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    2SK339 Search Results

    2SK339 Datasheets (22)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SK339
    		Unknown Semiconductor Master Cross Reference Guide Scan PDF 121.94KB 1
    2SK339
    		Unknown Semiconductor Master Cross Reference Guide Scan PDF 118.12KB 1
    2SK3390
    		Hitachi Semiconductor Silicon N Channel MOS FET Original PDF 78.36KB 7
    2SK3390
    		Renesas Technology Silicon N Channel MOS FET UHF Power Amplifier Original PDF 99.13KB 9
    2SK3390
    		Renesas Technology Silicon N-Channel MOS FET UHF Power Amplifier Original PDF 90.49KB 10
    2SK3391
    		Hitachi Semiconductor Silicon N Channel MOS FET Original PDF 76.94KB 7
    2SK3391
    		Renesas Technology Silicon N-Channel MOS FET UHF Power Amplifier Original PDF 147.61KB 10
    2SK3391
    		Renesas Technology Silicon N-Channel MOS FET UHF Power Amplifier Original PDF 60.06KB 5
    2SK3391
    		Renesas Technology Silicon N Channel MOS FET UHF Power Amplifier Original PDF 97.66KB 9
    2SK3391JX
    		Renesas Technology Original PDF 60.06KB 5
    2SK3391JXTL
    		Renesas Technology RF FETs, Discrete Semiconductor Products, MOSFET N-CH 17V 300MA UPAK Original PDF 12
    2SK3391JXTL-E
    		Renesas Technology Silicon N-Channel MOS FET UHF Power Amplifier Original PDF 147.62KB 10
    2SK3396
    		Panasonic FETs, IPD, IGBTs, GaAs MMICs Original PDF 34.02KB 1
    2SK3396
    		Panasonic Silicon N-Channel Junction FET Original PDF 68.6KB 3
    2SK3397
    		Toshiba MOSFETs - Nch VDSS=30V; Surface Mount Type: N; Package: TFP; R DS On (max 0.006); I_S (A): (max 70) Original PDF 203.32KB 6
    2SK3397
    		Toshiba Field Effect Transistor Silicon N Channel MOS Type (U-MOS) Original PDF 96.78KB 3
    2SK3397
    		Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF 1.45MB 45
    2SK3398
    		Toshiba Switching Regulator and DC-DC Converter Applications and Motor Drive Applications Original PDF 223.99KB 6
    2SK3398
    		Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF 1.45MB 45
    2SK3399
    		Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF 1.45MB 45
    SF Impression Pixel

    2SK339 Price and Stock

    Select Manufacturer

    Rochester Electronics LLC 2SK3391JX

    RF MOSFET 13.7V UPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3391JX Bulk 91
    • 1 -
    • 10 -
    • 100 $3.32
    • 1000 $3.32
    • 10000 $3.32
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    Renesas Electronics Corporation 2SK3391JX

    Trans RF MOSFET N-CH 17V 0.3A 4-Pin(3+Tab) UPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SK3391JX 134,013 95
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    • 100 $3.79
    • 1000 $3.39
    • 10000 $3.19
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    Rochester Electronics 2SK3391JX 134,013 1
    • 1 -
    • 10 -
    • 100 $3.03
    • 1000 $2.71
    • 10000 $2.55
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    Toshiba America Electronic Components 2SK3399(Q)

    Trans MOSFET N-CH Si 600V 10A 3-Pin(3+Tab)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SK3399(Q) 50 50
    • 1 -
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    • 100 $1.45
    • 1000 $1.45
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    Quest Components 2SK3399(Q) 40
    • 1 $3.90
    • 10 $2.44
    • 100 $2.15
    • 1000 $2.15
    • 10000 $2.15
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    Renesas Electronics Corporation 2SK3390IX

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2SK3390IX 5,681 2
    • 1 -
    • 10 $2.25
    • 100 $1.13
    • 1000 $0.99
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    Quest Components () 2SK3390IX 4,544
    • 1 $4.00
    • 10 $4.00
    • 100 $4.00
    • 1000 $1.10
    • 10000 $1.10
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    2SK3390IX 4,544
    • 1 $3.60
    • 10 $3.60
    • 100 $3.60
    • 1000 $1.98
    • 10000 $1.80
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    Renesas Electronics Corporation 2SK3390IXTB-E

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2SK3390IXTB-E 927
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    2SK339 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 2SK3390 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0208-0400 Rev.4.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd = 60% min. f = 836 MHz • Compact package capable of surface mounting


    Original     		2SK3390 REJ03G0208-0400 PLSS0003ZA-A PDF

    Contextual Info: 2SK3391 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0209-0300 Rev.3.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. f = 836 MHz • Compact package capable of surface mounting


    Original     		2SK3391 REJ03G0209-0300 PLZZ0004CA-A PDF

    2SK3398

    Contextual Info: 2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3398 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.0 S (typ.)


    Original     		2SK3398 2SK3398 PDF

    Contextual Info: 2SK3397 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U -M O S H 2SK3397 TENTATIVE RELAY DRIVE AND DC-DC CONVERTER APPLICATIONS UNIT : mm MOTOR DRIVE APPLICATIONS ' 4, h H • Low Drain - Source ON Resistance: R d s (ON) = 4.0 mQ ( Typ.)


    OCR Scan     		2SK3397 PDF

    k3397

    Abstract: k339 2SK3397
    Contextual Info: 2SK3397 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅡ 2SK3397 Relay Drive and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: Yfs = 110 S (typ.)


    Original     		2SK3397 k3397 k339 2SK3397 PDF

    2SK3399

    Abstract: K3399 HC marking
    Contextual Info: TOSHIBA 2SK3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type jc-MOSV TE N TA TIVE 2SK3399 Switching Regulator Applications • • • • Unit in mm Low drain-source ON resistance? RDS (ON) = 0.54 iî (typ) High forward transfer admittance? lYfel = 5.2 S (typ)


    OCR Scan     		2SK3399 2SK3399 K3399 HC marking PDF

    K339

    Contextual Info: 2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3398 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.0 S (typ.)


    Original     		2SK3398 to150 K339 PDF

    2SK3390IXTB-E

    Contextual Info: 2SK3390 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0208-0400 Rev.4.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd = 60% min. f = 836 MHz • Compact package capable of surface mounting


    Original     		2SK3390 REJ03G0208-0400 PLSS0003ZA-A 2SK3390IXTB-E PDF

    Contextual Info: 2SK3397 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3397 Relay Drive and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 110 S (typ.)


    Original     		2SK3397 PDF

    2SK3391

    Abstract: 2SK3391JX
    Contextual Info: 2SK3391 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0209-0200Z Previous ADE-208-847 (Z Rev.2.00 Apr.14.2004 Features • High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. (f = 836 MHz) • Compact package capable of surface mounting


    Original     		2SK3391 REJ03G0209-0200Z ADE-208-847 2SK3391 2SK3391JX PDF

    2SK3391

    Abstract: 2SK3391JXTL-E on 543 upak 319 0048 0 00 440
    Contextual Info: 2SK3391 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0209-0300 Rev.3.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. f = 836 MHz • Compact package capable of surface mounting


    Original     		2SK3391 REJ03G0209-0300 PLZZ0004CA-A 2SK3391 2SK3391JXTL-E on 543 upak 319 0048 0 00 440 PDF

    2SK339

    Abstract: T460
    Contextual Info: NEC j M O S F ie ld E ffe ct T ra n s is to r A r x 2SK339 ‘y * • > High Speed, High Current Switching Industrial Use 2 S K 3391Ì, / J ^ i — V Y '< 'yò-— j > U — X '- W-MB Unit : mm) 10.6 MAX. y>~f, v^^ ¿s^>, S J l ^ D C — DC n K 7 'f ''s FET


    OCR Scan     		2SK339 2SK339 T460 PDF

    Contextual Info: 2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3398 Switching Regulator and DC-DC Converter Applications and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.0 S (typ.)


    Original     		2SK3398 to150 PDF

    2SK3396

    Contextual Info: Silicon Junction FETs Small Signal 2SK3396 Silicon N-Channel Junction FET Unit: mm For impedance conversion in low frequency For infrared sensor 0.10+0.05 –0.02 0.33+0.05 –0.02 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 Rating Unit VGDO −40 V Gate-source voltage (Drain open)


    Original     		2SK3396 2SK3396 PDF

    Contextual Info: 2SK3397 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3397 Relay Drive and DC-DC Converter Applications Motor Drive Applications z Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) z High forward transfer admittance: |Yfs| = 110 S (typ.)


    Original     		2SK3397 to150 PDF

    K3398

    Abstract: 2SK3398 K339
    Contextual Info: 2SK3398 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSV 2SK3398 ○ レギュレータ用､照明用 • 単位: mm : RDS (ON) = 0.4 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 9.0 S (標準)


    Original     		2SK3398 K3398 2SK3398 K339 PDF

    2SK3399

    Abstract: K3399 k339
    Contextual Info: 2SK3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3399 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ) · High forward transfer admittance: |Yfs| = 5.2 S (typ) · Low leakage current: IDSS = 100 µA (max) (VDSS = 600 V)


    Original     		2SK3399 2SK3399 K3399 k339 PDF

    2SK3391

    Abstract: DSA003644
    Contextual Info: 2SK3391 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-847 Z 1st. Edition Aug. 2001 Features • High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, ηadd= 58 % min. (f = 836 MHz) • Compact package capable of surface mounting


    Original     		2SK3391 ADE-208-847 D-85622 D-85619 2SK3391 DSA003644 PDF

    2SK3397

    Abstract: k3397
    Contextual Info: 2SK3397 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3397 Relay Drive and DC-DC Converter Applications Motor Drive Applications z Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) z High forward transfer admittance: |Yfs| = 110 S (typ.)


    Original     		2SK3397 2SK3397 k3397 PDF

    2SK3398

    Contextual Info: 2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3398 Switching Regulator and DC-DC Converter Applications and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 mΩ (typ.) · High forward transfer admittance: |Yfs| = 9.0 S (typ.)


    Original     		2SK3398 25transportation 2SK3398 PDF

    2SK3390

    Abstract: DSA003644
    Contextual Info: 2SK3390 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-846 Z 1st. Edition Aug.2001 Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd= 60 % min. (f = 836 MHz) • Compact package capable of surface mounting


    Original     		2SK3390 ADE-208-846 D-85622 D-85619 2SK3390 DSA003644 PDF

    Contextual Info: 2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3398 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.0 S (typ.)


    Original     		2SK3398 100are PDF

    2SK3398

    Contextual Info: 2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3398 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.0 S (typ.)


    Original     		2SK3398 2SK3398 PDF

    2SK3398

    Contextual Info: 2SK3398 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSV 2SK3398 ○ レギュレータ用､照明用 • 単位: mm : RDS (ON) = 0.4 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 9.0 S (標準)


    Original     		2SK3398 2SK3398 PDF