K356 Search Results

K3530

Abstract: 4 CONDUCTOR 3.5mm jack k3505 K3502 3.5mm phone jack k3591 k3515 K3534 k356 k357
Contextual Info: Phone Jack K3500 K356 2.5mm MONO JACK 2-CONDUCTOR OPEN CIRCUIT 1/4" PHONE JACK K35001 2.5mm STEREO JACK K3501 K357 2.5mm MONO JACK W/CABLE PROTECTOR 2-CONDUCTOR CLOSED CIRCUIT 1/4" PHONE JACK K3502 2.5mm STEREO JACK W/CABLE PROTECTOR K3503 K358 3.5mm MONO JACK

K3565M

Abstract: k3565 B39389-K3565-M201
Contextual Info: SAW multimedia filters Series/Type: K3565M The following products presented in this data sheet are being withdrawn. Ordering Code K3565M201 Substitute Product Date of Withdrawal 2011-01-14 Deadline Last Orders 2011-09-30 Last Shipments 2012-09-30 For further information please contact your nearest EPCOS sales office, which will also support you in selecting a

Contextual Info: IF Filters for Quasi/Split Sound Applications Series/Type: K3567D The following products presented in this data sheet are being withdrawn. Ordering Code K3567N301 Substitute Product Date of Withdrawal 2009-12-23 Deadline Last Orders 2010-06-30 Last Shipments

k3564

Abstract: transistor K3564 K356 2SK35
Contextual Info: K3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.)

k3561

Abstract: 2SK3561 K356
Contextual Info: K3561 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI K3561 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 0.75 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 6.5 S (標準)

K3565

Abstract: 2SK3565 K3565 data
Contextual Info: K3565 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV K3565 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 2.0 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 4.5 S (標準)

k3563

Abstract: 2sK3563 2sK3563 datasheet
Contextual Info: K3563 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI K3563 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.35 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 3.5 S (標準)

transistor k3568

Abstract: k3568 2SK3568 K3568 equivalent k3568 transistor 2SK3568 equivalent K356 2sk3568 datasheet
Contextual Info: K3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3568 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.4Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)

2sk3562

Abstract: k3562 transistor K3562 transistor k3562 k3562 voltage transistor compatible k3562 toshiba k3562 2SK3562 K3562
Contextual Info: K3562 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3562 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.9 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.)

2sk3569

Abstract: transistor compatible k3569 k3569 transistor compatible 2SK3569 transistor k3569 K3569 DATASHEET K3569 equivalent K3569 data transistor 2SK3569 k3569 transistor
Contextual Info: K3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3569 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.)

k3562

Abstract: 2SK3562 K3562 2SK3562 2sk3562 equivalent
Contextual Info: K3562 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI K3562 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 0.9 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 5.0 S (標準)

K3561

Abstract: transistor k3561 k3561 transistor k3561 Silicon N Channel MOS Type 2SK3561 equivalent 2SK3561 2sk3561 datasheet K356
Contextual Info: TENTATIVE K3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅥ K3561 unit：ｍｍ Switching Regulator Applications 10±0.3 Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage

transistor K3564

Contextual Info: K3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV K3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V)

k3569

Abstract: 2SK3569 transistor k3569 K3569 data transistor 2SK3569 k3569 transistor k3569 Silicon N Channel MOS Type 2SK3569 application
Contextual Info: K3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3569 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)

K3561

Abstract: transistor k3561 k3561 transistor k3561 transistor application 2sk3561
Contextual Info: K3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)

K3565 transistor

Abstract: transistor K3565 K3565 data k3565 Toshiba 2SK3565 2SK3565
Contextual Info: K3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3565 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)

transistor K3564

Abstract: K3564 k3564 transistor transistor K3564 5 a K3564 toshiba 2SK3564
Contextual Info: K3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)

K3563

Abstract: K3563 Transistor 2sK3563 datasheet 2sK3563
Contextual Info: K3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)

transistor k2333

Abstract: k3332 k2333 K3561 transistor k2182 K2182 k3562 k3272 transistor k1102 k0392
Contextual Info: Multilayer Chip Capacitors X7R/B Characteristic Features ● ● ● ● l High volumetric efficiency Non-linear capacitance change High insulation resistance High pulse strength b s Applications ● ● ● ● Blocking Coupling Decoupling Interference suppression

K3568

Abstract: transistor k3568 2SK3568 K3568 equivalent
Contextual Info: K3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3568 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.4Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)

K3566 transistor

Contextual Info: K3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 5.6 Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.)

k3566

Abstract: K3566 transistor K3566 data sheet 2SK3566 2SK3566 equivalent equivalent k3566 transistor k3566 K3566 equivalent k356 MARKING toshiba 133
Contextual Info: K3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 5.6Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)

transistor K3565

Abstract: K3565 transistor k3565 K356 K3565 data 2SK3565 datasheet 2SK3565 equivalent 2SK3565 12160TC
Contextual Info: K3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3565 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)

transistor compatible k3569

Abstract: K3569 transistor k3569 2SK3569 equivalent 2SK3569 K3569 equivalent transistor compatible 2SK3569 K3569 data K3569 DATASHEET transistor 2SK3569
Contextual Info: K3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3569 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.)