23F1B Search Results

2SK208

Contextual Info: T O S H IB A 2SK208 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK208 GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER U nit in mm MICROPHONE APPLICATIONS + 0.5 2.5-0.3 • + 0.25 1.5-0.15 High Breakdown Voltage :V GD g = —50V •

2SA1015

Abstract: 2SA10150 2SA1015 0
Contextual Info: 4 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS ''" M i t t - ZSClölO AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS FEATURES : • High Voltage and High Current. VCEO=50V (Min.), Ic=150mA (Max.)

2SK711

Contextual Info: 2SK711 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK711 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS typ. • Low Ciss: Ciss = 7.5 pF (typ.)

Contextual Info: T O SH IB A 2SJ106 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P C HANN EL JUNCTION TYPE 2 S J 1 06 A U D IO FREQUENCY AMPLIFIER APPLICATIONS A N A LO G SWITCH APPLICATIONS CONSTANT CURRENT APPLICATIONS IM PEDANCE CONVERTER APPLICATIONS Unit in mm High Breakdown Voltage : V q d § = 50V

Transistor GR 1815

Abstract: 2sc1815 transistor fe2c
Contextual Info: TO SHIBA 2SC1815 Transistor Unit in m m Silicon NPN Epitaxial Type 5 . 1 MAX. Audio Frequency General Purpose Amplifier Applications Driver Stage Applications Features • High Voltage and High Current - VCE0 = 50V Min. , Ic = 150mA (Max.) • Excellent hFE Linearity

Contextual Info: 2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

2SK711

Contextual Info: TO SH IBA 2SK711 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK711 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS AM HIGH FREQUENCY AMPLIFIER APPLICATIONS + 0.5 2.5 - 0.3 AUDIO FREQUENCY AMPLIFIER APPLICATIONS • High |Yfs| : |Yfs| = 25mS Typ.

Contextual Info: 2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

Contextual Info: 2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

2SK209

Contextual Info: 2SK209 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK209 Audio Frequency Low Noise Amplifier Applications • High |Yfs|: |Yfs| = 15 mS typ. at VDS = 10 V, VGS = 0 • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.)

2SJ106

Abstract: 23F1B 2SJ1062 Toshiba 2SJ
Contextual Info: 2SJ106 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ106 Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications Unit: mm • High breakdown voltage: VGDS = 50 V

2SK368

Abstract: 2SK3683
Contextual Info: 2SK368 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK368 Audio Frequency and High Voltage Amplifier Applications Constant Current Applications • High breakdown voltage: VGDS = −100 V min • High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V)

2SJ1062

Abstract: 2SJ106 Toshiba 2SJ
Contextual Info: 2SJ106 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ106 Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications Unit: mm • High breakdown voltage: VGDS = 50 V

2SK208

Abstract: 2SK2082
Contextual Info: 2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

Contextual Info: TOSHIBA 2SK209 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K2 0 9 Unit in mm AU D IO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS High |Yfc| + 0.5 2 .5 -0 .3 : |Yfs| = 15mS Typ. at VDg = 10V, VGS = 0 + 0.25 .1 .5 -0 .1 5 High Breakdown Voltage : V<3Dg=—50V

2SJ106

Contextual Info: T O S H IB A 2SJ106 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P C HANN EL JUNCTION TYPE 2 S J 1 06 A U D IO FREQUENCY AMPLIFIER APPLICATIONS A N A L O G SWITCH APPLICATIONS CONSTANT CURRENT APPLICATIONS IM PEDANCE CONVERTER APPLICATIONS High Breakdown Voltage

transistor z ss

Contextual Info: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK711 U nit in mm H IG H FR EQUENCY A M P LIF IE R A PP LIC A T IO N S . A M H IG H FREQUENCY A M P LIF IE R A PP LIC A T IO N S . 2. 5îg1 A U D IO FREQUENCY A M P LIF IE R A PP LIC A T IO N S . . •

2SK711

Contextual Info: TOSHIBA 2SK711 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK711 HIGH FREQUENCY AMPLIFIER APPLICATIONS Unit in mm AM HIGH FREQUENCY AMPLIFIER APPLICATIONS + 0.5 2 .5 - 0 . 3 AUDIO FREQUENCY AMPLIFIER APPLICATIONS • High |Yfs| : |Yfs| = 25mS Typ.

2SK2092

Abstract: 2SK209
Contextual Info: 2SK209 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK209 Audio Frequency Low Noise Amplifier Applications • High |Yfs|: |Yfs| = 15 mS typ. at VDS = 10 V, VGS = 0 • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.)

2SJ106

Contextual Info: 2SJ106 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ106 Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications Unit: mm • High breakdown voltage: VGDS = 50 V

2SK208

Abstract: 2SK2082
Contextual Info: 2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

Contextual Info: 2SK711 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK711 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS typ. • Low Ciss: Ciss = 7.5 pF (typ.)

Contextual Info: 2SK368 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK368 Audio Frequency and High Voltage Amplifier Applications Constant Current Applications • High breakdown voltage: VGDS = −100 V min • High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V)

2sk2082

Abstract: condenser microphone 2SK208
Contextual Info: 2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)