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Eaton Corporation EFDKA90K356E184DHT Film Capacitors CAP EFDKA-T 900VDC 35uF K 4LEADS 125C
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Mouser Electronics	EFDKA90K356E184DHT					1 - 10 - 100 $9.35 1000 $9.35 10000 $9.35	Get Quote
Eaton Corporation EFDKA45K356E114BHT Film Capacitors CAP EFDKA-T 450VDC 35uF K 4LEADS 125C
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Mouser Electronics	EFDKA45K356E114BHT					1 - 10 - 100 - 1000 $5.25 10000 $5.24	Get Quote
Fluke Calibration FLK-3561/3502 FC 3YR VIBRATION SENSOR 3YR STARTER KIT W/SW
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RS	FLK-3561/3502 FC 3YR	Bulk			1	1 $2092.00 10 $2092.00 100 $2092.00 1000 $2092.00 10000 $2092.00	Get Quote
Fluke Calibration FLK-3561 FC 3YR (5012657) VIBRATION SENSOR 3YR EXPANSION KIT W/SW
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RS	FLK-3561 FC 3YR (5012657)	Bulk			1	1 $1956.00 10 $1956.00 100 $1956.00 1000 $1956.00 10000 $1956.00	Get Quote
Fluke Calibration FLK-3561 FC KIT (4978160) VIBRATION SENSOR EXPANSION KIT W/SW
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	FLK-3561 FC KIT (4978160)	Bulk			1	1 $1163.89 10 $1163.89 100 $1163.89 1000 $1163.89 10000 $1163.89	Get Quote

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K3561 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
k3561 Abstract: 2SK3561 K356 Contextual Info: K3561 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSVI K3561 ○ スイッチングレギュレータ用単位: mm : RDS (ON) = 0.75 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 6.5 S (標準)	Original	2sk3561 sc-67 2-10u1b k3561 +1k356	PDF
K3561 Abstract: transistor k3561 k3561 transistor k3561 Silicon N Channel MOS Type 2SK3561 equivalent 2SK3561 2sk3561 datasheet K356 Contextual Info: TENTATIVE K3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅥ K3561 unit：ｍｍ Switching Regulator Applications 10±0.3 Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage	Original	2sk3561 k3561 transistor k3561 k3561 transistor +4k3561 silicon n channel mos type 2sk3561 equivalent 2sk3561 datasheet k356	PDF
transistor m1104 Abstract: transistor k2333 k3332 G5684 K2040 k3561 k3562 k2333 M5223 k2182 Contextual Info: Contents List of Ordering Codes 5 8 Multilayer Chip Capacitors 11 Multilayer Leaded Capacitors 57 General Technical Information Mounting Instructions for Chip Capacitors 75 88 Measuring and Test Conditions Quality Assurance 99 103 Taping and Packing 111 Symbols and Terms	Original	filt05 transistor m1104 transistor k2333 k3332 +7g5684 k2040 k3561 k3562 k2333 m5223 k2182	PDF
K3561 Abstract: transistor k3561 k3561 transistor k3561 transistor application 2sk3561 Contextual Info: K3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)	Original	2sk3561 k3561 transistor k3561 k3561 transistor +1k3561 transistor application	PDF
transistor k2333 Abstract: k3332 k2333 K3561 transistor k2182 K2182 k3562 k3272 transistor k1102 k0392 Contextual Info: Multilayer Chip Capacitors X7R/B Characteristic Features ● ● ● ● l High volumetric efficiency Non-linear capacitance change High insulation resistance High pulse strength b s Applications ● ● ● ● Blocking Coupling Decoupling Interference suppression	Original	kke0272-v 30-k5273-k01 -k5333-k01 -k5393-k01 +13-k5473-k01 b37931-k0472-k01 c/c25 transistor k2333 k3332 k2333 k3561 transistor k2182 k2182 k3562 k3272 transistor k1102 k0392	PDF
Contextual Info: K3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)	Original	2sk3561	PDF
G1966M SAW FILTER Abstract: K9253M G1966M G1968M K3561M K9260M K2977M M1859M K2958M K6272K Contextual Info: SAW DEVICE SELECTION TABLE for Multimedia Applications TV, CATV, VCR, DVB, DAB, SAT Content IF Filters for Intercarrier Applications IF Filters for Quasi/Split Sound Applications IF Filters for Video Applications IF Filters for Audio Applications Bandpass Filters for Digital Cable Applications	Original	k2953m k2958m k2959m k2963m +9g1966m saw filter k9253m g1966m g1968m k3561m k9260m k2977m m1859m k6272k	PDF
K3561 Abstract: transistor k3561 2sk3561 2SK3561 equivalent 40VDS k3561 transistor k3561 Silicon N Channel MOS Type Contextual Info: K3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)	Original	2sk3561 k3561 transistor k3561 2sk3561 equivalent +340vds k3561 transistor k3561 silicon n channel mos type	PDF
k3332 Abstract: k3562 k3102 k2333 k1271 k3272 K1124 K2182 k3561 K1153 Contextual Info: Multilayer Chip Capacitors X7R Features • ■ ■ ■ High volumetric efficiency Non-linear capacitance change High insulation resistance High pulse strength Applications ■ ■ ■ ■ Blocking Coupling Decoupling Interference suppression Terminations	Original	k3332 k3562 k3102 k2333 +6k1271 k3272 k1124 k2182 k3561 k1153	PDF
23z9 tube Abstract: k3561 23z9 triode FU 50 k356 ScansU9X24 Contextual Info: — PRODUCT INFORMATION — TUBES Page 1 Compactron Dissimilar-Double-Triode Pentode VERTICAL OSCILLATOR 140 VOLTS B+ VERTICAL OUTPUT PENTODE SYNC CLIPPER The 23Z9 is a compactron containing a medium-mu triode, a high-mu triode, and a highperveance beam pentode. The pentode is intended for vertical output service in monochrome	OCR Scan	k-55611-td24d-2 23z9 tube k3561 23z9 +3triode fu 50 k356 scansu9x24	PDF
K3561 Abstract: transistor compatible k3561 transistor k3561 k3561 transistor 2SK3561 equivalent k356 2SK3561 k3561 Silicon N Channel MOS Type k3561 transistor application Contextual Info: K3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.5 S (typ.)	Original	2sk3561 k3561 transistor compatible k3561 transistor k3561 +5k3561 transistor 2sk3561 equivalent k356 k3561 silicon n channel mos type k3561 transistor application	PDF
K3561 Abstract: transistor k3561 2SK3561 2SK3561 equivalent k3561 Silicon N Channel MOS Type k3561 transistor 2sk3561 datasheet Contextual Info: K3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.5S (typ.)	Original	2sk3561 k3561 transistor k3561 2sk3561 equivalent +3k3561 silicon n channel mos type k3561 transistor 2sk3561 datasheet	PDF
K3561 Abstract: transistor k3561 2SK3561 k3561 transistor k356 k3561 transistor application K3561 data transistor 2sK3561 Contextual Info: K3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)	Original	2sk3561 k3561 transistor k3561 k3561 transistor +4k356 k3561 transistor application k3561 data transistor 2sk3561	PDF
transistor k2333 Abstract: k2333 k3562 k3332 transistor k2182 k2182 k3272 K3561 transistor k1102 K0392 Contextual Info: Multilayer Chip Capacitors X7R/B Characteristic Features ● ● ● ● l High volumetric efficiency Non-linear capacitance change High insulation resistance High pulse strength b s Applications ● ● ● ● Blocking Coupling Decoupling Interference suppression	Original	kke0272-v b37872-k0224-k62 b37931 b37931-k5221-k60 +16b37931-k5331-k60 b37931-k5471-k60 b37931-k5681-k60 b37931-k5102-k60 b37931-k5152-k60 b37931-k5222-k60 transistor k2333 k2333 k3562 k3332 transistor k2182 k2182 k3272 k3561 transistor k1102 k0392	PDF