K346 Search Results

AN 17820 IC

Abstract: an 17828 an 17827 AN 17821 A k3460 AN 17821 17815
Contextual Info: Single Phase Bridges Part Number X34100B1N1-S X34120B1B1 X34120B1B1-S X34120B1N1 X34120B1N1-S X34160B1B1 X34160B1B1-S X34160B1N1 X34160B1N1-S K3420B1EB1 K3420C1EB1 K3440B1EB1 K3440C1EB1 K3460B1EB1 K3460C1EB1 K3480B1EB1 K3480C1EB1 K34100B1EB1 K34100C1EB1 K34120B1EB1

Contextual Info: K3462 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3462 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • • Unit: mm 4-V gate drive Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.)

2SK3466

Abstract: k3466
Contextual Info: K3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3466 Chopper Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 500 V)

Contextual Info: K3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSV K3466 Chopper Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)

k3462

Contextual Info: K3462 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3462 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • • Unit: mm 4 V Gate drive Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.)

Contextual Info: K3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3466 Chopper Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)

k3462

Contextual Info: K3462 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV K3462 Switching Regulator, DC/DC Converter and Motor Drive Applications Unit Drain-source voltage VDSS 250 V Drain-gate voltage (RGS = 20 kΩ) VDGR 250 V Gate-source voltage VGSS

2SK3466

Contextual Info: K3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3466 Chopper Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)

K346

Contextual Info: K3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3466 Chopper Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)

2SK3466

Contextual Info: K3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3466 Chopper Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)

2SK3462

Abstract: K3462
Contextual Info: K3462 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV K3462 Switching Regulator, DC/DC Converter and Motor Drive Applications • • • • • Unit: mm 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.)

2SK3466

Contextual Info: K3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3466 Chopper Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)

2SK3466

Abstract: transistor MJ 122
Contextual Info: K3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3466 Chopper Regulator • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) · High forward transfer admittance: ïYfsï = 4.0 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 500 V)

Contextual Info: Data sheet. VSPC 1CL PW 24V EX Weidmüller Interface GmbH & Co. KG Klingenbergstraße 16 D-32758 Detmold Germany Fon: +49 5231 14-0 Fax: +49 5231 14-292083 www.weidmueller.com Analogue signal / CL current loop protection includes the following signals:

Contextual Info: VMO 550-01F VDSS Id25 HiPerFET MOSFET Module ^ D S o n = 100V “ 590 A “ 2 .1 m O N-Channel Enhancement Mode Preliminary Data (pS Maximum Ratings Symbol Test Conditions vv DSS Td = 25°C to 150°C 100 V v DGR Td = 25°C to 150°C; RGS = 10 kß 100

tc 122 25 5

Abstract: 2SK3466
Contextual Info: K3466 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV K3466 ○ チョッパレギュレータ用 • 単位: mm : RDS (ON) = 1.35 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 4.0 S (標準)

k3462

Abstract: 2SK3462 K346
Contextual Info: K3462 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV K3462 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 5.2 ± 0. 2 • 4 V 駆動です。 • オン抵抗が低い。

Contextual Info: K3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3466 Chopper Regulator • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: Yfs = 4.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 500 V)

k3462

Abstract: 2Sk3462
Contextual Info: K3462 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV K3462 Switching Regulator, DC/DC Converter and Motor Drive Applications Unit Drain-source voltage VDSS 250 V Drain-gate voltage (RGS = 20 kΩ) VDGR 250 V Gate-source voltage VGSS

SK3858

Abstract: SK3854 SK3466 SK3747 SK3836 SK3718 SK3839 SK3861 SK3859 SK3722
Contextual Info: THOriSON/ D I S T R I B U T O R SflE D ÏI] com. BIPOLAR TRANSISTORS • T05bfl?3 0 0 0 4 5 5 3 3fc.S ■ TCSK Maximum Ratings TCE Type Device Polarity & Material Breakdown Voltages Application ‘complementary device type SK3715 PNP/Si *SK3275 AF Driver & Output Stage, FM Brdcst Band

K3462

Abstract: 2SK3462
Contextual Info: K3462 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3462 Switching Regulator, DC-DC Converter and Motor Drive Applications • · · · · Unit: mm 4 V Gate drive Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.)

k3462

Abstract: 2SK3462
Contextual Info: K3462 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV K3462 Switching Regulator, DC/DC Converter and Motor Drive Applications • • • • • Unit: mm 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.)

220v AC voltage stabilizer schematic diagram

Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122

Contextual Info: K3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3466 Chopper Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 500 V)