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    Advantech Co Ltd SOM-DK3569-00A1

    (Alt: SOM-DK3569-00A1)
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    Avnet Americas SOM-DK3569-00A1 1
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    Vishay Intertechnologies CRCW2010130RFKEF

    Thick Film Resistors - SMD 3/4watt 130ohms 1%
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    TTI CRCW2010130RFKEF Reel 8,000 4,000
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    Bourns Inc RL875S-470L-RC

    RF Inductors - Leaded 47uH 15%
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    TTI RL875S-470L-RC Bulk 1,000
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    Vishay Intertechnologies CW0057K500JE73

    Wirewound Resistors - Through Hole 5watts 7.5Kohms 5%
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    TTI CW0057K500JE73 Reel 500
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    Toshiba America Electronic Components 2SK3569

    SILICON N CHANNEL MOS TYPE (PI-MOSVI) FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA 2SK3569 1,000
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    Win Source Electronics 2SK3569 46,800
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    K3569 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2sk3569

    Abstract: transistor compatible k3569 k3569 transistor compatible 2SK3569 transistor k3569 K3569 DATASHEET K3569 equivalent K3569 data transistor 2SK3569 k3569 transistor
    Contextual Info: K3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3569 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.)


    Original     		2SK3569 2sk3569 transistor compatible k3569 k3569 transistor compatible 2SK3569 transistor k3569 K3569 DATASHEET K3569 equivalent K3569 data transistor 2SK3569 k3569 transistor PDF

    k3569

    Abstract: 2SK3569 transistor k3569 K3569 data transistor 2SK3569 k3569 transistor k3569 Silicon N Channel MOS Type 2SK3569 application
    Contextual Info: K3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3569 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3569 k3569 2SK3569 transistor k3569 K3569 data transistor 2SK3569 k3569 transistor k3569 Silicon N Channel MOS Type 2SK3569 application PDF

    transistor compatible k3569

    Abstract: K3569 transistor k3569 2SK3569 equivalent 2SK3569 K3569 equivalent transistor compatible 2SK3569 K3569 data K3569 DATASHEET transistor 2SK3569
    Contextual Info: K3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3569 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.)


    Original     		2SK3569 transistor compatible k3569 K3569 transistor k3569 2SK3569 equivalent 2SK3569 K3569 equivalent transistor compatible 2SK3569 K3569 data K3569 DATASHEET transistor 2SK3569 PDF

    transistor k3569

    Abstract: K3569 2SK3569 k3569 Silicon N Channel MOS Type k3569 transistor transistor 2SK3569 K356
    Contextual Info: K3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3569 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3569 transistor k3569 K3569 2SK3569 k3569 Silicon N Channel MOS Type k3569 transistor transistor 2SK3569 K356 PDF

    K3569

    Abstract: transistor k3569 K3569 data 2SK3569 2SK3569 application k3569 transistor transistor 2SK3569 k3569 Silicon N Channel MOS Type k356 toshiba k3569
    Contextual Info: K3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3569 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3569 K3569 transistor k3569 K3569 data 2SK3569 2SK3569 application k3569 transistor transistor 2SK3569 k3569 Silicon N Channel MOS Type k356 toshiba k3569 PDF

    k3569

    Abstract: 2SK3569 2-10U1B K3569 DATASHEET K3569 equivalent compatible k3569 2SK3569+equivalent
    Contextual Info: K3569 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI K3569 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 0.54 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 8.5 S (標準)


    Original     		2SK3569 SC-67 2-10U1B k3569 2SK3569 2-10U1B K3569 DATASHEET K3569 equivalent compatible k3569 2SK3569+equivalent PDF

    k3569

    Abstract: 2SK3569 K3569 DATASHEET K3569 equivalent
    Contextual Info: K3569 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI K3569 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 0.54 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 8.5 S (標準)


    Original     		2SK3569 SC-67 2-10U1B k3569 2SK3569 K3569 DATASHEET K3569 equivalent PDF

    K3569

    Abstract: K3569 equivalent K3569 DATASHEET transistor k3569 2SK3569 equivalent 2SK3569 k3569 transistor transistor 2SK3569 k3569 Silicon N Channel MOS Type toshiba k3569
    Contextual Info: K3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3569 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3569 K3569 K3569 equivalent K3569 DATASHEET transistor k3569 2SK3569 equivalent 2SK3569 k3569 transistor transistor 2SK3569 k3569 Silicon N Channel MOS Type toshiba k3569 PDF

    k3569

    Contextual Info: K3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3569 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3569 k3569 PDF