T03PB Search Results

2SC3953

Abstract: TRANSISTOR T0220 2SC3597
Contextual Info: Horizontal deflection output composite transistor Absolute maximum ratings _ . I Package . Application T IT Vcbo Vcbo nn (V) HPA72R* T03PBL °"!fk (wilh high-speed damper diode) HPA100R T03PBL “ H PA.M T03PBL * “ “ “ Ä T Vceo Vceo lc >c Electrical characteristics (T, = 25 deg. C)

2sc3153

Abstract: 2SJ335 transistor 2sc4460 2SC4427 2sc4460 2SC3151 2SC3152 2SC3277 2SC3448 2SC3449
Contextual Info: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta « 25 ~C hre@VCE • 1C VCBO (V) VCEO (V) V ebo (V) (A) (W ) A 1C PC fr@ VC E ■ IC tf(toff) max U s) (A) fr (MHz) 2SC3151 T03PB Switching requlator

2sk 2056

Contextual Info: 2SK1448 AP A d v a n c e d P e rfo rm a n c e Series V dss = 4 5 0 V 2056 N Channel Power M OSFET F eatu res • Low ON-state resistance. • Very high-speed Switching. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage

transistor d 1825 7c

Abstract: BU406
Contextual Info: SANYO SEMI CON DUCTOR CORP IB E D I BU406. 407 Tn?07b D00S4flti T ' 3 3 - / / NPN Epitaxial Planar Silicon Transistors 2010A C R T Horizontal Output Applications 1. Structure: Silicon NPN epitaxial planar transistor 2. Package: JEDEC: TO-220AB 3. Use: CRT display horizontal deflection output

TRANSISTOR T0220

Abstract: 2SC4429 2sc3990
Contextual Info: S WI TC HI NG POWER TRANSISTOR F e a t u r e s ☆ Short switching time ☆ High br ea kdown voltage ☆ Wide ASO ☆ High reliability because of planar type ate H i g h - S p e e d Type U s e ☆Switching regulators ☆Motor control MBIT P r o c e s s Package

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

Contextual Info: sanyo s e m ic o n d u c t o r corp ~ 1 2 E D | 7 cH 7 Q 7 L i OOOSOb'J r ' 3 3 - I S NPN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications with Damper Diode 1222C Features: • High Breakdown Voltage and High Reliability.

SD-1 diode

Abstract: sd 150 zener diode
Contextual Info: s o 00 3> Continued from preceding page. -C O Classified by package and arranged in order of increasing Vq j o I(\ Absolute Maximum Ratings/Ta=25“C Case Applications VCBO VCBO VEBO IC [V] [V] [V] [A] PC I Ij VCB *TC=25*C [•C] [V] [W] ICEO (max [A] fT

transistor T K 2056

Abstract: K 2056 transistor transistor K 2056
Contextual Info: SANYO SEMICONDUCTOR 12E CORP D | 7 T ci 7 D 7 t 1 0 0 0 S S 0 0 g 32S C 4256 SS2SC4271 Silicon Transistor Silicon Transistor ' High Voltage Switching Applications Very High-Oefinrtion CR T Display Applications JEDEC: T 022 0 package JEDEC: T0126 package High breakdown voltage

2SD1401

Abstract: 2042A 5033K
Contextual Info: SANYO SEMI CONDUCTOR CORP ÍSE D I 7 cH 7 a 7 b UDOSQflL, T' 33' 3 2SD1401 NPN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications 1268B Features: • High breakdown voltage and high reliability • High switching speed

2SC3998

Abstract: using of damper in Horizontal Output Transistor 6-10T 2SC4891 transistor 2SC3998 2sc3997 2sc3996 IT0-22 2sc5042
Contextual Info: SAf/YO T r a n s i s t o r s f o r V e r y H i g h - D e f in i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 2 ajc S t i - u c t u r e a n d Structure patterned with a large number of units consisting of base island £nd emitter region as shown

horizontal deflection

Contextual Info: TV/CRT Display Application Transistors II Absolute maximum ratings Package Device Application type VCBO (V) VcEO (V) Vebo (V) ic (A) m Electrical characteristics (Ta = 25 deg. C) Tj Pc VcEfMfj @ ! c - I b (deg. C) VcEjsat) (V) tire @ Vce ic tf max tc (A)

2sb1303

Contextual Info: SANYO SEMICONDUCTOR ' CORP 1EE II | 7 1 1 7 0 71 1 O M S im T -il' £>l S S 2 S B 1 2 3 1 / 2 S D 1 841 S S 2 S B 1 3 2 5 /2 S D 1 999 Complementary Pair Silicon Transistors Complementary Pair Silicon Transistors Low Saturation Voltage Amp Applications Motor Driver Applications

2sk1885

Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Contextual Info: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

TO-126LP

Contextual Info: Precautions when handling transistors 1. Lead forming and cutting Sanyo transistor products are available in a range of lead configurations and lengths. As required, however, you can form or cut package leads to meet the needs of specific applications. As a general precaution, you should always handle

transistor 2SC3998

Contextual Info: SILICON TRANSISTORS FOR TV/VTR USE VERY HIGH-DEFINITION DISPLAY HORIZONTAL DEFLECTION OUTPUT, VIDEO OUTPUT APPLICATIONS : New product Classified by package and arranged in order of increasing P q . Minus sign for PNP is omitted due to space limitations.

Contextual Info: Ordering number : EN1983A SB200-05H No.i983A Schottky B arrier Diode Twin Type • Cathode Common 50V, 20A Rectifier A pplications • High frequency rectification (switching regulators, converters, choppers) F e a tu re s • Low forward voltage (Vp max = 0.55V)

gutre

Abstract: 2SK1449
Contextual Info: Ordering n u m b e r:EN 3452 2SK1449 N-Channel MOS Silicon FET Very High-Speed Switching Applications Features • Low ON-state resistance. • Very high-speed switching. A bsolute M aximum Ratings at Ta = 25°C Drain to Source Voltage VdSS Gate to Source Voltage

2SB827

Contextual Info: Ordering number: EN688G 2 S B 8 2 7 /2 S D 1 0 6 3 PNP/NPN Epitaxial Planar Silicon Transistors 50V/7A Switching Applications Use : U n i v e r s a l h ig h c u r r e n t s w i tc h i n g as s o l e n o i d d r i v i n g , h ig h sp e e d i n v e r t e r and c o n v e r t e r .

2SC3644

Abstract: 777T
Contextual Info: O rd e rin g n u m b e r: EN 1628C N0.1628C 2SC3644 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition Display Horizontal Deflection Output Applications i oi i— Features • High reliability Adoption of HVP process . • High speed. • High breakdown voltage.

2SD439

Abstract: 2SB559 transistor af 126 JIS G 3201
Contextual Info: SANYO SEMICONDUCTOR CORP 1EE D I 7 cH 7 G 7 b □ □ □ 3CIÛ2 S T - 3i-n 2SB559 PNP/ npn Epitaxial Planar Silicon Transistors 2009A Low Frequency Power Amp, Medium Speed Switching Applications 2SD439 372E Features . Large allowable collector dissipation and wide ASO.

2SC930

Abstract: transistor 2SC930 2SC930NP 2SC2839 2SC930SPA 2SC930 D
Contextual Info: SANYO SEMICONDUCTOR CORP l^ifir|~^?cn 7 0 7 b % 2SC930 D004141 r-s/'/5r T “ 3 2 03 3 í - | 7 NPN. Epitaxial Planar Silico n Transistor 200 3 A AM Converter, FM RF • IF Amp Applications 545E The 2SC930 has two types of packges SPA and NP. Use • FM RF amp, mixer, OSC, converter, and IF amplifier.

EN3572

Abstract: 2SK1434
Contextual Info: O rdering n u m b e r:E N 3 5 7 2 2SK1434 N-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON-state resistance. • Very high-speed switching. • Converters. A b so lu te M axim um R atin g s a t Ta = 25°C Drain to Source Voltage

ce 2826 ic

Contextual Info: O rdering num ber: EN 2826 Jo.2826 HPA100R NPN Triple Diffused Planar Silicon Composite Transistor Ultrahigh-Defmition CRT Display Horizontal Deflection Output Applications F e a tu re s • Highspeed tf typ = 100ns • High breakdown voltage (Vcbo = 1500V)