2SK3031 Search Results

K3031

Abstract: 2SK3031
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3031 Silicon N-channel power MOSFET • Features Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 0.5±0.1 0.8 max. 1.8±0.1 0.75±0.1 2.3±0.1 4.6±0.1 1 ■ Absolute Maximum Ratings TC = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3031 Silicon N-channel power MOSFET • Features Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 Unit V V A A mJ W 2 (5.5) 1 Parameter Symbol Rating Drain-source surrender voltage VDSS 100

2SK3031

Contextual Info: Power F-MOS FETs 2SK3031 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage

K3031

Abstract: power mosfet low vgs 2SK3031
Contextual Info: Power MOSFETs 2SK3031 Silicon N-channel power MOSFET • Features Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 1 2 5.3 (4.35) (3.0) 3 (5.5) 0.75±0.1 2.3±0.1 4.6±0.1 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st

8a smd

Abstract: 2SK3031
Contextual Info: IC MOSFET SMD Type Silicon N-Channel Power F-MOSFET 2SK3031 Features TO-252 Avalanche energy capacity guaranteed High-speed switching Low ON-resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80

Contextual Info: IC MOSFET SMD Type Product specification 2SK3031 Features TO-252 Avalanche energy capacity guaranteed High-speed switching Low ON-resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15

K3031

Abstract: 2SK3031
Contextual Info: Power MOSFETs 2SK3031 Silicon N-channel power MOSFET • Features Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 • Non-contact relay • Solenoid drive • Motor drive • Control equipment • Switching mode regulator 0.8 max. 1.0±0.1 0.1±0.05 0.5±0.1 0.75±0.1

2SK3031

Abstract: 8a diode
Contextual Info: Power F-MOS FETs 2SK3031 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

k3025

Abstract: K3192 k3047 K2538 k2960 K2923 K3035 K3165 K3028 k2576
Contextual Info: GaAs MMIC Microwave Monolithic IC # For Amplifiers U /V CATV Wide Band Amp. Buffer Amp. Type No. NF (dB) PG (dB) Measuring Condition Circuit Configuration O .—. > ^ Application (mA) GN1010 2.0 9 3 25 100 to 2000 GN1042 2.2 10 3 40 50 to 800 GN1044 1.8

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

ON3105

Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
Contextual Info: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S