2SJ276
Contextual Info: Ordering number: EN4749 _ 2SJ276 No.4749 P-Channel MOS Silicon FET Very High-Speed Sw itching Applications F e a tu r e s • Low ON resistance. •Very high-speed switching. • Low-voltage drive. ■Surface m ount type device m aking the following possible.
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EN4749
Abstract: 2SJ276
Contextual Info: Ordering number:EN4749 P-Channel Silicon MOSFET 2SJ276 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2090A [2SJ276] 10.2 4.5 3 1.2 2.55 0 to 0.3 0.4 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD 2.7 2.55 2 1.35 1 0.8 2.55 Specifications
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2SJ276
Abstract: ITR00328 ITR00329 ITR00330 ITR00331 ITR00332 ITR00333
Contextual Info: 注文コード No.N 4 7 4 9 2SJ276 No. 4 7 4 9 52099 新 2SJ276 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。 ・ 面実装に対応し工数低減およびセットの高密度 , 小型化が可能となる。
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EN4749
Abstract: 2SJ276
Contextual Info: Ordering number:EN4749 P-Channel Silicon MOSFET 2SJ276 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2090A [2SJ276] 10.2 4.5 3 1.2 2.55 0 to 0.3 0.4 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD 2.7 2.55 2 1.35 1 0.8 2.55 Specifications
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2sk1885
Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Contextual Info: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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on line ups circuit diagrams
Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
Contextual Info: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm
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2SK2164
Abstract: 2SK1885 2SJ270 2SJ260 2sj261
Contextual Info: SAßiYO Power MOS FETs 3 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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2SJ270
Abstract: 2SJ26
Contextual Info: VDSS = 100V, P-channel Absolute maximum ratings atTa = 25°C Type No. Pactage VDSS m 2SJ286 VGSS •o W A CP 0.15 2SJ193 2SJ289 PCP SNIP NMP ±20 100 ±15 2.0 20 4.0 30 (£1) 6.5/9.0 2.4/3.5 Ciss typ typ (S) (pF) 5.0/7.0 0.27 45 1.8/2.4 1.0 160 6.5/9.0 5.0/7.0
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2SJ468
Abstract: 2SJ191 2SJ271 2SJ260 2SJ189 2SJ192 2SJ194 2SJ195 2SJ281 2SJ336
Contextual Info: Continued from previous page Electrical characteristics Ta = 25 V Absolute maximum ratings Type No. Package type Applications Rds(<w) @ Id •VGS VOSS (V) VGSS (V) ID (A) PD (W) Tdi OC) |Yfi|@ VDS ■ID RDS(mi) max(Q) Id (A) VGS (V) JA VDS (V) (A) 2S JI8 8
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TT2192
Abstract: sma4212 2SJ519 2sc5681 2SK1871 2SC5044 2SK3666 2sc6091 2SC5688 EC4K01KF
Contextual Info: Ordering number : E I 0 0 9 2 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis or discontinued.
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