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    K3399 Search Results

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    Cherry Embedded Solutions SOM-RK3399-Q7 2.3-C-2GB-16GB

    System-On-Modules - SOM System-on-Module (SOM), Q7, Rockchip RK3399, ARM Mali T864 MP4
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    Mouser Electronics SOM-RK3399-Q7 2.3-C-2GB-16GB 13
    • 1 $173.20
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    Cherry Embedded Solutions EVK-RK3399-Q7

    Development Boards & Kits - ARM The compact Mini-ITX Baseboard includes a pre-installed RK3399-Q7 SoM, plus a host of peripherals and interfaces, including HDMI, USB, PCIe, and more. The Theobroma Systems Baseboard operates with a single 12V DC power supply
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    Mouser Electronics EVK-RK3399-Q7 11
    • 1 $429.75
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    Cherry Embedded Solutions SOM-RK3399-Q7 2.3-I-4GB-32GB

    System-On-Modules - SOM System-on-Module (SOM) is a low-power, high-performance processor for computing, personal mobile internet devices, and other smart device applications. 2GB
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    Mouser Electronics SOM-RK3399-Q7 2.3-I-4GB-32GB 3
    • 1 $272.37
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    Cherry Embedded Solutions PUMA-SOM-RK3399-Q7

    System-On-Modules - SOM Versatile System-on-Module for smart devices that collect, process and output high resolution video streams.It is typically used to run 2 MIPI-CSI high-resolution cameras and a 4K / 60fps display.Potential Configuration: DRAM up to 4GB, EMMC up to 12
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    Mouser Electronics PUMA-SOM-RK3399-Q7
    • 1 $194.66
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    YAGEO Corporation AC0402FR-0747RL

    Thick Film Resistors - SMD 47 Ohms 1/16 W 50 V 1 % 0402 100 PPM / C - 55 C / + 155 C AEC-Q200
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    TTI AC0402FR-0747RL Reel 720,000 10,000
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    K3399 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SK3399

    Abstract: K3399 k339
    Contextual Info: K3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3399 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ) · High forward transfer admittance: |Yfs| = 5.2 S (typ) · Low leakage current: IDSS = 100 µA (max) (VDSS = 600 V)


    Original
    2sk3399k3399k339 PDF

    K3399

    Abstract: 2SK3399
    Contextual Info: K3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3399 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 600 V)


    Original
    2sk3399k3399 PDF

    Contextual Info: K3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3399 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ) • High forward transfer admittance: |Yfs| = 5.2 S (typ) • Low leakage current: IDSS = 100 µA (max) (VDSS = 600 V)


    Original
    2sk3399 PDF

    K3399

    Abstract: k339 2SK3399
    Contextual Info: K3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3399 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ) • High forward transfer admittance: |Yfs| = 5.2 S (typ) • Low leakage current: IDSS = 100 µA (max) (VDSS = 600 V)


    Original
    2sk3399k3399k339 PDF

    k3399

    Contextual Info: K3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3399 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ) • High forward transfer admittance: |Yfs| = 5.2 S (typ) • Low leakage current: IDSS = 100 µA (max) (VDSS = 600 V)


    Original
    2sk3399k3399 PDF

    K3399

    Abstract: 2SK3399 MJ10050
    Contextual Info: K3399 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV K3399 ○ スイッチングレギュレータ用 • 単位: mm オン抵抗が低い。 : RDS (ON) = 0.54 Ω (標準) • 順方向伝達アドミタンスが高い。: |Yfs| = 5.2 S (標準)


    Original
    2sk33992-10s1bk3399mj10050 PDF

    K3399

    Abstract: 2SK3399
    Contextual Info: K3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3399 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ) • High forward transfer admittance: |Yfs| = 5.2 S (typ) • Low leakage current: IDSS = 100 A (max) (VDSS = 600 V)


    Original
    2sk3399k3399 PDF