2SK303 Search Results
2SK303 Datasheets (38)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| 2SK303 | Kexin | N-Channel Junction Silicon FET | Original | 37.41KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK303 | Sanyo Semiconductor | General-purpose amplifiers, impedance converters | Original | 101.37KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK303 | TY Semiconductor | N-Channel Junction Silicon FET - SOT-23 | Original | 88.87KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK303 | Unknown | Shortform Transistor PDF Datasheet | Short Form | 155.95KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK303 | Unknown | General Purpose Transistors | Scan | 73.41KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK303 | Unknown | Scan | 88.77KB | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK303 | Unknown | SMD, Silicon N-Channel JFET | Scan | 88.77KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK303 | Unknown | FET Data Book | Scan | 92.11KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK303 | Sanyo Semiconductor | Sanyo Datasheets, Cross References and Circuit Examples | Scan | 57.13KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK303 | Sanyo Semiconductor | Small Signal Junction FETS / MOSFETS | Scan | 488.64KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK303 | Sanyo Semiconductor | CP Type Transistors | Scan | 79.52KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK303 | Sanyo Semiconductor | Small Signal FETs | Scan | 168.31KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3030 |
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Silicon N-Channel Power F-MOS FET | Original | 23.43KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3030 |
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N-Channel Power F-MOS FET | Original | 33.67KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3030 |
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Silicon N-Channel Power MOSFET | Original | 55.49KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK303000L |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 8A UG-1 | Original | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3031 | Kexin | N-Channel Power F-MOSFET | Original | 44.74KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3031 |
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N-Channel Power F-MOS FET | Original | 33.69KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3031 |
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Silicon N-Channel Power F-MOS FET | Original | 23.46KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3031 |
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Silicon N-Channel Power MOSFET | Original | 55.62KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK303 Price and Stock
onsemi 2SK303-3-TB-E2SK303-3-TB-E |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SK303-3-TB-E | 14,321 | 1,521 |
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Buy Now | ||||||
| 2SK303-3-TB-E | 3,000 | 1,521 |
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Buy Now | |||||||
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2SK303-3-TB-E | 17,321 | 1 |
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Buy Now | ||||||
SANYO Semiconductor Co Ltd 2SK303V3TAElectronic Component |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SK303V3TA | 3,985 |
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Get Quote | |||||||
2SK303 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
2SK303V4
Abstract: 2SK303V3 2sK303L 2SK303
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Original |
2sk3032sk303l-x-ae3-r2sk303g-x-ae3-rot-23+8 | |
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Contextual Info: Power F-MOS FETs 2SK3036 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage |
Original |
2sk3036 | |
2SK3034Contextual Info: Power F-MOS FETs 2SK3034 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage |
Original |
2sk3034 | |
5A diode
Abstract: 2SK3037
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Original |
2sk30375a diode | |
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Contextual Info: Power F-MOS FETs 2SK3032 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage |
Original |
2sk3032 | |
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Contextual Info: Power F-MOS FETs 2SK3035 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage unit: mm |
Original |
2sk3035 | |
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Contextual Info: Power F-MOS FETs 2SK3037 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage |
Original |
2sk3037 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SK303 JFET LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS FEATURES * Ideal For Potentiometers * Analog Switches * Low Frequency Amplifiers * Constant Current Supplies * Impedance Conversion ORDERING INFORMATION Ordering Number |
Original |
2sk3032sk303l-x-ae3-r2sk303g-x-ae3-rot-23+6 | |
2SK3033Contextual Info: Power F-MOS FETs 2SK3033 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage |
Original |
2sk3033 | |
2SK3030Contextual Info: Power F-MOS FETs 2SK3030 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage |
Original |
2sk3030 | |
2SK3032Contextual Info: Power F-MOS FETs 2SK3032 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage |
Original |
2sk3032 | |
K3030
Abstract: 2SK3030
|
Original |
2002/95/ec2sk3030sc-63k3030 | |
2SK3036Contextual Info: Power F-MOS FETs 2SK3036 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage |
Original |
2sk3036 | |
2SK303Contextual Info: Ordering num ber:E N 856F ^ ¡ f N0.856F £ * j|ïjjf / 2SK303 II 1 N-Channel Junction Silicon FET // Low-Frequency II General-Purpose Amp Applications Features • Ideal for potentiometers, analog switches, low frequency amplifiers, constant current supplies, and |
OCR Scan |
en856f2sk303 | |
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4A diode
Abstract: 2SK3030
|
Original |
2sk30304a diode | |
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Contextual Info: Power F-MOS FETs 2SK3037 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage |
Original |
2sk3037 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SK303 JFET LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS FEATURES * Ideal For Potentiometers * Analog Switches * Low Frequency Amplifiers * Constant Current Supplies * Impedance Conversion ORDERING INFORMATION |
Original |
2sk3032sk303g-xx-ae3-r2sk303g-xx-a3c-r2sk303g-xx-aq3-r+6 | |
2SK303LContextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SK303 JFET LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS FEATURES * Ideal For Potentiometers * Analog Switches * Low Frequency Amplifiers * Constant Current Supplies * Impedance Conversion ORDERING INFORMATION Ordering Number |
Original |
2sk3032sk303l-x-ae3-r2sk303g-x-ae3-rot-23+7 | |
2SK3036Contextual Info: Power F-MOS FETs 2SK3036 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage |
Original |
2sk3036 | |
K3031
Abstract: 2SK3031
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Original |
2002/95/ec2sk3031sc-63k3031 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3031 Silicon N-channel power MOSFET • Features Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 Unit V V A A mJ W 2 (5.5) 1 Parameter Symbol Rating Drain-source surrender voltage VDSS 100 |
Original |
2002/95/ec2sk3031sc-63k3031 | |
2SK3031Contextual Info: Power F-MOS FETs 2SK3031 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage |
Original |
2sk3031 | |
2SK3034Contextual Info: Power F-MOS FETs 2SK3034 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage |
Original |
2sk3034 | |
2SK3036Contextual Info: Power F-MOS FETs 2SK3036 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage unit: mm |
Original |
2sk3036 | |