2SK3391JX Search Results

2SK3391JX Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SK3391JX		Renesas Technology		Original	PDF	60.06KB	5
2SK3391JXTL		Renesas Technology	RF FETs, Discrete Semiconductor Products, MOSFET N-CH 17V 300MA UPAK	Original	PDF		12
2SK3391JXTL-E		Renesas Technology	Silicon N-Channel MOS FET UHF Power Amplifier	Original	PDF	147.62KB	10

2SK3391JX Price and Stock

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Rochester Electronics LLC 2SK3391JX RF MOSFET 13.7V UPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK3391JX	Bulk			91	1 - 10 - 100 $3.32 1000 $3.32 10000 $3.32	Buy Now
Renesas Electronics Corporation 2SK3391JX Trans RF MOSFET N-CH 17V 0.3A 4-Pin(3+Tab) UPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SK3391JX		134,013		95	1 - 10 - 100 $3.79 1000 $3.39 10000 $3.19	Buy Now
Rochester Electronics	2SK3391JX		134,013		1	1 - 10 - 100 $3.03 1000 $2.71 10000 $2.55	Buy Now

2SK3391JX Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 2SK3391 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0209-0300 Rev.3.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. f = 836 MHz • Compact package capable of surface mounting	Original	2SK3391 REJ03G0209-0300 PLZZ0004CA-A	PDF
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
2SK3391 Abstract: 2SK3391JX Contextual Info: 2SK3391 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0209-0200Z Previous ADE-208-847 (Z Rev.2.00 Apr.14.2004 Features • High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. (f = 836 MHz) • Compact package capable of surface mounting	Original	2SK3391 REJ03G0209-0200Z ADE-208-847 2SK3391 2SK3391JX	PDF
2SK3391 Abstract: 2SK3391JXTL-E on 543 upak 319 0048 0 00 440 Contextual Info: 2SK3391 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0209-0300 Rev.3.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. f = 836 MHz • Compact package capable of surface mounting	Original	2SK3391 REJ03G0209-0300 PLZZ0004CA-A 2SK3391 2SK3391JXTL-E on 543 upak 319 0048 0 00 440	PDF
2SK3391 Abstract: 2SK3391JXTL-E Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF