2SJ20 Search Results

2SJ20 Datasheets (113)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SJ20	Unknown	FET Data Book	Scan	PDF	92.15KB	2
2SJ20	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	90.68KB	1
2SJ20	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	80.61KB	1
2SJ200	Toshiba	Pch Power MOSFET; ; Package: TO-3P(N); R DS On (max 0.83); I_S (A): (max -10)	Original	PDF	273.02KB	5
2SJ200	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF	1.45MB	45
2SJ200	Toshiba	P-Channel MOSFET	Original	PDF	156.99KB	4
2SJ200	Toshiba		Original	PDF	44.05KB	9
2SJ200	Unknown	FET Data Book	Scan	PDF	108.17KB	2
2SJ200	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	113.15KB	1
2SJ200	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	58.42KB	1
2SJ200	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	62.59KB	1
2SJ200	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	63.92KB	1
2SJ200	Toshiba	TRANS MOSFET P-CH 180V 10A 3(2-16C1B)	Scan	PDF	182.41KB	3
2SJ200	Toshiba	Field Effect Transistor Silicon P Channel MOS Type	Scan	PDF	182.41KB	3

2SJ200	Toshiba	Silicon P channel field effect transistor for high power amplifier applications	Scan	PDF	164.74KB	3
2SJ200-O	Toshiba	2SJ200 - TRANSISTOR 10 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, 2-16C1B, 3 PIN, FET General Purpose Power	Original	PDF	291.66KB	5
2SJ200O	Toshiba	TRANS MOSFET P-CH 180V 10A 3(2-16C1B)	Scan	PDF	182.41KB	3
2SJ200-Y	Toshiba	2SJ200 - TRANSISTOR 10 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, 2-16C1B, 3 PIN, FET General Purpose Power	Original	PDF	291.66KB	5
2SJ200Y	Toshiba	TRANS MOSFET P-CH 180V 10A 3(2-16C1B)	Scan	PDF	182.41KB	3
2SJ200-Y(F)	Toshiba	2SJ200 - MOSFET P-CH 180V 10A TO-3	Original	PDF	291.66KB	5

2SJ20 Price and Stock

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TE Connectivity ROX2SJ200K RES 200K OHM 5% 2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	ROX2SJ200K	Cut Tape	5,580		1	1 $0.27 10 $0.17 100 $0.11 1000 $0.09 10000 $0.09	Buy Now
	ROX2SJ200K	Ammo Pack	4,000		1,000	1 - 10 - 100 - 1000 $0.08 10000 $0.06	Buy Now
Avnet Americas	ROX2SJ200K	Box		13 Weeks, 3 Days	12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	ROX2SJ200K		7,736			1 $0.22 10 $0.14 100 $0.10 1000 $0.07 10000 $0.06	Buy Now
Newark	ROX2SJ200K	Bulk			12,000	1 - 10 - 100 - 1000 - 10000 $0.06	Buy Now
Avnet Abacus	ROX2SJ200K			18 Weeks	12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Master Electronics	ROX2SJ200K					1 $0.06 10 $0.06 100 $0.06 1000 $0.06 10000 $0.05	Buy Now
TE Connectivity	ROX2SJ200K		5,580		1	1 $0.15 10 $0.14 100 $0.14 1000 $0.13 10000 $0.12	Buy Now
Panasonic Electronic Components ERG-2SJ202 RES 2K OHM 5% 2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERG-2SJ202	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Panasonic Electronic Components ERG-2SJ203V RES 20K OHM 5% 2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERG-2SJ203V	Ammo Pack				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Panasonic Electronic Components ERG-2SJ202E RES 2K OHM 5% 2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERG-2SJ202E	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Samtec Inc BE40C-92SJ-2-02-900 REPLACEMENT CABLE FOR 50 GHZ, BU
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BE40C-92SJ-2-02-900	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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2SJ20 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SJ201 Abstract: 2SJ20 Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR 2SJ201 SILICON P CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 03.3 ±0.2 20.5MAX : Vd s s ^-ZOOV MIN. 16.01 . High Breakdown Voltage . High Forward Transfer Admittance : \| Yfs \| -5.OS (TYP.) : « o -H o O (D	OCR Scan	2SJ201 2SK1530 Ta-25 2-21F1B -10mA, 2SJ201 2SJ20	PDF
2SK1118 Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220 Contextual Info: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531	OCR Scan	2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 2SK387 2SK572 2SK578 2SK1118 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220	PDF
TRANSISTOR bH-10 Abstract: marking BH-10 2SJ200 2SK1529 SC-65 Contextual Info: TO S H IB A 2SJ200 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ200 HIGH POWER AMPLIFIER APPLICATION U nit in mm 1 5 .9 M A X . • High Breakdown Voltage • High Forward Transfer Admittance : \|Yfs\|= 4 .0 S Typ. • Complementary to 2SK1529	OCR Scan	2SJ200 2SK1529 SC-65 2-16C1B TRANSISTOR bH-10 marking BH-10	PDF
marking H17 Abstract: SMD Transistor h17 2SJ209 mosfet vgs 5v vds 100v max6017 smd h17 Contextual Info: MOSFET SMD Type MOS Fied Effect Transistor 2SJ209 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 its high input impedance. 0.55 Not necessary to consider driving current because of +0.1 1.3-0.1 +0.1 2.4-0.1 Directly driven by Ics having a 5V poer supply.	Original	2SJ209 OT-23 -10mA marking H17 SMD Transistor h17 2SJ209 mosfet vgs 5v vds 100v max6017 smd h17	PDF
2SJ201 Abstract: 2SK1530 toshiba pb includes Contextual Info: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −200 V z High forward transfer admittance : \|Yfs\| = 5.0 S typ. z Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25°C)	Original	2SJ201 2SK1530 2-21F1B 2SJ201 2SK1530 toshiba pb includes	PDF
Contextual Info: TOSHIBA Discrete Semiconductors 2SJ200 Field Effect Transistor 2 Silicon P Channel M O ST ype L -ti-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance	OCR Scan	2SJ200	PDF
7741B Abstract: 2SJ205 Contextual Info: DATA SHEET MO S FIELD EFFECT TRANSISTOR 2SJ205 P-CHANNEL MOS FET FOR SWITCHING The 2SJ205, P-channel vertical type MOS FET, is a switching device PACKAG E DIMENSIONS U n it: mm which can be driven by 3 V power supply. As the MOS FET is driven by lo w voltage and does n o t require con	OCR Scan	2SJ205, 7741B 2SJ205	PDF
TC-2329A Abstract: F16V 2SJ207 IEI-1213 iei-1209 Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ207 P-CHAIMNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit: mm The 2SJ207, P-channel vertical type MOS FET, is a switching device which can be driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require con	OCR Scan	2SJ207 2SJ207, TC-2329A F16V 2SJ207 IEI-1213 iei-1209	PDF
c 2328a Abstract: 2SJ206 T500 Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ206 P-CHANNEL MOS FET FOR SWITCHING The 2SJ206, P-channel vertical type MOS FET, is a switching device	OCR Scan	2SJ206 2SJ206, c 2328a 2SJ206 T500	PDF
Contextual Info: 2SJ200 東芝電界効果トランジスタシリコンPチャネルMOS形 2SJ200 ○ 低周波電力増幅用単位: mm : VDSS = −180V z 高耐圧です。 z 高順方向伝達アドミタンスです。 : \|Yfs\|= 4.0S 標準 z 2SK1529 とコンプリメンタリになります。	Original	2SJ200 2SK1529	PDF
2SK1529 Abstract: K1529 2SJ200 Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 2SK1529 K1529 2SJ200	PDF
2SK1530 Abstract: 2SJ201 Contextual Info: TOSHIBA 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 530 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : Vj gg = 200V High Forward Transfer Admittance : \|Yfs\| = 5.0S Typ.) Complementary to 2SJ201	OCR Scan	2SK1530 2SJ201 2SK1530	PDF
2SK1529 Abstract: Toshiba 2SJ Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 2SK1529 Toshiba 2SJ	PDF
Toshiba 2SJ Abstract: toshiba marking code transistor 2SK1530 toshiba Contextual Info: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 200V z High forward transfer admittance : \|Yfs\| = 5.0 S typ. z Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25°C)	Original	2SK1530 2SJ201 Toshiba 2SJ toshiba marking code transistor 2SK1530 toshiba	PDF

Contextual Info: DATA SHEET NEC / ELECTRON DEVICE MOS FIELD EFFECT TRANSISTOR 2SJ209 P-CHANNEL MOS FET FOR SW ITCHING The 2SJ209, P-channel vertical type MOS PET, is a switching device PACKAGE D IM E N S IO N S U n it : mm which can be driven directly by the output o f ICs having a 5 V power	OCR Scan	2SJ209 2SJ209, b2SJ209 VP15-00 WS60-Q0	PDF
l1209 Contextual Info: DATA SHEET NEC / M O S FIELD EFFECT TRANSISTOF 2SJ205 P-CHANNEL MOS FET FOR SW ITCHING PACK AG E D IM E N S IO N S U n it: mm The 2SJ205, P-channel vertical type M OS FE T, is a switching device which can be driven by 3 V power supply. As the MOS FE T is driven by low voltage and does not require con	OCR Scan	2SJ205 2SJ205, VP15-00 WS60-00 l1209	PDF
2SK1529 Abstract: 2SJ200 K1529 SC-65 toshiba pb includes toshiba 2-16c1b Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 180 V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 2SK1529 2SJ200 K1529 SC-65 toshiba pb includes toshiba 2-16c1b	PDF
R621 Contextual Info: DATA SHEET NEC / MOS FIELD EFFECT TRANSISTOR _ / 2SJ204 ELÈCTRON DEVICE / P-CHANNEL MOS FET FOR SW ITCHING The 2SJ204, P-channel v ertical ty p e M OS FE T, is a sw itch in g device P A C K A G E D IM E N S IO N S Unit : mm w h ich can be driven d ire c tly by the o u tp u t o f ICs having a 5 V pow er	OCR Scan	2SJ204 2SJ204, WS60-0Q R621	PDF
2sk1530 Abstract: 2SJ201 Toshiba 2SJ Contextual Info: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = −200 V l High forward transfer admittance : \|Yfs\| = 5.0 S typ. l Complementary to 2SK1530 Maximum Ratings (Ta = 25°C)	Original	2SJ201 2SK1530 2sk1530 2SJ201 Toshiba 2SJ	PDF
2SK1530 Abstract: 2SJ201 toshiba pb includes Contextual Info: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 200 V z High forward transfer admittance : \|Yfs\| = 5.0 S typ. z Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25°C)	Original	2SK1530 2SJ201 2SK1530 2SJ201 toshiba pb includes	PDF
2SJ208 Contextual Info: データ・シート MOS形電界効果トランジスタ MOS Field Effect Transistor 2SJ208 Pチャネル MOS FET スイッチング用外形図（単位：mm） 2SJ208は，2.5 V駆動タイプのPチャネル縦形MOS FETです。本MOS FETは低電圧で駆動でき，かつドライブ電流を考慮する必	Original	2SJ208 2SJ2082 Cycle50 D18277JJ4V0DS004 TC-7744B D18277JJ4V0DS 2SJ208	PDF
2SJ209 Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 P-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit : mm 2.8 ± 0.2 1.5 The 2SJ209, P-channel vertical type MOS F E T, is a switching device	OCR Scan	2SJ209 2SJ209, 2SJ209	PDF
Contextual Info: TOSHIBA 2SK1530 Field Effect Transistor Silicon N Channel MOS Type n-MOS II High Power Amplifier Application Features • High Breakdown Voltage - VDSS = 200V (Min.) • High Forward Transfer Admittance - 'Yfs' = 5.OS (Typ.) • Complementary to 2SJ201 • Enhancement-Mode	OCR Scan	2SK1530 2SJ201	PDF
Contextual Info: TOSHIBA 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 530 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : VDgg = 200V High Forward Transfer Admittance : \|Yfs\| = 5.0S Typ. Complementary to 2SJ201	OCR Scan	2SK1530 2SJ201 2SK1530·	PDF

2SJ20 Search Results

2SJ20 Datasheets (113)

2SJ20 Price and Stock

TE Connectivity ROX2SJ200K

Panasonic Electronic Components ERG-2SJ202

Panasonic Electronic Components ERG-2SJ203V

Panasonic Electronic Components ERG-2SJ202E

Samtec Inc BE40C-92SJ-2-02-900

2SJ20 Datasheets Context Search

2SJ201

2SK1118

TRANSISTOR bH-10

marking H17

2SJ201

7741B

TC-2329A

c 2328a

2SK1529

2SK1530

2SK1529

Toshiba 2SJ

l1209

2SK1529

R621

2sk1530

2SK1530

2SJ208

2SJ209