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    HM2DK3478PLF
    Amphenol Communications Solutions Millipacs Accessories Discrimination Key having colour STEEL BLUE,PLUG MODULE and ROHS COMPLIANT PDF
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    YAGEO Corporation ERK610RK3470MCRA

    Capacitor: ceramic; 470pF; 440VAC; 7.5mm; Leads: radial; 8x6mm
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    TME ERK610RK3470MCRA 19,500 341
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    Gossen Metrawatt K347A

    Laboratory power supply: programmable; single-channel; 0÷60VDC
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    TME K347A 1
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    KEMET Corporation A50IK34700860K

    0,47 U 50 VV - Boxed Product (Development Kits) (Alt: A50IK34700860K)
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    Avnet Americas A50IK34700860K Box 21 Weeks 5,000
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    KEMET Corporation A50IK34702660M

    0,47 U 50 VV - Tape and Reel (Alt: A50IK34702660M)
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    KEMET Corporation A50IK3470AA60K

    General Purpose Film Capacitor, Metallized Polyester, 0.47 uF, ? 10%, 160 V, 250 V, Through Hole - Boxed Product (Development Kits) (Alt: A50IK3470AA60K)
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    Avnet Americas A50IK3470AA60K Box 21 Weeks 5,000
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    K347 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K3473

    Abstract: TOSHIBA K3473 transistor k3473 toshiba transistor k3473 K347 2SK3473 SC-65
    Contextual Info: K3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


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    2sk3473k3473toshiba k3473transistor k3473+3toshiba transistor k3473k347sc-65 PDF

    k3472

    Abstract: 2SK3472
    Contextual Info: K3472 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3472 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


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    2sk3472k3472 PDF

    k3472

    Abstract: 2SK3472 MJ103
    Contextual Info: K3472 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V K3472 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


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    2sk3472k3472mj103 PDF

    SK3466

    Abstract: SK3559 SK3444 SK3441 SK3528 SK3710 SK3452 sk3444 transistors SK3467 SK3642
    Contextual Info: TH OM S O N / D I S T R I B U T O R I B IPO LAR TRANSISTORS 5ÖE D • = 1 0 ^ 0 7 3 Q004flPl 5T5 ■ TCSK com. Maximum Ratings K E Type Device Polarity & Material Breakdown Voltages Application 'complementary device type SK3441 Device Power Dissipata Collector


    OCR Scan
    sk3441sk3440sk3444sk10272+12sk3449sk3450sk34s2amt-040sk3466sk3559sk3528sk3710sk3452sk3444 transistorssk3467sk3642 PDF

    transistor m1104

    Abstract: transistor k2333 k3332 G5684 K2040 k3561 k3562 k2333 M5223 k2182
    Contextual Info: Contents List of Ordering Codes 5 8 Multilayer Chip Capacitors 11 Multilayer Leaded Capacitors 57 General Technical Information Mounting Instructions for Chip Capacitors 75 88 Measuring and Test Conditions Quality Assurance 99 103 Taping and Packing 111 Symbols and Terms


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    filt05transistor m1104transistor k2333k3332+7g5684k2040k3561k3562k2333m5223k2182 PDF

    transistor k2333

    Abstract: k3332 k2333 K3561 transistor k2182 K2182 k3562 k3272 transistor k1102 k0392
    Contextual Info: Multilayer Chip Capacitors X7R/B Characteristic Features ● ● ● ● l High volumetric efficiency Non-linear capacitance change High insulation resistance High pulse strength b s Applications ● ● ● ● Blocking Coupling Decoupling Interference suppression


    Original
    kke0272-v30-k5273-k01-k5333-k01-k5393-k01+13-k5473-k01b37931-k0472-k01c/c25transistor k2333k3332k2333k3561transistor k2182k2182k3562k3272transistor k1102k0392 PDF

    TOSHIBA K3473

    Abstract: k3473 2SK3473 K347 SC-65
    Contextual Info: K3473 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV K3473 スイッチングレギュレータDC−DC コンバータ用 モータドライブ用 単位: mm : RDS (ON) = 1.3Ω (標準) オン抵抗が低い。 : |Yfs| = 6.5S (標準)


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    2sk3473sc-652-16c1b20070701-ja+3toshiba k3473k3473k347 PDF

    Contextual Info: K3472 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3472 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original
    2sk3472to150 PDF

    Contextual Info: K3472 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3472 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original
    2sk3472to150 PDF

    Contextual Info: K3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV K3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


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    2sk3473 PDF

    K3472

    Abstract: 2SK3472
    Contextual Info: K3472 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V K3472 Switching Regulator Applications Unit: mm High forward transfer admittance: |Yfs| = 0.8 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)


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    2sk3472k3472 PDF

    TOSHIBA K3473

    Abstract: toshiba transistor k3473 transistor k3473 K3473
    Contextual Info: K3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)


    Original
    2sk3473toshiba k3473toshiba transistor k3473transistor k3473+1k3473 PDF

    k3473

    Abstract: TOSHIBA K3473 transistor k3473 2SK3473 SC-65
    Contextual Info: K3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original
    2sk3473k3473toshiba k3473transistor k3473+1sc-65 PDF

    K3472

    Abstract: 2SK3472
    Contextual Info: K3472 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3472 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) · High forward transfer admittance: |Yfs| = 0.8 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


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    2sk3472k3472 PDF

    K1047

    Abstract: NTCS0603E3 SS0805 C3964 5x222 NTCS0402E3223 103 ntc K347
    Contextual Info: V i s hay I n t e r t echn o l o g y, I nc . NTHS a nd NTCS Se r ie s Key Benefits • Nickel/tin and tin/lead terminations available • Wraparound terminations • Allows design flexibility for use with hybrid circuitry • High-density monolithic construction


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    vmn-pt9103-1008k1047ntcs0603e3ss0805+5c39645x222ntcs0402e3223103 ntck347 PDF

    PCS17 SHARP

    Abstract: PCS17 SHARP pcs17 PC817 VDE PC847 sharp PC317 EK24 PC-847 PC317 k347a
    Contextual Info: SPEC DATE: PREPAREDBY: sw ,qlta-id ll.wudr4, r’w DATE: APPROVED By: 7. pL EIAEmRoNIc COMPONENTS GROUP SHARP CORPORATION A+p~T DEVICE SPECXFICATION ED-92013A ISSUE August PAW l~paga. FtEPFUC3ENTATIVE DIVISION DEXICES DIV. FOR _.- gwfnwsdealing.e-‘-.:.


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    ed-92013apcs17pc317pcs47yl+9cy6173ko2pcs17 sharpsharp pcs17pc817 vdepc847sharp pc317ek24pc-847k347a PDF

    K3473

    Abstract: TOSHIBA K3473 toshiba transistor k3473 2SK3473 SC-65 transistor k3473
    Contextual Info: K3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original
    2sk3473k3473toshiba k3473toshiba transistor k3473+2sc-65transistor k3473 PDF

    2SK3472

    Abstract: K3472
    Contextual Info: K3472 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V K3472 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 0.8 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 450 V)


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    2sk3472k3472 PDF

    k3473

    Abstract: K347 TOSHIBA K3473 2SK3473 SC-65 2SK347 transistor k3473
    Contextual Info: K3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)


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    2sk3473150lledk3473k347+4toshiba k3473sc-652sk347transistor k3473 PDF

    k3332

    Abstract: k3562 k3102 k2333 k1271 k3272 K1124 K2182 k3561 K1153
    Contextual Info: Multilayer Chip Capacitors X7R Features • ■ ■ ■ High volumetric efficiency Non-linear capacitance change High insulation resistance High pulse strength Applications ■ ■ ■ ■ Blocking Coupling Decoupling Interference suppression Terminations


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    k3332k3562k3102k2333+6k1271k3272k1124k2182k3561k1153 PDF

    K3472

    Abstract: 2SK3472
    Contextual Info: K3472 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSV K3472 単位: mm ○ スイッチングレギュレータ用 1.7 ± 0. 2 6.8 MAX. 5.2 ± 0. 2 • 順方向伝達アドミタンスが高い。 : |Yfs| = 0.8 S (標準)


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    2sk3472k3472 PDF

    K3473

    Abstract: TOSHIBA K3473 2SK3473
    Contextual Info: K3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


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    2sk3473k3473toshiba k3473 PDF

    K3472

    Abstract: 2SK3472
    Contextual Info: K3472 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSV K3472 単位: mm ○ スイッチングレギュレータ用 1.5 ± 0. 2 6.5 ± 0.2 5.2 ± 0.2 取り扱いが簡単なエンハンスメントタイプです。 : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)


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    2sk3472k3472 PDF

    transistor k2333

    Abstract: k2333 k3562 k3332 transistor k2182 k2182 k3272 K3561 transistor k1102 K0392
    Contextual Info: Multilayer Chip Capacitors X7R/B Characteristic Features ● ● ● ● l High volumetric efficiency Non-linear capacitance change High insulation resistance High pulse strength b s Applications ● ● ● ● Blocking Coupling Decoupling Interference suppression


    Original
    kke0272-vb37872-k0224-k62b37931b37931-k5221-k60+16b37931-k5331-k60b37931-k5471-k60b37931-k5681-k60b37931-k5102-k60b37931-k5152-k60b37931-k5222-k60transistor k2333k2333k3562k3332transistor k2182k2182k3272k3561transistor k1102k0392 PDF