41293TH Search Results

Contextual Info: 2SK1419 2063 AP A d v a n ce d P e rfo rm a n c e Series Voss= 6 0 V N Channel Power M OSFET F eatures • Low ON resistance. • Very high-speed switching. • Converters. • Micaless package facilitating mounting. A bsolute M axim um R atings at Ta = 25°C

2SK1414

Abstract: ir 9637
Contextual Info: Ordering num ber: EN 4 2 3 0 _ 2SK1414 No.4230 N-Channel MOS Silicon FET High-Voltage High-Speed Switching Applications F e a tu r e s - Low ON resistance, low input capacitance, very high-speed switching. • H igh reliability Adoption of H VP process .

2SJ192

Abstract: EN3765
Contextual Info: Ordering number:EN3765 P-Channel Silicon MOSFET 2SJ192 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ192] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5

2SK1414

Contextual Info: Ordering number:EN4230 N-Channel Silicon MOSFET 2SK1414 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability Adoption of HVP process . unit:mm 2077A

2SK1413

Contextual Info: Ordering number:EN4229 N-Channel Silicon MOSFET 2SK1413 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability Adoption of HVP process . · Micaless package facilitating mounting.

2092A

Contextual Info: 2SJ192 2083A LD L o w D rive S eries V Dss=60V 2092A P Channel Power M OSFET Features • Low ON resistance. • Very high-speed switching. •Low-voltage drive. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage

2SJ193

Abstract: 41293TH 37662
Contextual Info: Ordering number: EN3766 _ 2SJ193 N o.3766 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s •Low ON resistance. • Very high-speed switching. ■Low-voltage drive. A b s o lu te M ax im u m R a tin g s at T a=25°C

2SK1467

Contextual Info: Ordering num ber:EN35Ö8A 2SR1467 N0.35O8A N-Channel MOS Silicon FET Very High-Speed Switching Applications F eatu res • Low ON resistance. - Very high-speed switching. • Low-voltage drive. A b so lu te M axim um R atin gs at Ta = 25°C Drain to Source Voltage

Contextual Info: 2SK1467 m LD L o w D riv e S e rie s V DSs = 3 0 V 2062 N Channel Power M OSFET 3 50 8A F e a tu re s • Low ON resistance. • Very high-speed switching. •Low-voltage drive. A b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage

2SK1311

Contextual Info: 2SK1311 2062 LD L o w D rive S eries V d ss = 6 0 V N Channel Power M OSFET F e a tu re s • Low ON resistance. •Very high-speed switching. • Low-voltage drive. A b s o lu te M ax im u m R a tin g s a t T a = 25°C D rain to Source Voltage Vdss G ate to Source Voltage

Contextual Info: 2SK1414 207 7 U H U l t r a h i g h V o l t a g e S e r ie s V DSs = 1 5 0 0 V N Channel Power M OSFET £4230 F eatures • Low ON resistance, low input capacitance, very high-speed switching. • High reliability (Adoption of HVP process). A bsolute M axim um R atings at Ta = 25°C

Contextual Info: 2SJ194 _ 2 0 9 2 A_ ^ LD L o w D riv e S e rie s V d s s = 1 0 0 V P Channel Power M OSFET 13767 F eatures - Low ON resistance. •Very high-speed switching. • Low-voltage drive. isolute M axim um R atings at Ta = 25°C Drain to Source Voltage

Contextual Info: 2SK1414 2077 U H {U ltra h ig h V o lta g e S eries V Dss= 1 5 0 0 V N Channel Power MOSFET 4230 F eatu res • Low ON resistance, low input capacitance, very high-speed switching. • High reliability Adoption of HVP process). A bsolute M axim um R atings at Ta = 25°C

ns 4203

Abstract: 2SK1886 FI1216
Contextual Info: O rd e rin g n u m b e r :E N 4 2 0 3 SA\YO 2SK1886 No.4203 N-Channel MOS Silicon FE T i Very High-Speed Switching Applications F e a tu re s •Low ON resistance. - Very high-speed switching. •Low-voltage drive. - M icaless package facilitating mounting.

2SK1419

Contextual Info: Ordering number:EN3557A N-Channel Silicon MOSFET 2SK1419 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Converters. · Micaless package facilitating mounting. unit:mm 2063A [2SK1419]

2SK1413

Contextual Info: Ordering number:EN4229 N-Channel Silicon MOSFET 2SK1413 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability Adoption of HVP process . · Micaless package facilitating mounting.

2SK1413

Contextual Info: Ordering number : EN 4 2 2 9 _2SK1413 No.4229 N-Channel MOS Silicon FET High-Voltage High-Speed Switching Applications Features • Low ON resistance, low input capacitance, very high-speed switching. •High reliability Adoption of HVP process .

2SJ192

Contextual Info: Ordering number:EN3765 P-Channel Silicon MOSFET 2SJ192 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ192] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5

Contextual Info: 2SK1412 2078 U H U ltra h ig h V o lta g e S e rie s V DSS= 1 5 0 0 V N Channel Power MOSFET 4228 F e atu re s • Low ON resistance, low input capacitance, very high-speed switching. • High reliability (Adoption of HVP process). • Micaless package facilitating mounting.

k141

Contextual Info: 2SK1412 2078 U H U ltra h ig h V o lta g e S eries V DSS= 1 5 0 0 V N Channel Power M O SFET E 4228 F e a tu re s - Low ON resistance, low input capacitance, very high-speed switching. • High reliability (Adoption of HVP process). • M icaless package facilitating m ounting.

EN3767

Abstract: 2SJ194
Contextual Info: Ordering number:EN37 67 _ 2SJ194 No.3767 P-Channel MOS Silicon FET Very High-Speed Switching Applications Featu res •Low ON resistance. •Very high-speed switching. •Low-voltage drive. i solute Maximum R atings at Ta —25°C Drain to Source Voltage

1J23 fet

Abstract: 2SJ192 EN3765
Contextual Info: Ordering number: EN3765 _ 2SJ192 No.3765 P-Channel MOS Silicon FET SA IVO i Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. - Very high-speed switching. • Low-voltage drive. A b s o lu te M axim um R a tin g s a t Ta = 25°C

2SK1412

Contextual Info: Ordering number : EN 4228 _ 2SK1412 N-Channel MOS Silicon FET High-Voltage High-Speed Switching Applications F eatures - Low ON resistance, low input capacitance, very high-speed switching. • High reliability Adoption of HVP process . • Micaless package facilitating mounting.

2SK1419

Contextual Info: O rdering n um b er:-EN 3 5 57 A 2SK1419 N0.3557A N-Channel MOS Silicon FET SANYO- i Very High-Speed Switching Applications F e a tu re s • Low ON resistance. • Very high-speed switching. • Converters. • Micaless package facilitating mounting. A b so lu te M axim um R atings a tT a = 25°C