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    2SJ267 Search Results

    2SJ267 Datasheets (4)

    Sanyo Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SJ267
    Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF 92.07KB 4
    2SJ267
    Sanyo Semiconductor TO-3PB, ZP, SMP Type Transistors Scan PDF 103.11KB 1
    2SJ267
    Sanyo Semiconductor Ultra High Speed Switching MOSFET Scan PDF 187.23KB 1
    2SJ267
    Sanyo Semiconductor Large Signal Power MOSFET Scan PDF 511.51KB 3

    2SJ267 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SJ267

    Contextual Info: Ordering number: EN4747 _ 2SJ267 N o .4747 P-C hannel M OS S ilicon FET SAXYO i Very High-Speed Switching Applications F e a tu r e s •Low ON resista n ce. - V ery high-sp eed sw itch in g. • L ow -voltage drive. - Surface m ount type d evice m aking the follow ing possible


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    en47472sj2672sj267-applied10//s PDF

    2SJ267

    Abstract: ITR00268 ITR00269 ITR00270 ITR00271 ITR00272
    Contextual Info: 注文コード No.N 4 7 4 7 2SJ267 No. 4 7 4 7 三洋半導体ニューズ 61599 新 2SJ267 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。


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    2sj267--10v--30vitr00274+8itr00275itr00276itr00277itr00268itr00269itr00270itr00271itr00272 PDF

    2SJ267

    Contextual Info: Ordering number:EN4747 P-Channel Silicon MOSFET 2SJ267 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2090A 10.2 [2SJ267] 4.5 3 1.2 2.55 0 to 0.3 0.4 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD 2.7 2.55 2 1.35 1 0.8 2.55 Specifications


    Original
    en47472sj2672sj267applied2sj267-applied PDF

    2sk1885

    Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
    Contextual Info: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and


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    2SJ26

    Contextual Info: VDSS = 60V, P-channel Absolute maximum ratings at Ta = 25°C Type No. Package VDSS W 2SJ285 Voss V CP 2SJ190 •o (A) Po' W 0.25 0.25* ^GS(off) min to max (V) 1.0 PCP ^DS (on) RoS(on) typ/maxat Vß$-4V (ii) typ/maxat VGS = 10V 3.0/4.0 2.2/3.0 0.35 45 1.2/1.6


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    2sj2852sj1902sj2882sj191+62sj1922sj3622sj414o-220o-220ml2sj26 PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


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    ao4405ao4407ao4408ao4409+16ao4410ao4411ao4413ao4415ao4422ao4700irf1830girf1830transistor irf1830gapm2054n equivalentapm2054nap85l02hap70n03s2sk3683ap70l02h2sk2696 PDF

    2sk3436

    Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
    Contextual Info: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis


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    tnd023ffx504cph5504mch5805+16fx505hpa72rtnd024ffx506mch3301tnd024mp2sk34362sa18722sc60932sc49432sa19702sk38502sk1597tt20842sc52672sk3744 PDF

    2SK2164

    Abstract: 2SK1885 2SJ270 2SJ260 2sj261
    Contextual Info: SAßiYO Power MOS FETs 3 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and


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    2SJ468

    Abstract: 2SJ191 2SJ271 2SJ260 2SJ189 2SJ192 2SJ194 2SJ195 2SJ281 2SJ336
    Contextual Info: Continued from previous page Electrical characteristics Ta = 25 V Absolute maximum ratings Type No. Package type Applications Rds(<w) @ Id •VGS VOSS (V) VGSS (V) ID (A) PD (W) Tdi OC) |Yfi|@ VDS ■ID RDS(mi) max(Q) Id (A) VGS (V) JA VDS (V) (A) 2S JI8 8


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    2sk3436

    Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
    Contextual Info: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。


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    40610hkpctc-00002289cph5815mch5815+16mch6629mch6649cph6610cph6614sch1411sch14362sk34362sc60932sa18722sk15972sk38502sc5269tt20842sc49432sc57932sa1970 PDF

    SBA10Q-O4Y

    Abstract: 2SK2439 2SJ40 SK2555 FW106
    Contextual Info: • Application Examples Synchronous rectifier Mounted Photos Synchronous Rectifier) ■ Electrical Connections ■ SOP8 Guaranteed Source-Wire Fusing Current I d (A.) ■ Device Lineup ♦ Schottky Barrier Diodes Absolute maximum ratings (Ta = 25 C) Package


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    2S1265

    Abstract: bj 950 131- 6 2SK1885 2SJ type 2sj262 2SK1883 2SK3066 2SK2432 2SJ253 2SJ260
    Contextual Info: Large-signal Power MOSFETs l The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and


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    low-126t0-126lpt0-220cit0-220ml+16sc-67ot-186o-220fisc-67ks0t-189t0-220mflsdwatt2202s1265bj 950 131- 62sk18852sj type2sj2622sk18832sk30662sk24322sj2532sj260 PDF