K3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV K3498 DC/DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)

K3498

Abstract: K3498 Transistor 2SK3498 K349
Contextual Info: K3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV K3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 4.2 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)

K349

Abstract: k3494 2SK3494 2SK34
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs K3494 N-channel enhancement mode MOSFET • Features Unit: mm • Low on-resistance, low Qg • High avalanche resistance 4.6±0.2 1.4±0.1 1.4±0.1 2.5±0.2 0.8±0.1 2.54±0.3

K3498

Abstract: 2SK3498
Contextual Info: K3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)

k3497

Abstract: 2SK3497 2SJ618 toshiba marking code transistor toshiba 2-16c1b Toshiba 2SJ K349
Contextual Info: K3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV K3497 High Power Amplifier Application Unit: mm High breakdown voltage: VDSS = 180V Complementary to 2SJ618 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage

LV200

Abstract: LC66E408 DC42S 27128 EPROM specification INTEL 27128 42-pin intel 27128 eprom AWP42
Contextual Info: Ordering number: EN ¿K3493 CMOS LSI LC66E408 4-bit Microcontroller with Built-in EPROM Preliminary " • ■ v . . OVERVIEW / / / PINOUTS The LC66E408 is a 4-bit microcontroller with a built-in 8 Kbyte EPROM. It is compatible with the LC6640X series mask ROM devices, making it ideal for program