2SJ26
Contextual Info: VDSS = 60V, P-channel Absolute maximum ratings at Ta = 25°C Type No. Package VDSS W 2SJ285 Voss V CP 2SJ190 •o (A) Po' W 0.25 0.25* ^GS(off) min to max (V) 1.0 PCP ^DS (on) RoS(on) typ/maxat Vß$-4V (ii) typ/maxat VGS = 10V 3.0/4.0 2.2/3.0 0.35 45 1.2/1.6
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marking BM
Abstract: "MARKING BM" 2SJ285 EN4221
Contextual Info: Ordering number:EN4221 P-Channel Silicon MOSFET 2SJ285 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2091A 0.4 3 0.5 [2SJ285] 0.16 0.95 0.95 2 1.9 2.9 2.5
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ITR00362
Abstract: ITR00363 2SJ285 ITR00358 ITR00359 ITR00360 ITR00361
Contextual Info: 注文コード No.N 4 2 2 1 A 2SJ285 No. 4 2 2 1 A 61599 半導体ニューズ No.4221 とさしかえてください。 2SJ285 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。
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2SJ285
Abstract: marking BM
Contextual Info: Ordering number:EN4221 P-Channel Silicon MOSFET 2SJ285 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2091A 0.4 3 0.5 [2SJ285] 0.16 0.95 0.95 2 1.9 2.9 2.5
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Contextual Info: Power MOSFETs Electrical characteristic» T. » 31 °Q AtooMe mKknum ratings . Owto» _ - Pwtogi Appflcaflons m _ ' _ Voss » _ Voss w t# w 2SJ284* CP Very high-speed switch 30 ±15 0.3 2SJ285* CP Very high-speed switch 60 ±15 0.25 2SJ286* CP Very high-speed switch
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2SJ285
Contextual Info: Ordering n u m b e r:E N 4 2 2 1 _ 2SJ285 P-Channel MOS Silicon FET Very High-Speed Switching Applications F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage
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2sk77
Abstract: 2SK772 2SK444 2sk20 2SK1332 2SK968 2sk332 2sk427 2SK36 2sk377 j
Contextual Info: SAftYO Smal 1-signal u r e s F e a FETs Case Outlines unit:mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. ♦ Very low noise figure »Large lYfsl * Low gate leak current ♦ Small-sized package permitting FET-used sets to be made smaller alt LF Amp.Low Noise,Analog Switch,Impedance Conversion Applications
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2sc3153
Abstract: 2SJ335 transistor 2sc4460 2SC4427 2sc4460 2SC3151 2SC3152 2SC3277 2SC3448 2SC3449
Contextual Info: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta « 25 ~C hre@VCE • 1C VCBO (V) VCEO (V) V ebo (V) (A) (W ) A 1C PC fr@ VC E ■ IC tf(toff) max U s) (A) fr (MHz) 2SC3151 T03PB Switching requlator
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74HCT244B1
Abstract: epson 320X240 MC68K Sharp HR TFT PNP power transistors by hitachi p948 MC68EZ328 VR4181A user manual
Contextual Info: S1D13706 Embedded Memory LCD Controller S1D13706 TECHNICAL MANUAL Document Number: X31B-Q-001-06 Copyright 2001 Epson Research and Development, Inc. All Rights Reserved. Information in this document is subject to change without notice.You may download and use this document, but only for your own use in
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s1d13706x31b-q-001-06res2827-4346x31b-g-018-02+9104-pin74hct244b1epson 320x240mc68ksharp hr tftpnp power transistors by hitachip948mc68ez328vr4181a user manual
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2310 dhi
Abstract: epson t11 toshiba LCD 320X240 toshiba lcd inverter pinout transistor p945 micro transistor T5c transistor NEC D 882 p 37 PIN TFT MOBILE DISPLAY 8K 7W14F schematic diagram crt tv sharp
Contextual Info: S1D13706 Embedded Memory LCD Controller S1D13706 TECHNICAL MANUAL Document Number: X31B-Q-001-06 Copyright 2001 Epson Research and Development, Inc. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in
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s1d13706x31b-q-001-06sa-1110x31b-g-019-02+102310 dhiepson t11toshiba lcd 320x240toshiba lcd inverter pinouttransistor p945micro transistor t5ctransistor nec d 882 p37 pin tft mobile display 8k7w14fschematic diagram crt tv sharp
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2SK968
Abstract: 2SK1375 2sk2073 2SK1747 2SK333 2SK544 2SK937 2SK669 2SK332 2SK715
Contextual Info: b3E » • 7Ti7G7b 0012422 T2Û « T S A J S A 0 Y O Small-signal F e a t u r e s FETs Case Outlines unit-'mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. *Very low noise figure * Large lYfsl * Low gate leak current * Smal1-si zed package permitting FET-used sets to be made smaller
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2sk3436
Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Contextual Info: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis
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SK968
Abstract: 2SK937 2SK544 2SK669 2SJ286 2SK5 2SK212 2SK543 2SK436 2SK715
Contextual Info: Smal 1-signal SA*YO FETs Features ♦ Very low noise figure * Large IYfsI * Low gate leak current Case Outlines unit¡mm SANYO:SMCP ♦ Small-sized package permitting FET-used sets to be made smaller l¡Source, 2¡Drain, 3¡Gate, i LF ),Low Noise,Analog Switch,Impedance Conversion Applications
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2sk3436
Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Contextual Info: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。
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1b15 shf la
Abstract: 2310 dhi S1D13706F00 toshiba lcd power board schematic lcd tv inverter board schematic 20X2 LCD DISPLAY PINOUT 37 PIN TFT MOBILE DISPLAY 8K transistor NEC D 882 p EPC1441PC8 ir3e203
Contextual Info: S1D13706 Embedded Memory LCD Controller S1D13706 TECHNICAL MANUAL Document Number: X31B-Q-001-06 Copyright 2001 Epson Research and Development, Inc. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in
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s1d13706x31b-q-001-06sa-1110x31b-g-019-02+101b15 shf la2310 dhis1d13706f00toshiba lcd power board schematiclcd tv inverter board schematic20x2 lcd display pinout37 pin tft mobile display 8ktransistor nec d 882 pepc1441pc8ir3e203
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