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    Samtec Inc PMSS-03-16C-K-35.63-S

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    Master Electronics PMSS-03-16C-K-35.63-S
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    VPG Foil Resistors Y07868K35630T9L

    High Precision Resistor Metal Foil 8.3563kOhm 0.01% Bulk - Bulk (Alt: Y07868K35630T9L)
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    Avnet Americas Y07868K35630T9L Bulk 20 Weeks 25
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    VPG Foil Resistors Y07938K35630T9L

    High Precision Resistor Metal Foil 8.3563kOhm 0.01% Bulk - Bulk (Alt: Y07938K35630T9L)
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    Avnet Americas Y07938K35630T9L Bulk 25
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    VPG Foil Resistors Y07868K35630T0L

    S102L 8K3563 0.01% - Bulk (Alt: Y07868K35630T0L)
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    Avnet Americas Y07868K35630T0L Bulk 20 Weeks 25
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    VPG Foil Resistors Y07938K35630T0L

    RCK02 8K3563 0.01% - Bulk (Alt: Y07938K35630T0L)
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    K3563 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    k3563

    Abstract: 2sK3563 2sK3563 datasheet
    Contextual Info: K3563 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI K3563 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.35 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 3.5 S (標準)


    Original     		2sk3563sc-672-10u1bk3563+12sk3563 datasheet PDF

    K3563

    Abstract: K3563 Transistor 2sK3563 datasheet 2sK3563
    Contextual Info: K3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2sk3563k3563k3563 transistor2sk3563 datasheet PDF

    K3563 Transistor

    Abstract: K3563 2SK3563 K356 K3563 Transistor test transistor k3563 K3563 applications
    Contextual Info: K3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2sk3563k3563 transistork3563k356+3k3563 transistor testtransistor k3563k3563 applications PDF

    K3563

    Abstract: K3563 Transistor 2SK3563 2sK3563 datasheet K3563 applications
    Contextual Info: K3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.)


    Original     		2sk3563k3563k3563 transistor2sk3563 datasheet+1k3563 applications PDF

    K3563

    Abstract: K3563 Transistor 2SK3563 2sK3563 datasheet k356
    Contextual Info: K3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2sk3563k3563k3563 transistor2sk3563 datasheet+1k356 PDF

    K3563 Transistor

    Abstract: K3563 2sk3563 transistor 625
    Contextual Info: K3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2sk3563k3563 transistork3563transistor 625 PDF

    K3563 Transistor

    Abstract: K3563 transistor k3563 2SK3563 k356
    Contextual Info: TENTATIVE K3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅥ K3563 unit：ｍｍ Switching Regulator Applications 10±0.3 Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage


    Original     		2sk3563k3563 transistork3563transistor k3563+1k356 PDF