2SK34 Search Results

K3407

Contextual Info: 2SK3407 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3407 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.5 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)

2SK3467

Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3467 TO-263 +0.1 1.27-0.1 Features 4.5 V drive available Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 55 nC TYP. ID = 80 A, VDD = 16 V, VGS = 10 V Built-in gate protection diode

2SJ102

Abstract: K346 K3465 2SK345 2SJ101 2SK346 K346 fet
Contextual Info: H IT A C H I ! /-co PT O E L E C T R O N I C S } 7 3 D — -^ W 2 T T 5 ^ m rra U H I / OP'IO LLhCTRUNlUü; e 73C J ^ H L E D S m 10017 a D 2SK345,2SK346 S ILIC O N N -C H A N N E L M O S FET HIGH SPEED POWER SW ITCHING. LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ101, 2SJ102

Contextual Info: 2SK3476 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3476 VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These

SMD 20A

Abstract: 2SK3404
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3404 TO-263 +0.1 1.27-0.1 Features 4.5-V drive available Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 25 nC TYP. ID = 40 A, VDD = 24 V, VGS = 10 V Built-in gate protection diode

smd transistor 6-100

Abstract: 2SK3431
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3431 +0.1 1.27-0.1 TO-263 MAX. VGS = 10 V, ID = 42 A RDS(on)2 = 8.9 m MAX. (VGS = 4 V, ID = 42 A) +0.2 4.57-0.2 5.60 RDS(on)1 = 5.6m +0.2 8.7-0.2 Super low on-state resistance: +0.1 1.27-0.1 +0.2 15.25-0.2 Features

2SK3438

Contextual Info: 2SK3438 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV 2SK3438 ○ DC-DC コンバータ用 ○ スイッチングレギュレータ用 単位: mm • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 4.5 S (標準)

2SK3453

Contextual Info: 2SK3453 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSIV 2SK3453 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 0.72 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。: |Yfs| = 7.0 S (標準)

2SK3404

Abstract: 2SK3404-Z MP-25 MP-25Z M2SK3404
Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK3404 N チャネル パワーMOS FET スイッチング用 工業用 2SK3404 は，N チャネル MOS FET でオン抵抗が低く，スイッチング特性が優れており，同期整流方式 DC/DC コンバー

2SK3444

Abstract: K3444
Contextual Info: 2SK3444 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3444 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 65 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.)

K3473

Abstract: TOSHIBA K3473 transistor k3473 toshiba transistor k3473 K347 2SK3473 SC-65
Contextual Info: 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)

Contextual Info: 2SK3444 T O S H IB A TOSHIBA FSELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE { *-M Q S V 2S K3444 TENTATIVE IN D U S T R IA L HIGH SPEGO SWITCHING APPLICATIONS A P P L IC A T IO N S _UNIT : rrm CHOPPER REGULATION DC-DC CONVERTER AND MOTOR DRIVE APPLICATI OHS

RL76

Abstract: 2SK3485 2SK34
Contextual Info: 2SK3485 Ordering number : EN7180A 2SK3485 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage

k3472

Abstract: 2SK3472
Contextual Info: 2SK3472 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3472 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)

M2SK3424

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3424 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE • DESCRIPTION ORDERING INFORMATION The 2SK3424 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as

2SK3404 equivalent

Abstract: 2SK3404 2SK3404-ZK 2SK3404-ZJ MP-25
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3404 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3404 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as

MP-25

Abstract: MP-25Z 2SK3431 2SK3431-S 2SK3431-Z 2SK3431-ZJ
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3431 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3431 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3431 TO-220AB 2SK3431-S

Contextual Info: Ordering number : ENN7180 2SK3485 N-Channel Silicon MOSFET 2SK3485 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2062A [2SK3485] 4.5 1.6 0.4 1.0

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3454 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3454 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, PART NUMBER

2sk3469

Abstract: 2SK3469-01MR *k3469
Contextual Info: 2SK3469-01MR Super FAP-G Series FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

D1459

Abstract: 2sk3430 equivalent 2SK3430-Z 2SK3430 2SK3430-S MP-25 MP-25Z in 3003 TRANSISTOR
Contextual Info: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3430 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3430 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3430 TO-220AB 2SK3430-S TO-262 2SK3430-Z

MOSFET TOSHIBA 2015

Contextual Info: TOSHIBA Discrete Devices RF Power MOSFET 2SK3476 Application Note Contens Contens ・・Bias Bias Current Current // DC DC Characteristics Characteristics Vds Vds = 4.8V, 4.8V, 6.0V, 6.0V, 7.2V, 7.2V, 8.4V, 8.4V, 9.6V 9.6V Vgs = 0.5V ~ 2.2V 0.05V Step

k3491

Abstract: K349 2SK3491 2SK349
Contextual Info: Ordering number : ENN6959 2SK3491 N-Channel Silicon MOSFET 2SK3491 Ultrahigh-Speed Switching Applications Features Low ON-resistance. Low Qg. unit : mm 2083B [2SK3491] 2.3 0.5 7.0 5.5 1.5 6.5 5.0 4 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 1 : Gate 2 : Drain 3 : Source

Contextual Info: Ordering num ber : ENN6970~j N-Channel Silicon MOSFET 2SK3495 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. u n it : mm • Ullrahigh-speed switching. 2087A • 4V drive. [2SK3495] • Meets radial taping. 2.5 1. 4 5 ,