K3497 Search Results

K3497 Price and Stock

Filter by Manufacturer

Select Manufacturer


Vishay Intertechnologies CRCW0402442KFKED Thick Film Resistors - SMD 1/10 Watt 442Kohms 1%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	CRCW0402442KFKED	Reel	790,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.00	Buy Now
Molex 0351510214 Headers & Wire Housings VersaBlade Hybrid Plug Housing, 2 Pos., Positive Lock, Blue
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	0351510214	Bulk	16,550		50	1 - 10 - 100 $0.15 1000 $0.14 10000 $0.13	Buy Now
Amphenol Corporation D38999/26MD19PN Circular MIL Spec Connector 19P PLG SZ 15 PIN CBL MNT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	D38999/26MD19PN	Each	104		1	1 $90.00 10 $90.00 100 $75.00 1000 $66.67 10000 $58.82	Buy Now
YAGEO Corporation AC0603FR-0739KL Thick Film Resistors - SMD 39 kOhms 1/10 W 75 V 1% 0603 100 PPM / C - 55 C / + 155 C AEC-Q200
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	AC0603FR-0739KL	Reel			5,000	1 - 10 - 100 - 1000 - 10000 $0.00	Buy Now
YAGEO Corporation RC0805JR-07200KL Thick Film Resistors - SMD General Purpose Chip Resistor 0805, 200kOhms, 5%, 1/8W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	RC0805JR-07200KL	Reel			5,000	1 - 10 - 100 - 1000 - 10000 $0.00	Buy Now

Find more K3497 price and stock on Findchips.com

K3497 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
toshiba marking code transistor Abstract: K3497 2SK3497 toshiba 2-16c1b 2SJ618 Toshiba 2SJ Contextual Info: K3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV K3497 High Power Amplifier Application Unit: mm z High breakdown voltage: VDSS = 180V z Complementary to 2SJ618 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating	Original	2sk3497 2sj618 toshiba marking code transistor k3497 +2toshiba 2-16c1b toshiba 2sj	PDF
jeita sc-65 Abstract: K3497 2SK3497 2SJ618 SC-65 Contextual Info: K3497 東芝電界効果トランジスタシリコンNチャネルMOS形 π-MOSV K3497 ○ 低周波電力増幅用単位: mm VDSS 180 V ゲート・ソース間電圧 VGSS ±12 V 許チ保注 1: 注 2: 容 DC (注 1) ID 10 A パルス	Original	2sk3497 2sj618 sc-65 2-16c1b +320070701-ja jeita sc-65 k3497	PDF
2SK3497 Abstract: k3497 2SJ618 SC-65 K349 Contextual Info: K3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV K3497 High Power Amplifier Application Unit: mm 2.0 20.5 ± 0.5 9.0 2.0 ± 0.3 1.0 ＋0.3 －0.25 Rating Unit Drain−source voltage VDSS 180 V Gate−source voltage VGSS ±12	Original	2sk3497 2sj618 k3497 sc-65 +1k349	PDF
k3497 Abstract: 2SK3497 2SJ618 toshiba marking code transistor toshiba 2-16c1b Toshiba 2SJ K349 Contextual Info: K3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV K3497 High Power Amplifier Application Unit: mm High breakdown voltage: VDSS = 180V Complementary to 2SJ618 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage	Original	2sk3497 2sj618 k3497 toshiba marking code transistor +3toshiba 2-16c1b toshiba 2sj k349	PDF
k3497 Abstract: K349 2SK3497 2SJ618 Toshiba 2SJ Contextual Info: K3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV K3497 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V Complementary to 2SJ618 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage	Original	2sk3497 2sj618 k3497 k349 +1toshiba 2sj	PDF
Toshiba 2SJ Abstract: toshiba marking code transistor Contextual Info: K3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV K3497 High Power Amplifier Application Unit: mm z High breakdown voltage: VDSS = 180V z Complementary to 2SJ618 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating	Original	2sk3497 2sj618 2-16c1b toshiba 2sj +1toshiba marking code transistor	PDF