2SJ13 Search Results

2SJ130

Abstract: Hitachi DSA00347
Contextual Info: 2SJ130 L , 2SJ130(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators

Hitachi DSA002756

Abstract: Hitachi 2SJ
Contextual Info: 2SJ130 L , 2SJ130(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators

2SJ132

Abstract: Scans-009532
Contextual Info: M O S Field E ffect P o w e r T ransistors 2SJ1 32,1 32-Z n # o n y , 7 1 .«:%. <Vc*=- 4 V> f/> r Kft« *•<•[«T“f . H Rum-1 <- 0.25 0> n t c n + H M l ' . # : . k A H t r t A V ' m n 2SJ132 Z B ' W r ' l . - K I C 1 t * U Ä J i 'l '> - K t o r .JÄ T + .

2sJ133 MOSFET

Abstract: 2SJ133 2SJ133-Z 133Z
Contextual Info: データ・シート MOS形電界効果パワー・トランジスタ MOS Field Effect Power Transistors 2SJ133,133-Z Pチャネル・パワー MOSFET スイッチング用 特 徴 外形図（単位：mm） ★ 6.5 ±0.2 ○2SJ133-ZはハイブリッドIC実装に最適なリード加工品です。

Contextual Info: 2SJ134 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)6.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)24 @Pulse Width (s) (Condition)100u Absolute Max. Power Diss. (W)40# Minimum Operating Temp (øC)

Contextual Info: 2SJ132 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)20 I(D) Max. (A)2.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20 Minimum Operating Temp (øC)

Contextual Info: 2SJ133 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)2.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20 Minimum Operating Temp (øC)

Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SJ132,132-Z P-CHANNEL POWER MOSFET FOR SWITCHING <R> FEATURES PACKAGE DRAWING UNIT: mm 5.0 ±0.2 Unit VGS = 0 V −30 V VGSS VDS = 0 V m20 V Drain current (DC) ID(DC) TC = 25°C m2.0 A Drain current (pulse) ID(pulse)

nec 772

Abstract: 2SJ138 NEC J 302 NEC 7900 fet 9411 7824 5A C9411 m 9619 3A03U
Contextual Info: M O S Field E ffe ct P o w e r T ra n sisto r 2SJ138 MOS rj 2SJ138 i , v y FET T . f o t i i - v f X > r r ^ 5VïÉtëi&IC < i ftw m ( i | i f i : mm z v t o en •+ > m û # . < , ■■/ ^ > n # i 4 1 ^ a t ^ h fz ih , -t - a ? , 41 MAX. en 10.0 O

ht 25 transistor

Abstract: 2SJ139
Contextual Info: ~J m o s y=7 > > * 9 M O S F ield E ffe c t P o w e r T r a n s is to r J 2SJ139 P MOS FE T nm m 2SJI39U. P -f n ffiljK i Ô* MOS FET ~C. 5 Y « * 4 1C « « ! * ry & iiv n t, y u Z 4 K, ->>-r<rU9 P « * * n m S 1 l{ i : mm -f / f > r ^ ' < f X T t . *-*.

Contextual Info: 2SJ130 L , 2SJ130(S) Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators

D1619

Abstract: 2SJ133 2SJ133-Z C11531E
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ133, 2SJ133-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Gate drive available at logic level (VGS = –4 V) • High current control available in small dimension due to low RDS(on) (≅ 0.45 Ω)

ULTRASONIC parking system

Abstract: Hitachi 2SJ Hitachi DSA001651
Contextual Info: 2SJ130 L , 2SJ130(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators

drain body breakdown voltage

Abstract: 2SJ130S
Contextual Info: Transistors IC SMD Type Silicon P-Channel MOS FET 2SJ130S TO-252 Features Low on-resistance High speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 ultrasonic power oscillators 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15

2SJ135

Abstract: JEP-772 UPC1100
Contextual Info: M O S Field E ffe c t P o w e r T ra n s is to r 2SJ135 MOS 2SJ135 i i , P f ^ ^ oT l l \ t } i 2 £ h v * > k M . MOS F E T T , l ' Î f ë r < . k *7 - •> > x -r ■■/ * > ? r y f- > r i # f ± 5 V '» ^ IC / < -f X ¥-i*V : m m ) T -f „ t, i # a

2SJ139

Abstract: 2SJ139,J139
Contextual Info: NEC P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SJ139 The 2SJ139 is P-Channel MOS Field E ffect Power Transistor PAC KAG E D IM EN SIO N S designed fo r solenoid, m o to r and lamp driver. FEATURES • 4 V Gate Drive — Logic level —

Contextual Info: 2SJ138 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)48 @Pulse Width (s) (Condition)100u Absolute Max. Power Diss. (W)60 Minimum Operating Temp (øC)

Contextual Info: 2SJ135 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)5.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)20 @Pulse Width (s) (Condition)25 Absolute Max. Power Diss. (W)30 Minimum Operating Temp (øC)

2sJ132 MOSFET

Abstract: 2SJ132 2SJ132-Z 132-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SJ132,132-Z P-CHANNEL POWER MOSFET FOR SWITCHING PACKAGE DRAWING UNIT: mm FEATURES 6.5 ±0.2 • 2SJ132-Z is a lead process product and is ideal for mounting a hybrid IC. 5.0 ±0.2 −30 V VGSS VDS = 0 V m20

k 3919

Abstract: 2SJ137
Contextual Info: N E C ELECTRONICS INC ' Tfi DE j b 4 S 7 S B S O D n D S l □ | ~ T ^ P RELIMINARY SFEClFiCAT.C MOS FIELD EFFECT TRAXSISTC: 2SJ137 FAST SWITCHING P-CHANNEL SILICON POWER MOS FET PACKAGE DIMENSIONS Features U nit : m m Suitable for switching power supplies,

2sj28

Abstract: 2SJ72 2sj26 2SJ83 2SJ99 2SJ96 2SJ18 2SJ82 2SJ90 2SJ73
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) Pd/Pch Tj/Tch min UP07 2N5465 2SJ10 2SJ11 2SJ12 2SJ13 2SJ15 2SJ16 2SJ17 2SJ18 2SJ19 2SJ20 2SJ21 2SJ22 2SJ26 2SJ27 2SJ28 2SJ29 2SJ32 2SJ33 2SJ39 2SJ40

2sj155

Abstract: GDS-820 2SJ162 2SJ140 2S1164 2SJ159 2SJ144 2SJ147 2SJ138 2SJ139
Contextual Info: - 20 - f =e m ¡s *± € m S & ft £ * K V * * (V) Pp/PCH * (A) (W) te m 5(1 (Ta=25‘ C) Igss (max) (A) 9f è JV ie , X I* V * Vg s (V) (min) (A) (max) (A) Vd s (V) (min) (V) (max) (V) Vd s (V ) Id (A) (min) (S) ! 3 > Vds (V ) ÍD (A) 2SJ138 NEC SW

2SJ136

Contextual Info: r M O S F ie ld E f f e c t P o w e r T r a n s is to r 2SJ136 FE T l i f f l 2SJ1361Ì. P + - * MOS F E T ? . 5 V « f t f t 1C f i m ì i i z t « * « » « & £ • - u t ', c u t x < 7t > * * '• < * T - r . tU . x f t- f. « I MAX • / w / < K. ^ y - r / iW P P u liü ^ i- .

Contextual Info: 2SJ130 L , 2SJ130(S) Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators