2SK317 Search Results

2SK317 Datasheets (24)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SK317	Hitachi Semiconductor	Silicon N-Channel MOS FET, HF / VHF Power Amplifier	Scan	PDF	74.67KB	2
2SK317	Hitachi Semiconductor	Power Transistors Data Book	Scan	PDF	127.11KB	1
2SK317	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF	42.68KB	1
2SK317	Unknown	FET Data Book	Scan	PDF	92.11KB	2
2SK317	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	81.62KB	1
2SK317	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	78KB	1
2SK317	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	59.81KB	1
2SK3174A	Hitachi Semiconductor	Silicon N Channel MOS FET	Original	PDF	84.12KB	8
2SK3174A	Renesas Technology	Silicon N Channel MOS FET UHF Power Amplifier	Original	PDF	106.24KB	10
2SK3175A	Hitachi Semiconductor	Silicon N Channel MOS FET	Original	PDF	81.47KB	8
2SK3175A	Renesas Technology	Silicon N Channel MOS FET UHF Power Amplifier	Original	PDF	101.72KB	10
2SK3176	Toshiba		Original	PDF	44.05KB	9
2SK3176	Toshiba	FETs - Nch 150V	Original	PDF	160.59KB	6
2SK3176	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67

2SK3176	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF	1.45MB	45
2SK3176	Toshiba	Silicon N-channel MOS type field effect transistor for high speed, high voltage switching, switching regulator, DC-DC converter & motor drive applications	Scan	PDF	298.35KB	5
2SK3176(F)	Toshiba	2SK3176 - MOSFET N-CH 200V 30A 2-16C1B	Original	PDF	179.31KB	6
2SK3176(F)	Toshiba	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 30A TO-3PN	Original	PDF		2
2SK3176PBF	Toshiba	2SK3176 - TRANSISTOR 30 A, 200 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-16C1B, SC-65, 3 PIN, FET General Purpose Power	Original	PDF	179.31KB	6
2SK3177	Renesas Technology	Silicon N Channel MOS FET High Speed Power Switching	Original	PDF	53.99KB	9

2SK317 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SK3176 Abstract: SC-65 Contextual Info: TOSHIBA 2SK3176 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2 S K 3 1 76 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm	OCR Scan	2SK3176 2SK3176 SC-65	PDF
Contextual Info: T O SH IB A 2SK3179 TOSHIBA FIELD EFFECT TRANSISTOR m— GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE t # • m t m m U H F-SH F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure • High Gain MAXIMUM RATINGS Ta = 25°C SYMBOL CHARACTERISTIC	OCR Scan	2SK3179 Admitt510	PDF
k3176 Abstract: 2SK3176 SC-65 25c512 Contextual Info: 2SK3176 東芝電界効果トランジスタシリコンNチャネルMOS形 π-MOSV 2SK3176 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : \|Yfs\| = 30 S (標準)	Original	2SK3176 2-16C1B SC-65 k3176 2SK3176 SC-65 25c512	PDF
2SK3176 Abstract: SC-65 Contextual Info: TOSHIBA 2SK3176 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2 S K 3 1 76 SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Unit in mm j 1 • Low Drain-Source ON Resistance • High Forward Transfer Admittance : \|Yfs\| = 30 S (Typ.)	OCR Scan	2SK3176 2SK3176 SC-65	PDF
2SK3175A Abstract: rfpak DSA003640 Hitachi DSA003640 Contextual Info: 2SK3175A Silicon N Channel MOS FET UHF Power Amplifier ADE-208-1452 Z 1st. Edition September 2001 Features • High power output, High gain, High efficiency P1dB = 110 W, PG = 16.0 dB, ηD = 60 % (at P1dB) typ. (f = 860MHz) • Compact package Outline RFPAK-G	Original	2SK3175A ADE-208-1452 860MHz) D-85622 D-85619 2SK3175A rfpak DSA003640 Hitachi DSA003640	PDF
Contextual Info: TOSHIBA 2SK3176 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2 S K 3 1 76 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 15.9 M A X .	OCR Scan	2SK3176	PDF
2SK317 Abstract: HF VHF power amplifier 2sk317 hitachi k317 Contextual Info: • 2SK317 4 4 ^ 2 0 5 0013033 472 ■ H I T 4 HITACHI/ OPTOELECTRONICS blE lT SILICON N-CHANNEL MOS FET HF/VHF POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. Gate is Protected by Zenner Diodes. No Secondary-Breakdown.	OCR Scan	2SK317 100MHz; I75MH> 2SK317 HF VHF power amplifier 2sk317 hitachi k317	PDF
Contextual Info: T O S H IB A 2SK3176 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2 S K 3 1 76 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1 Í Q MAY	OCR Scan	2SK3176	PDF
Contextual Info: TO SH IBA 2SK3176 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2 S K 3 1 76 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS	OCR Scan	2SK3176	PDF
2sk3174 Abstract: 2SK3174A DSA003640 Contextual Info: 2SK3174A Silicon N Channel MOS FET UHF Power Amplifier ADE-208-1451 Z 1st. Edition September 2001 Features • High power output, High gain, High efficiency P1dB = 220 W , PG = 15.3dB , ηD = 61 % (at P1dB) typ. (f = 860MHz) • Compact package Suitable for push - pull circuit	Original	2SK3174A ADE-208-1451 860MHz) D-85622 D-85619 2sk3174 2SK3174A DSA003640	PDF
2SK3177 Abstract: Hitachi DSA00276 Contextual Info: 2SK3177 Silicon N Channel MOS FET High Speed Power Switching ADE-208-745A Z 2nd. Edition Feb. 1999 Features • Low on-resistance R DS =90mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220FM D G 1 2	Original	2SK3177 ADE-208-745A 220FM D-85622 2SK3177 Hitachi DSA00276	PDF
2sk4005 Abstract: 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354 Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2SK314 2SK315 2SK316 2SK317 2SK318 2SK319 2SK320 2SK321	Original	2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2sk4005 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354	PDF
512ID Abstract: 2SK3176 SC-65 k3176 Contextual Info: 2SK3176 東芝電界効果トランジスタシリコンNチャネルMOS形 π-MOSV 2SK3176 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : \|Yfs\| = 30 S (標準)	Original	2SK3176 2-16C1B SC-65 512ID 2SK3176 SC-65 k3176	PDF
k3176 Abstract: 2SK3176 SC-65 Contextual Info: 2SK3176 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS V 2SK3176 Switching Regulator, DC-DC Converter and Motor Drive Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 30 S (typ.)	Original	2SK3176 k3176 2SK3176 SC-65	PDF

2SK317 Abstract: zenner 10v 2sk317 hitachi Contextual Info: • 2SK317 HM'ìtSQS 0013033 47S ■ H I T 4 HI TA G H I / OPTOELECTRONICS LIE lT SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • • High Breakdown Voltage. You Can Decrease Handling Current. • Gate is Protected by Zenner Diodes.	OCR Scan	2SK317 D013Q3M zenner 10v 2sk317 hitachi	PDF
313-105 Abstract: 2SK3179 ET 8211 0737 8178 0.514 740 1025 5688 el 7406 Contextual Info: TOSHIBA 2SK3179 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2 S K 3 1 79 UHF-SHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure • High Gain MAXIMUM RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Gate-Drain Voltage	OCR Scan	2SK3179 SYM57 313-105 2SK3179 ET 8211 0737 8178 0.514 740 1025 5688 el 7406	PDF
2SK3176 Abstract: SC-65 Contextual Info: T O S H IB A 2SK3176 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2 S K 3 1 76 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS •	OCR Scan	2SK3176 2SK3176 SC-65	PDF
2SK3177 Abstract: Hitachi DSA00239 Contextual Info: 2SK3177 Silicon N Channel MOS FET High Speed Power Switching ADE-208-745A Z 2nd. Edition February 1999 Features • Low on-resistance R DS = 90 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM	Original	2SK3177 ADE-208-745A 220FM 2SK3177 Hitachi DSA00239	PDF
k3176 Abstract: 2SK3176 SC-65 Contextual Info: 2SK3176 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS V 2SK3176 Switching Regulator, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 30 S (typ.)	Original	2SK3176 k3176 2SK3176 SC-65	PDF
2SK3177 Abstract: 2SK3177-E PRSS0003AD-A 2SK317 Contextual Info: 2SK3177 Silicon N Channel MOS FET High Speed Power Switching REJ03G1089-0300 Previous: ADE-208-745A Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS =90mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline	Original	2SK3177 REJ03G1089-0300 ADE-208-745A) PRSS0003AD-A O-220FM) 2SK3177 2SK3177-E PRSS0003AD-A 2SK317	PDF
5252 F 1009 4-pin Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025 Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4	Original		PDF
2sc5929 Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE	PDF
2SK2056 Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078 Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1	Original	BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078	PDF
fqp60n06 Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier	Original	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640	PDF

2SK317 Search Results

2SK317 Datasheets (24)

2SK317 Datasheets Context Search

2SK3176

k3176

2SK3176

2SK3175A

2SK317

2sk3174

2SK3177

2sk4005

512ID

k3176

2SK317

313-105

2SK3176

2SK3177

k3176

2SK3177

5252 F 1009 4-pin

2sc5929

2SK2056

fqp60n06