2SJ10 Search Results

2SJ103

Abstract: 2SK246 IDSS -14mA
Contextual Info: 2SJ103 TO S H IB A TO SHIBA FIELD EFFECT TRANSISTOR SILICON P C HANN EL JUNCTION TYPE 2 S J 1 03 Unit in mm FOR A U D IO AMPLIFIER, A N A LO G SW ITCH, CONSTANT CURRENT A N D IM PEDANCE CONVERTER APPLICATIONS . 5.1 M A X . High Breakdown Voltage :V jDg = 50V

2SJ102

Abstract: K346 K3465 2SK345 2SJ101 2SK346 K346 fet
Contextual Info: H IT A C H I ! /-co PT O E L E C T R O N I C S } 7 3 D — -^ W 2 T T 5 ^ m rra U H I / OP'IO LLhCTRUNlUü; e 73C J ^ H L E D S m 10017 a D 2SK345,2SK346 S ILIC O N N -C H A N N E L M O S FET HIGH SPEED POWER SW ITCHING. LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ101, 2SJ102

2SJ105

Abstract: 2SK330 ad0z
Contextual Info: TO SH IB A 2SJ105 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P C HANN EL JUNCTION TYPE 2 S J 1 05 U nit in mm FOR A U D IO AMPLIFIER, A N A LO G SW ITCH, CONSTANT CURRENT A N D IM PEDANCE CONVERTER APPLICATIONS 4 .2 M A X . High Breakdown Voltage :V GD g = 5 0 V

Contextual Info: T O SH IB A 2SJ106 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P C HANN EL JUNCTION TYPE 2 S J 1 06 A U D IO FREQUENCY AMPLIFIER APPLICATIONS A N A LO G SWITCH APPLICATIONS CONSTANT CURRENT APPLICATIONS IM PEDANCE CONVERTER APPLICATIONS Unit in mm High Breakdown Voltage : V q d § = 50V

2sj111

Abstract: 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ122
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) ID Pd/Pch Tj/Tch min 2SJ101 2SJ102 2SJ103 2SJ104 2SJ105 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 2SJ111 2SJ112 2SJ113 2SJ114 2SJ115 2SJ116 2SJ117 2SJ118

2SJ106

Contextual Info: 2SJ106 TO SH IBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2 S J 1 06 Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS ANALOG SWITCH APPLICATIONS CONSTANT CURRENT APPLICATIONS IMPEDANCE CONVERTER APPLICATIONS + 0.5 2.5 - 0.3 • High Breakdown Voltage : VQDg = 50V

2SJ105

Abstract: 2SK330
Contextual Info: 2SJ105 TO SH IBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2 S J 1 05 Unit in mm FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS 4 .2 M A X — — H 1 1 1 High Breakdown Voltage : VQDg = 50V

2SJ105

Abstract: 2SK330 Toshiba 2SJ
Contextual Info: 2SJ105 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ105 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • High breakdown voltage: VGDS = 50 V • High input impedance: IGSS = 1.0 nA max (VGS = 30 V)

2SJ107

Abstract: 2SK366 Toshiba 2SJ
Contextual Info: 2SJ107 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ107 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • Unit: mm High input impedance: IGSS = 1.0 nA max (VGS = 25 V) • Low RDS (ON): RDS (ON) = 40 Ω (typ.)

2SJ103

Abstract: 2SK246 2SJ10 TOSHIBA 2SK246 Toshiba 2SJ TOSHIBA 2SJ103
Contextual Info: 2SJ103 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ103 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • High breakdown voltage: VGDS = 50 V • High input impedance: IGSS = 1.0 nA max (VGS = 30 V)

2SJ106

Abstract: 23F1B 2SJ1062 Toshiba 2SJ
Contextual Info: 2SJ106 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ106 Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications Unit: mm • High breakdown voltage: VGDS = 50 V

2SJ1062

Abstract: 2SJ106 Toshiba 2SJ
Contextual Info: 2SJ106 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ106 Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications Unit: mm • High breakdown voltage: VGDS = 50 V

2SJ107

Abstract: 2SK366
Contextual Info: 2SJ107 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ107 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • Unit: mm High input impedance: IGSS = 1.0 nA max (VGS = 25 V) · Low RDS (ON): RDS (ON) = 40 Ω (typ.)

2SJ105

Abstract: 2SK330
Contextual Info: 2SJ105 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ105 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = 50 V · High input impedance: IGSS = 1.0 nA max (VGS = 30 V)

2SJ106

Contextual Info: T O S H IB A 2SJ106 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P C HANN EL JUNCTION TYPE 2 S J 1 06 A U D IO FREQUENCY AMPLIFIER APPLICATIONS A N A L O G SWITCH APPLICATIONS CONSTANT CURRENT APPLICATIONS IM PEDANCE CONVERTER APPLICATIONS High Breakdown Voltage

2SJ109

Abstract: 2-10M1A 2SK389 equivalent 2SK389
Contextual Info: 2SJ109 TOSHIBA 2 S J 1 09 TOSHIBA FIELD EFFECT TRANSISTOR SILICON MONOLITHIC P CHANNEL JUNCTION TYPE Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS DIFFERENTIAL AMPLIFIER APPLICATIONS • • 1 Chip Dual Type High |Yfs| |Yfsl —22mS Typ. (VDS= -1 0 V , V g s = 0,

2SK370

Abstract: 2SJ108
Contextual Info: TOSHIBA 2SJ108 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2 S J 1 08 LOW NOISE AUDIO AMPLIFIER APPLICATIONS • U nit in mm Recommended for First Stages of EQ Amplifiers and MC Head 4.2MAX — Amplifiers. • High |Yfs| x: < I fSI ro 1

2SJ105

Abstract: 2SK330
Contextual Info: TOSHIBA 2SJ105 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P C HANNEL JUNCTION TYPE 2 S J 1 05 Unit in mm FOR A U D IO AMPLIFIER, A N A L O G SW ITCH, CONSTANT CURRENT A N D IM PEDANCE CONVERTER APPLICATIONS — High Breakdown Voltage : VQDg = 50V High Input Impedance : I@gg = l.OnA Max. (V(jg = 30V)

2sj111

Abstract: 2SJ131 2SJ112 2SJ110 2SJ122 2SK722 2SJ121 2sj135 2SJ106 2SJ129
Contextual Info: - 18 - §ü % tt € m tit ià ië f f j II =e 1 K 2SJ106 L F A, A - S W 2SJ107 L F A, A ~ S W j fë £ V* V * t* (V) ft * W. X I* ft (A) P d/ Pc h (max) (A) (W) M 4# te (max) (V) Vd s (V) (Ta=25Tï) I gss Vg s (V) (min) (A) (max) V d s (A) (V) (min) (V)

2SJ106

Contextual Info: 2SJ106 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ106 Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications Unit: mm • High breakdown voltage: VGDS = 50 V

2SJ107

Abstract: 2SK366
Contextual Info: TOSHIBA 2SJ107 2 S J 1 07 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE Unit in mm FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS • • • • 4.2MAX —H — 1 1 1 1 1 High Input Impedance : IGgg = l.OnA Max. (VGg = 25V)

Contextual Info: T O SH IB A 2SJ108 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2 S J 1 08 Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS Recommended for First Stages of EQ Amplifiers and MC Head Amplifiers. 4 .2 M A X . H igh |Yfs| : |Yfs| = 22mS Typ. (VDS= —10V, VGS = 0, IDSS= -3m A )

2SK364

Abstract: 2SJ104 Toshiba 2SJ
Contextual Info: 2SJ104 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ104 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • Unit: mm High input impedance: IGSS = 1.0 nA max (VGS = 25 V) • Low RDS (ON) = 40 Ω (typ.) (IDSS = −5 mA)

2SJ107

Abstract: 2SK366 Toshiba 2SJ
Contextual Info: 2SJ107 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ107 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • Unit: mm High input impedance: IGSS = 1.0 nA max (VGS = 25 V) • Low RDS (ON): RDS (ON) = 40 Ω (typ.)