2SJ26 Search Results

2SJ268

Contextual Info: O rdering num ber: EN4237 _ 2SJ268 No.4237 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible.

2SJ263

Abstract: EN4234
Contextual Info: Ordering num ber:E N 4 2 3 4 _ 2SJ263 P-Channel MOS Silicon FET No.4234 Very High-Speed Switching Applications i Features •Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Micaless package facilitating mounting. Absolute Maximum Ratings atTa = 25°C

EN4746

Abstract: 2SJ264
Contextual Info: Ordering number:EN4746 P-Channel Silicon MOSFET 2SJ264 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating easy mounting. unit:mm 2063A

2SJ266

Abstract: ITR00258 ITR00259 ITR00260 ITR00261 ITR00262 IT00265
Contextual Info: 注文コード No.N 4 2 3 6 2SJ266 No. 4 2 3 6 三洋半導体ニューズ 52099 新 2SJ266 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。

2SJ263

Abstract: ITR00228 ITR00229 ITR00230 ITR00231
Contextual Info: 注文コード No.N 4 2 3 4 2SJ263 三洋半導体ニューズ No. 4 2 3 4 52099 新 2SJ263 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。

2SJ267

Contextual Info: Ordering number: EN4747 _ 2SJ267 N o .4747 P-C hannel M OS S ilicon FET SAXYO i Very High-Speed Switching Applications F e a tu r e s •Low ON resista n ce. - V ery high-sp eed sw itch in g. • L ow -voltage drive. - Surface m ount type d evice m aking the follow ing possible

2SJ261

Abstract: SC46 T0220AB
Contextual Info: - KNo. N *5271 N o . % 5271 SAN YO 90795 2SJ261 P^-V *;H V IO SJfi'> ' □ h V > i > X9 ü£¡6 ttf t v ^ y # . •m t m su. Absolute Maximum Ratings / Ta = 25°C K 1- " { 'y - 'J —XfiïJIÎ Vugs y -h -y -x E Kl" f DC) K V 'i y ^ M (^.Jl/X) VGSS ID

EN4234

Abstract: 2SJ263
Contextual Info: Ordering number:EN4234 P-Channel Silicon MOSFET 2SJ263 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ263]

2SJ265

Contextual Info: Ordering number:EN4235 P-Channel Silicon MOSFET 2SJ265 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ265]

bx 18A

Abstract: 2SJ268 ITR00278 ITR00279 ITR00280 ITR00281 ITR00282
Contextual Info: 注文コード No.N 4 2 3 7 2SJ268 No. 4 2 3 7 三洋半導体ニューズ 61599 新 2SJ268 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。

2SJ265

Abstract: ITR00248 ITR00249 ITR00250 ITR00251
Contextual Info: 注文コード No.N 4 2 3 5 2SJ265 No. 4 2 3 5 52099 新 2SJ265 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。 ・マイカレスパッケージで取り付け作業性が良い。

2SJ268

Contextual Info: Ordering number:EN4237 P-Channel Silicon MOSFET 2SJ268 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SJ268] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.

2SJ266

Contextual Info: Ordering number:EN4236 P-Channel Silicon MOSFET 2SJ266 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SJ266] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.

L177 E

Abstract: 2SJ264 4746 diode
Contextual Info: — Ordering number: EN 4746 '•»' 2SJ264 No.4746 P-Channel MOS Silicon FET SAWOi Very High-Speed Switching Applications Features ■Low ON resistance. • Very high-speed switching. ■Low-voltage drive. • Micaless package facilitating easy mounting.

2SJ267

Abstract: ITR00268 ITR00269 ITR00270 ITR00271 ITR00272
Contextual Info: 注文コード No.N 4 7 4 7 2SJ267 No. 4 7 4 7 三洋半導体ニューズ 61599 新 2SJ267 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。

2SJ264

Abstract: ITR00238 ITR00239 ITR00240 ITR00241 2SJ26
Contextual Info: 注文コード No.N 4 7 4 6 2SJ264 No. 4 7 4 6 52099 新 2SJ264 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。 ・マイカレスパッケージで取り付け作業性が良い。

Contextual Info: 2SJ268 2093 2090 LD L o w D riv e S e rie s V dss = 60V P Channel Power MOSFET £4237 F e a tu re s • Low ON resistance. • V ery high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SJ268-applied equipm ent.

2sj28

Abstract: 2SJ72 2sj26 2SJ83 2SJ99 2SJ96 2SJ18 2SJ82 2SJ90 2SJ73
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) Pd/Pch Tj/Tch min UP07 2N5465 2SJ10 2SJ11 2SJ12 2SJ13 2SJ15 2SJ16 2SJ17 2SJ18 2SJ19 2SJ20 2SJ21 2SJ22 2SJ26 2SJ27 2SJ28 2SJ29 2SJ32 2SJ33 2SJ39 2SJ40

Contextual Info: 2SJ265 LD L o w D rive S eries VDSs = 6 0 V 2063 P Channel Power M OSFET i_ £•4235 F e a tu re s ■Low ON resistance. ■Very high-speed switching. • Low-voltage drive. ■M icaless package facilitating m ounting. b s o lu te M ax im u m R a tin g s a t Ta = 25°C

4235

Abstract: 2SJ265
Contextual Info: O rd e rin g n u m b e r: EN 4 2 3 § -, 2SJ265 No.4235 P-Channel MOS Silicon FET Very High-Speed Switching Applications F eatures - Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Micaless package facilitating mounting. A bsolute M axim um R atings at Ta = 25°C

EN4234

Abstract: 2SJ263
Contextual Info: Ordering number:EN4234 P-Channel Silicon MOSFET 2SJ263 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ263]

2sj26

Contextual Info: 2SJ266 2093 2090 L D { L o w D rive S e r ie s V DSs=z 6 0 V P Channel Power M OSFET f 4236 F e a tu re s • Low ON resistance. - Very high-speed switching. - Low-voltage drive. • Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SJ266-applied equipm ent.

Contextual Info: 2SJ263 LD L o w D rive S eries V Dss:= 6 0 V 2063 P Channel Power M OSFET .£•4234 F e a tu re s ■Low ON resistance. ■Very high-speed switching. ■Low-voltage drive. • M icaless package facilitating m ounting. A b so lu te M ax im u m R a tin g s a t Ta = 25°C

EN4235

Abstract: 2SJ265
Contextual Info: Ordering number:EN4235 P-Channel Silicon MOSFET 2SJ265 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ265]