2SK2030 Search Results

2SK2030

Contextual Info: T O S H IB A 2SK2030 Field Effect Transistor Unit in mm Silicon N Channel M OS Type ti-MOS IV High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance " r d s (ON) = 0.1 OQ (Typ.) • High Forward Transfer Adm ittance - Yfs = 3 .OS (Typ.)

2SK2030

Abstract: 10VIO
Contextual Info: TOSHIBA Discrete Semiconductors 2SK2030 Field Effect Transistor Unit in mm Silicon N Channel MOS Type c-MOS IV High Speed, High Current Switching Applications F eatures • Low Drain-Source ON Resistance On - F*ds(ON) = 0.1 (Typ.) • High Forward Transfer Admittance

2SK2030

Contextual Info: TOSHIBA 2SK2030 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIV 2SK2030 DC-DC CONVERTER INDUSTRIAL APPLICATIONS U nit in mm • Low Drain-Source ON Resistance : (Typ.) • High Forward Transfer Admittance : |Yfs| = 3.0S (Typ.) • Low Leakage C urrent : iDgg^lOO/^AiM ax.) (Vj)g = 60V)

Contextual Info: TOSHIBA Discrete Semiconductors 2SK2030 Field Effect Transistor Silicon N Channel MOSType c-MOS IV High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - r ds (ON) = 0 .1 0Q (Typ.) • High Forward Transfer Admittance

2sj239

Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
Contextual Info: MOSFET Product Matrix VdssM * 100 *1 20 60 Id A * 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]

2SK2056

Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1

2SK3567 equivalent

Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

2SK3566 equivalent

Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
Contextual Info: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2

2SK1603

Abstract: 2SK3561 equivalent un 1044 2SJ238 2sk1603 datasheet 2SK2039 2SK2030 2SK2056 2SK1487 2SK1078
Contextual Info: 2004-3 .TW M .CO .TW 00Y 1 . OM W WW .100Y.C M.TW O W W WW .100Y.C M.TW T . O W OM W Y.C WW .100Y.C M.TW T . O W OM W.1 WW .100Y.C M.TW WW .100Y.C M.TW O W O W WW .100Y.C M.TW W WW .100Y.C M.TW T . O W M WW 00Y.CO .TW .CO .TW WW .100Y.C M.TW Y W O W OM W.1

2SK2056

Abstract: 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402
Contextual Info: TOSHIBA TOSHIBA POWER MOSFETs 1Q, 1999 Alphanumerically Toshiba Power MOSFET List Alphanumerically Part VDSS RDS ON Number (V) (Ω) ID (A) Package Generation Status 2SJ147 -60 0.2 -12 TO-220IS π -MOSII Non-Promotion 2SJ183 -60 0.35 -5 POWER MOLD L - π -MOSIII

2sk4110

Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
Contextual Info: 2007-3 PRODUCT GUIDE Power MOSFETs 1.Features and Structure. 2 2.New Power MOSFET Products . 3

2SK2056

Abstract: 2SK1603 2SK1377 2SK537 2SK1723 2SK1213 transistor 2SK1603 2sk1603 datasheet 2SJ239 2SK2352
Contextual Info: [ 9 ] Superseded and Discontinued Product List [ 9 ] Superseded and Discontinued Product List [ 9 ] Superseded and Discontinued Product List 1. Superseded Products The following listed products are no longer being promoted in Toshiba’s marketing. Please refer to Recommended Replacement Part Number.

2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228

2SJ239

Abstract: 2SK2030 2SJ201Y 2sk1 2SK2057 2SK2200TP 2sk1544 2SJ201-Y 2SK1079 2SJ238
Contextual Info: MOSFET Characteristic Chart M axim u m R ating Id |Am ps| V oss [Volts] R d s ON Pd [W atts] TYP. [Ohm s| M AX. lO hm sI V qs [Volts] Id [Amps] Vtn (Volts] | ID - 1 mA] A p plicatio n DC/DC converter 2SJ147 T0-220(IS) -12 -60 40 0.17 0.2 -10 -6 -1.5 ~ -3.5

2sK2750 equivalent

Abstract: equivalent 2sk2698 mosfet 2SK1603 2SK2996 equivalent 2SK3569 equivalent 2SK2056 2SK3565 equivalent MOSFET 2SK1358 Transistor Guide 2SK3567 equivalent 2SJ238
Contextual Info: 2004-3 PRODUCT GUIDE Power MOSFETs semiconductor 2004 http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structure .4 3. TFP Series .18 - 21