2SK1467 Search Results

Contextual Info: 2SK1467 m LD L o w D riv e S e rie s V DSs = 3 0 V 2062 N Channel Power M OSFET 3 50 8A F e a tu re s • Low ON resistance. • Very high-speed switching. •Low-voltage drive. A b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage

2SK1885

Abstract: 2SK2437 2SK2438
Contextual Info: 0 ID Series Lineup VDSS = 30V, N-channel Absolute maximum ratings atT a= 25°C Typelto. Package Voss V 2SK1847 (V) CP 2SK1467 2SK1724 VGSS ±15 •o (A) m 0.5 0.25* 2.0 1.0 PCP 2SK2437 i2 0 2SK1468 P d* VGS(off) min to max (V) 1.0 to 2.0 3.5 2.0 4.0 Electrical characteristics atTa = 25°C

2SK1467

Abstract: marking Kc X-6948
Contextual Info: Ordering number:EN3508A N-Channel Silicon MOSFET 2SK1467 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SK1467] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max

2SK1467

Contextual Info: Ordering number:EN3508A N-Channel Silicon MOSFET 2SK1467 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SK1467] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max

e1220

Abstract: 2SK2437
Contextual Info: SAfiYO New Products Of New Package 5/6-pi n XP Seri es :FX type 1 The Sanyo new package 5/6-pin XPs are intermediate sized devices between Sanyo PCP and TP packages and have high power capability. This package line includes large current switching transistor series, power MOS FET series, and other device series.

Contextual Info: Ordering number:EN4893 FX853 MOSFET:N-Channel Silicon MOSFET SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type composed of a low ON-resistance Nchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward

TA-0118

Abstract: MOSFET FOR 50HZ SWITCHING APPLICATIONS
Contextual Info: Ordering number:EN4893 FX853 MOSFET:N-Channel Silicon MOSFET SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type composed of a low ON-resistance Nchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward

2SK2747

Abstract: 2SK2748 2SJ403 2SK536 2SK1467 2SJ254 2SJ255 2SJ256 2SJ263 2SJ264
Contextual Info: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta » 251C RDS(on)@ID ' VGS W Voss (V) ID (A) PD (W) Teh 0« V 6^*> RDS(on) max(Q) to |Yf»| VDS • M> (A) Vgs (V) VDS 00 to (A) 2SJ282

FX604

Abstract: 2SK1467
Contextual Info: Ordering number:EN4887 FX604 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Composite type composed of two low ON-resistance N-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting.

2SK1467

Contextual Info: Ordering num ber:EN35Ö8A 2SR1467 N0.35O8A N-Channel MOS Silicon FET Very High-Speed Switching Applications F eatu res • Low ON resistance. - Very high-speed switching. • Low-voltage drive. A b so lu te M axim um R atin gs at Ta = 25°C Drain to Source Voltage

J289

Abstract: 3SK266 2SK1728 3sk251 DS-17 SANYO
Contextual Info: SAftYO Small-signal MOSFETs Feat, u r e s ♦ Very low noise figure * Large IYf s I * Low gate leak current Sma11-sized package permitting FET-used sets to be made smaller Case Out 1inesiunit:mm SANYO:CP4 x Lr Amp, Low Noise, Analog Switch Impedance Conversion Applications

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

CI 7001

Abstract: 2SD1203 SS170 2sb1205 2SD180
Contextual Info: so h yo New Products Of New Package 5/6-pin XP Series FX type The Sanyo new package 5 /6 - p in XPs a re in te rm e d ia te siz e d d e v ic e s between Sanyo PCP and TP packages and have high power c a p a b il i ty . T h is package lin e in c lu d e s la rg e c u rre n t sw itc h in g t r a n s i s t o r s e r i e s , power MOS FET s e rie s , and o th e r d evice s e rie s .

2sk3436

Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Contextual Info: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis

2SK146

Contextual Info: Ordering num ber: EN4892 _ FX852 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC/DC Converter Applications Features • Composite type composed of a low ON-resistance N-channel MOSFET for ultrahigh-speed switching and Iow-voltage driving and a fast-recovery, low forward-voltage Schottky barrier diode. Facilitates

K1412

Abstract: K1413 K1464 K923A 2sk1412 to220ml AK1052 AK924 2SJ193 2SK1460
Contextual Info: PE5L 89-10 SANYO SEMICONDUCTOR CORP 32E D 7 ci c17G7ti □Q0ci 2 ci l a T '3 ? '0 / ííS^V:í¿^^^i¿^<#rA‘ííf'A,íí'í»ltlKi-niS .040450’ vJ|tV Sanyo Power MOSFETs SANYO Electric Co.,Ltd. Semiconductor Division MKM Series 8 0 0 4 -9 2 9 9 SENICOiiilUCTOR CORP

2SK1467

Abstract: FX853 ITR11601 ITR11602 ITR11603 ITR11604 ITR11605 ITR11606 ITR11608 SB05
Contextual Info: 注文コード No. N 4 8 9 3 FX853 No. N 4 8 9 3 72500 MOSFET : N チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード FX853 特長 DC / DC コンバータ用 ・低オン抵抗超高速スイッチング、低電圧駆動の N チャネル MOS 形電界効果トランジスタと逆回復時間が

2SK1471

Abstract: 2SK2153 2SK1474 2SB1205 160i FX209 2SJ188 2SJ336 2SK1468 CI 7001
Contextual Info: SAUYO New Products Of New Package 5/6-pin XP Series FX type The Sanyo new package 5/6-pin XPs are intermediate sized devices between Sanyo PCP and TP packages and have high power capability. This package line includes large current switching transistor series, power MOS FET series, and other device series.

Contextual Info: Power MOSFETs Electrical characteristic» T. » 31 °Q AtooMe mKknum ratings . Owto» _ - Pwtogi Appflcaflons m _ ' _ Voss » _ Voss w t# w 2SJ284* CP Very high-speed switch 30 ±15 0.3 2SJ285* CP Very high-speed switch 60 ±15 0.25 2SJ286* CP Very high-speed switch

J289

Abstract: K2171 2sj281 2SK1847 2SK1470 KD K1470 2sk669 K1311
Contextual Info: Small-signal Features MOS FETs ♦ Very low noise_ figure * Large _ |Yfs| # Low gate leak current * Small-sized packageipermitting — ' i ♦ FET-used sets to be made, smaller Case Oct 1in.es /uni I.:a SANYO :C:'4 sjc LF Amp, Low Noise, Analog Switch Impedance Conversion Applications

Contextual Info: Ordering num ber: EN 4893 _FX853 No.4893 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC/DC Converter Applications F eatu res • Composite type composed of a low ON-resistance N-channel MOSFET for ultrahigh-speed switching

2SK1487

Abstract: LM 1495 2sk1477 2SK1486 2SK1480 1494z 2SK1470 2SK1482 2SK1491 2SK1465
Contextual Info: - 106 - M % tt « m £ m it Í V Ì 1 % K £ ft ft « V* V P d /P c h *t* (V) * * ft * (A) (W) Ig s s (max) (A) Vg s (V) (min) (A) (max) V d s (A) (V) (Ta=25°C) ft 4# % (min) (max) V d s (V) (V) (V) £ m (min) (S) Id (A) Vd s (V) Id (A) 2SK1465 HS SW

2sk3436

Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Contextual Info: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。

FX604

Contextual Info: Ordering num ber:EN4887 samyo i N°-4^ II _ N-Channel SiliconFX604 MOSFET Ultrahigh-Speed Switching Applications a _ Features • Composite type composed of two low ON-resistance N-channel MOSFET chips for ultrahigh-speed