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    Toshiba America Electronic Components 2SK3564(STA4,Q,M)

    MOSFET N-CH 900V 3A TO220SIS
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    DigiKey 2SK3564(STA4,Q,M) Tube 38 1
    • 1 $2.10
    • 10 $2.10
    • 100 $2.10
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    Avnet Americas 2SK3564(STA4,Q,M) Tube 10,591 16 Weeks 1
    • 1 $0.55
    • 10 $0.54
    • 100 $0.52
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    Avnet Asia 2SK3564(STA4,Q,M) 24 Weeks 2,500
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    Powersight PK3564

    PWR ANLYZR DATALOGGER FIELD TEST
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    DigiKey PK3564 Box 1
    • 1 $4862.00
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    Powersight PK3564-PRO

    PWR ANLYZR DATALOGGER FIELD TEST
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    DigiKey PK3564-PRO Box 1
    • 1 $5168.00
    • 10 $5168.00
    • 100 $5168.00
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    Powersight PK3564-PRO-

    PWR ANLYZR DATALOGGER FIELD TEST
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    DigiKey PK3564-PRO- Box 1
    • 1 $5711.00
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    • 100 $5711.00
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    ABB Low Voltage Products and Systems 9T58K3564

    Industrial Control Transformers 1C,1KVA,277-120,100C,C&C,60HZ,TB,IP
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    Mouser Electronics 9T58K3564
    • 1 $1254.66
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    K3564 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    k3564

    Abstract: transistor K3564 K356 2SK35
    Contextual Info: K3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.)


    Original     		2SK3564 k3564 transistor K3564 K356 2SK35 PDF

    transistor K3564

    Contextual Info: K3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV K3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original     		2SK3564 transistor K3564 PDF

    transistor K3564

    Abstract: K3564 k3564 transistor transistor K3564 5 a K3564 toshiba 2SK3564
    Contextual Info: K3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		2SK3564 transistor K3564 K3564 k3564 transistor transistor K3564 5 a K3564 toshiba 2SK3564 PDF

    k3564

    Abstract: transistor K3564 2SK3564 MARKING toshiba 133 LC1M-US-DC24 k3564 transistor transistor K3564 5 a
    Contextual Info: K3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		2SK3564 k3564 transistor K3564 2SK3564 MARKING toshiba 133 LC1M-US-DC24 k3564 transistor transistor K3564 5 a PDF

    k3564

    Contextual Info: K3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.)


    Original     		2SK3564 k3564 PDF

    k3564

    Abstract: TR-22 2SK3564
    Contextual Info: K3564 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV K3564 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 3.7 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.6 S (標準)


    Original     		2SK3564 SC-67 2-10U1B k3564 TR-22 2SK3564 PDF

    transistor K3564

    Abstract: K3564 K3564 toshiba
    Contextual Info: K3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		2SK3564 transistor K3564 K3564 K3564 toshiba PDF

    k3564

    Abstract: 2SK3564 k356 MJ5001
    Contextual Info: K3564 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV K3564 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 3.7 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.6 S (標準)


    Original     		2SK3564 SC-67 2-10U1B k3564 2SK3564 k356 MJ5001 PDF

    k3564

    Abstract: transistor K3564 2SK3564
    Contextual Info: K3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.)


    Original     		2SK3564 k3564 transistor K3564 2SK3564 PDF