2sj111
Abstract: 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ122
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) ID Pd/Pch Tj/Tch min 2SJ101 2SJ102 2SJ103 2SJ104 2SJ105 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 2SJ111 2SJ112 2SJ113 2SJ114 2SJ115 2SJ116 2SJ117 2SJ118
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2sj1012sj1022sj1032sj104+142sj1052sj1062sj1072sj1082sj1092sj1102sj1112sj1312sj1122sj1552sj124transistor 2sj1622sj1132sj122
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DIODE T25 4
Abstract: 2SJ112 DIODE T25 DIODE T25 4 C DIODE T25 4 IO 2SK39A II-60 kos0 DIODE T25 4 lo
Contextual Info: T3 HITACHI/-COPTOELECTRONICS} D E | 4MTtiS0S DQlGOBfl 0 73C 10038 ^7rgrB^TT5 R TTTiU H I / U P I O b L h L I H U N iu t > D 2SK398 S IL IC O N N -C H A N N E L M O S FET HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER C o m p le m e n ta ry pair w ith 2SJ112
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2sj112diode t25 4diode t25diode t25 4 c+5diode t25 4 io2sk39aii-60kos0diode t25 4 lo
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2SK398
Abstract: XSJ112
Contextual Info: 2SJ112 V V 3 > P f - t * JU M P S FET SILIC O M P-CHANNEL MOS F E T HIGH SPEED POW ER SWITCHING HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2 S K 3 9 8 2 S K 3 9 8 t 3 > y ; * > 5» 'J 'N-r SAUL Jtiai if 1• //I * 1\\ 1 ^ z. I _ #40 JE D E C TO-3
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2sk3987a-25xsj112vjf--10v+1--10v
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2Sk398
Abstract: 2SJ112
Contextual Info: HITACHI/-COPTOELECTRONICS} l^ r e r S Y O b "73 DËJ 4 ^ 2 0 5 73C 1 0 0 38 H I T ÆU f f T / O H I U h L h C I H O N 1 T J S T 001D03Ö 0 D 2SK398— S IL IC O N N -C H A N N E L M O S FET HIGH SPEED POWER SWITCHING. HIGH FREQUENCY POWER AMPLIFIER C o m p le m e n ta ry p a ir w ith 2SJ112
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001d032sk398--2sj1122sk398 |
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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stvdst-01cat22stk411-230estk411-220e+8stk442-130pal005aupc2581vfn1016strg6153rsn313h25stk407-070bmcz3001d
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2sk405 2sj115
Abstract: 2SK389 2SK400 2SK385 2SJ109 2SJ112 2SJ114 2SK388 2SK373 2SK370
Contextual Info: - 46 - f M £ tt £ m W l % 3: fe V* & % K V * ft (V) (A) m ft* P d /P c h (W) Ig s s (max) (A) Vg s (V) ft te % te (Ta=25tî) IÇfcU (min) (max) V d s (V) (V) (V) (min) (max) Vd s (A) (A) (V) g m (min) (S) Id (A) Vd s (V) W Id (A) LF HV A, CC N D -100 GDS
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2sk3682sk3692sk3702sk371+132sk3722sk3862sk3872sk38820mvmax2sj1092sk405 2sj1152sk3892sk4002sk3852sj1122sj1142sk373
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2sj111
Abstract: 2SJ131 2SJ112 2SJ110 2SJ122 2SK722 2SJ121 2sj135 2SJ106 2SJ129
Contextual Info: - 18 - §ü % tt € m tit ià ië f f j II =e 1 K 2SJ106 L F A, A - S W 2SJ107 L F A, A ~ S W j fë £ V* V * t* (V) ft * W. X I* ft (A) P d/ Pc h (max) (A) (W) M 4# te (max) (V) Vd s (V) (Ta=25Tï) I gss Vg s (V) (min) (A) (max) V d s (A) (V) (min) (V)
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2sj1062sj1072sj1082sj109+112sj110100kq2sj1292sj1302sk7222sj1312sj1112sj1122sj1222sj1212sj135
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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irf 544 n mosfetspice 2 computer models for hexfets4af2npp irtransistor d586+6induction cooker fault finding circuit diagramstransistor mos fet d482electronics digesttransistor d357 equivalentd515 transistor1rf511
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hitachi mosfet power amplifier audio application
Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56
Contextual Info: APPLICATION NOTE 1-9 Pov/er MOS FET • ' Bo* 3 V•? * ¿ 'S r ^ m is y 701 S ! Reo N o 64 1688 07 P O BO X 1194. R A N D tíU R G , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 7 8 9 1 4 0 0 /2 T E L E X 4 -2 0 4 5 2 F A X 1 0 1 1 )7 8 7 0 2 6 3
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re79-24hitachi mosfet power amplifier audio application2sk215 equivalentpm4550c+72sd667 2sb6472sd667 equivalent2sj99k429hitachi 2sj56k399hitachi 2sk176 2sj56
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2SJ112
Abstract: diode t25 4 G6 K650 2SK398 Hitachi 2SJ HITACHI 2SJ* TO-3 HITACHI 2SK* TO-3 T3F3
Contextual Info: HITACHI/-COPTOELECTRONICS} 73 73C 09948 — T p f ü B T t r e ^ H I T A O H I / .UH I O t L b ü I R U Ñ i O S 2 S J T I 2 D e 1 m 42¿BD5 OOCHTMÜ □ D T-3f-^3 - — S ILIC O N P -C H A N N EL M O S FET HIGH SPEED POWER SW ITCHING,
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2sk3982sj112-2sj112diode t25 4 g6+5k650hitachi 2sjhitachi 2sj* to-3hitachi 2sk* to-3t3f3
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59
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2SJ112
Abstract: 2SJ112-TYPIC j112 fet
Contextual Info: H I T A C H I / í O P T OE LE CT RO NI C S} 73 HITACHI ! .DP IÖLLEC IKUN ICS DE.[LlLllit3SD5 P O D ^ a □ 73C 09948 D • z 3 2S J112 SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair w ith 2SK 398
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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cb-f36c2sd16422sd21822sc4489+11-08s-ksd 302 250v, 10airf 5630transistor 2sb 367irf 3055ac153ytransistor esm 2878tip 43c transistor2sk116bf199bd643
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HA 12058
Abstract: HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P
Contextual Info: HITACHI QUICK REFERENCE GUIDE TO INTEGRATED CIRCUITS AND DISCRETE SEMICONDDCTOR DEVICES PREFERRED EUROPEAN TYPE-SELECTION P.O. Box 56310, Pinegowrie 2123 nn i ^ fïü n n UDüü E B E « EBE HMffll M K MI §03* M H M B I1 2 1 » PREFERRED EUROPEAN TYPE-SELECTION
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hd25/hdhmcs40hl8314ehl8312+16hl8311hlp1000hl7802hl7801hl1221hlp5000ha 12058ha12047ha12038ha1205817812pha 12046ha12026ha1204517815p17808p
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