2SK378 Search Results

TF-2502

Contextual Info: 2SK3784-01 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220AB Applications Switching regulators DC-DC converters

2SK3789-01R

Abstract: 12/24 v dc-dc converter schematic
Contextual Info: 2SK3789-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters

nec k 1006

Abstract: nec 1006 2SK3783 2SK378
Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3783 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3783 is suitable for converter of ECM. 1.0 0.6 FEATURES • High gain −0.5 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ)

2SK3781-01R

Contextual Info: 2SK3781-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters

2SK3789-01R

Abstract: 2SK378
Contextual Info: 2SK3789-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters

Contextual Info: 2SK3787-01MR 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220F Applications Switching regulators

2SK3785-01MR

Abstract: mosfet 10a 800v MOSFET 800V 10A mosfet 10a 800v high power TF-2502
Contextual Info: 2SK3785-01MR 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Features Outline Drawings [mm] High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220F Applications Switching regulators

2SK3780-01

Contextual Info: 2SK3780-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply)

2SK3780-01

Abstract: power supply 100v 30a schematic
Contextual Info: 2SK3780-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breadown Applications Switching regulators UPS (Uninterruptible Power Supply)

2SK3788-01

Contextual Info: 2SK3788-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breadown Applications Switching regulators UPS (Uninterruptible Power Supply)

2SK3782

Abstract: D17001 NEC PART NUMBER MARKING
Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3782 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3782 is suitable for converter of ECM. 1.2 ±0.1 +0.1 0.3 –0.05 MAX. 0.33

2SK3783

Abstract: V401200
Contextual Info: データ・シート 接合形電界効果トランジスタ Junction Field Effect Transistor 2SK3783 N チャネル接合形シリコン電界効果トランジスタ ECM インピーダンス変換用 外形図（単位：mm） 2SK3783 は，ゲート - ソース間にダイオードと高抵抗を内

2SK3788-01

Contextual Info: 2SK3788-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply)

48v to 5v dc schematic

Abstract: 2SK3781-01R
Contextual Info: 2SK3781-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SK3782

Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

2sk405 2sj115

Abstract: 2SK389 2SK400 2SK385 2SJ109 2SJ112 2SJ114 2SK388 2SK373 2SK370
Contextual Info: - 46 - f M £ tt £ m W l % 3: fe V* & % K V * ft (V) (A) m ft* P d /P c h (W) Ig s s (max) (A) Vg s (V) ft te % te (Ta=25tî) IÇfcU (min) (max) V d s (V) (V) (V) (min) (max) Vd s (A) (A) (V) g m (min) (S) Id (A) Vd s (V) W Id (A) LF HV A, CC N D -100 GDS

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

JFET ecm

Abstract: N1475 rs630 2SK3717 2SK3718 2SK3719 2SK3782 2SK3783 2SK4027 2SK4028
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

an6512n

Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
Contextual Info: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.

fmh*23N50E

Abstract: FMH23N50E N-channel MOSFET to-247 fmv23n50e ic 2535 fmh23n50 FGW40N120HD FMV20N60S1 FMW30N60S1HF FMW20N60S1HF
Contextual Info: 1959-2012:QuarkCatalogTempNew 9/11/12 9:05 AM Page 1959 25 Diodes, IGBTs and MOSFETs Features: ᭤ Low VF ᭤ Super High Speed Switching ᭤ High Reliability By Planer Design ø2.5 Application: ᭤ High Speed Switching ᭤ Ultra Small Package, Possible for

2SK3783

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2sk4005

Abstract: 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2SK314 2SK315 2SK316 2SK317 2SK318 2SK319 2SK320 2SK321