2SA102 Search Results

Contextual Info: Product specification 2SA1022 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 High transition frequency fT. 0.4 3 Features 1 0.55 Mini type package,allowing downsizing of the equipment and automatic 2 insertion through the tape packing and the magazine packing.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications.  FEATURES *Low collector saturation voltage: VCE SAT =-0.5V(MAX) (IC=-1A)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1022 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2295 Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 0.16+0.10 –0.06

2SA1020

Contextual Info: ST 2SA1020 PNP Silicon Epitaxial Transistor Power amplifier application Power switching application 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage

2SA1022

Abstract: 2SC2295
Contextual Info: Transistor 2SA1022 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2295 1.9±0.1 Ta=25˚C Unit Collector to base voltage VCBO –30 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –5 V Collector current

2sc2655

Abstract: equivalent 2SC2655 2SA1020
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2655 TRANSISTOR NPN TO-92MOD FEATURES z Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) z High speed switching time: tstg=1 s(Typ.) z Complementary to 2SA1020

Contextual Info: MCC TM Micro Commercial Components 2SA1020-O 2SA1020-Y
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • Halogen free available upon request by adding suffix "-HF"

2SA1024

Contextual Info: ST 2SA1024 PNP Silicon Epitaxial Planar Transistor for high voltage applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Hitachi DSA002754

Contextual Info: 2SC2396, 2SC2543, 2SC2544 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SA1025, 2SA1081 and 2SA1082 Outline 2SC2396, 2SC2543, 2SC2544 Absolute Maximum Ratings Ta = 25°C Item Symbol 2SC2396 2SC2543 2SC2544 Unit

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA1020 TO-92MOD TRANSISTOR PNP FEATURES Power Amplifier Applications 1. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2. COLLECTOR Symbol 3. BASE Parameter

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1022 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2295 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 (0.95) (0.95)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2295 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1022 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1

2SA1022

Abstract: 2SC2295
Contextual Info: Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1022 Unit: mm +0.2 2.8 –0.3 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 +0.2 ● 2.9 –0.05 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT.

pnp transistor a1020

Abstract: transistor 2SA1020 transistor a1020 2SA1020 2SC2655 A1020 A1020 transistor
Contextual Info: 2SA1020 TO SH IBA 2 S A 1 020 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS Unit in mm 5.1 MAX • • • Low Collector Saturation Voltage : VCE(sat)“ —0.5V (Max.) (IC= -1 A )

2SC2655

Abstract: transistor 2SC2655 IC 1730 2sc2655 y TO-92MOD transistor ic1A
Contextual Info: 2SC2655 TO-92MOD Transistor NPN TO-92MOD 1.EMITTER 1 2 3 5.800 6.200 2.COLLECTOR 3.BASE 8.400 8.800 Features — 0.900 1.100 0.400 0.600 Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) High speed switching time: tstg=1 s(Typ.) Complementary to 2SA1020

2SC2655

Abstract: transistor 2SC2655 TO-92L transistor ic1A to92l 2SC2655 Y IC 7800 2sC2655 NPN Transistor transistor 7800 TO 92L NPN Transistor
Contextual Info: 2SC2655 TO-92L Transistor NPN TO-92L 1.EMITTER 4.700 5.100 2.COLLECTOR 7.800 8.200 3.BASE Features — 1 2 3 0.600 0.800 Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) High speed switching time: tstg=1 s(Typ.) Complementary to 2SA1020 — — 0.350 0.550

2SA1020

Abstract: pnp transistor 2sa1020
Contextual Info: 2SA1020 TO-92MOD Transistor PNP TO-92MOD 5.800 6.200 1. EMITTER 1 2 3 2. COLLECTOR 8.400 8.800 3. BASE 0.900 1.100 Features 0.400 0.600 Power amplifier applications 13.800 14.200 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units

2SA1022

Abstract: 2SC2295
Contextual Info: Transistors 2SC2295 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1022 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 0.95 (0.95) 1.9±0.1 (0.65) • Optimum for RF amplification of FM/AM radios • High transition frequency fT

2sc2543

Abstract: 2SA1025
Contextual Info: 2SC2396,2SC2543,2SC2544 Silicon NPN Epitaxial HITACHI Application • Low frequency amplifier • Complementary pair with 2SA1025, 2SA1081 and 2SA1082 Outline TO-92 1 h \ IP 1. Emitter 2. Collector 3. Base I 3 2 376 1 2SC2396,2SC2543, 2SC2544 Absolute Maximum Ratings (Ta = 25°C)

2SC2S45

Abstract: 2SA1025 2SA108
Contextual Info: HITACHI 2SC2396, 2SC2543, 2SC2544 'S SiUCON NPN ePtTAXIAt LOW FREQUENCY AMPLIFIER Compìiwnontary p<nr with 2SA1025, 2SA108-. and 2SA1082 r~ r Î » A -Í.; It o * ^ JEOeC TO-92 I ABSOLUTE MAXIMUM RATINGS iTj 2 r C } I setu Symby". MAXIMUM COLLECTOR DISSIPATION

2SC2308

Abstract: 2sc458 2sc458 transistor 2SA1029 2SA1030 2SC2310 Hitachi DSA00395
Contextual Info: 2SC458, 2SC2308 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SA1029 and 2SA1030 Outline TO-92 1 1. Emitter 2. Collector 3. Base 3 2 1 2SC458, 2SC2308 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SC458 2SC2308

2SA1021

Contextual Info: AOK AOK Semiconductor Product Specification 2SA1021 Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • High breakdown voltage • Large current capacity APPLICATIONS • For color TV sound output;converters Inverters applications PINNING

2SA1020

Abstract: 2SC2655 2sc2655 SOT
Contextual Info: UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1020 is designed for power amplifier and 1 power switching applications. FEATURES *Low collector saturation voltage: VCE sat =-0.5V(max.) (IC=-1A) *High speed switching time: tstg=1.0µs(Typ.)

pnp transistor a1020

Abstract: A1020 transistor A1020 Y transistor a1020 a1020 pnp transistor A1020 Y pnp 2SA1020 toshiba marking code transistor 2sc2655 A1020 2SC2655
Contextual Info: 2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1020 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 s (typ.)