2SK301 Search Results

Contextual Info: MOSFET SMD Type Product specification 2SK3018 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Low on-resistance. +0.1 1.3-0.1 +0.1 2.4-0.1 • Features 0.4 3 1 ● Fast switching speed. 0.55 Drain 2 +0.1 0.95-0.1 +0.1 1.9-0.1 ● Drive circuits can be simple.

Contextual Info: 2SK3019 N-Channel MOSFET P b Lead Pb -Free 3 1 2 1. GATE FEATURES: * Low on-resistance * Fast switching speed * Low voltage drive makes this device ideal for portable equipment * Easily designed drive circuits * Easy to parallel 2. SOURCE 3. DRAIN SOT-523(SC-75)

F16W60

Abstract: 2SK3012 F16W60VX2
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK3012 F16W60VX2 600V 12A N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P (Unit : mm) FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

Contextual Info: Silicon Junction FETs Small Signal 2SK0301 (2SK301) Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm M Di ain sc te on na tin nc ue e/ d 5.0±0.2 4.0±0.2 5.1±0.2 • Features ■ Absolute Maximum Ratings (Ta = 25°C)

2SA20

Abstract: "dual TRANSISTORs" resistance dual audio circuit diagram 2SA2018 2SK3019
Contextual Info: EMF6 Transistors Power management dual transistors EMF6 2SA2018 and 2SK3019 are housed independently in a EMT6 package. (2) 0.5 0.5 1.0 1.6 (3) (4) (5) (1) 1.2 1.6 0.5 (6) 0.13 !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS 2SK3018 N-channel MOSFET SOT-23 FEATURES z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for portable equipment z Easily designed drive circuits

SPHE8202

Abstract: SPHE8202S 2SB1132R 1N4148 SMT BFR68 BC30 BC26 sphe8 ELCO-CON24 3904 smt
Contextual Info: Saalfeld & Freitas / Curitiba + D4 1N4148 SMT CDLDO 100 BC25 jan/2006 RFGND 1000PF GND 0.1UF BC26 0.01UF 0.1UF 0.1UF BC22 0.1UF C43 0.1UF BC21 BC24 3904 Q12 + DVD_VR CD_VR 0.1UF 0.1UF BC28 0.1UF BC29 RFGND RFGND Q9 2SK3018 2 R52 R45 2 Q7 2SK3018 100K 100K

JAPAN transistor

Abstract: 30v N channel MOS FET 2SK3019 ON503
Contextual Info: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating

2SK3018

Abstract: UM5K1N
Contextual Info: UM5K1N Transistors 2.5V Drive Nch+Nch MOS FET UM5K1N zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET UMT5 2.0 1.3 zFeatures 1) Two 2SK3018 transistors in a single UMT package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2SK3019 N-channel MOSFET SOT-523 FEATURES z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for portable equipment z Easily designed drive circuits

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2SK3019 N-channel MOSFET SOT-523 FEATURES z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for portable equipment z Easily designed drive circuits

Contextual Info: Silicon Junction FETs Small Signal 2SK0301 (2SK301) Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 M Di ain sc te on na tin nc ue e/ d • Features 0.7±0.2 ● Low noies, high gain ● High gate to drain voltage VGDO

UM5K1N

Abstract: 2SK3018 two transistor forward
Contextual Info: Transistor Small switching 30V, 0.1A UM5K1N FFeatures 1) Two 2SK3018 transistors in a single UMT package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance. 4) Low voltage drive (2.5V) makes this device ideal for portable equipment. 5) Easily designed drive circuits.

2SC5585

Abstract: 2SK3019
Contextual Info: EMF9 Transistors Power management dual transistors EMF9 2SC5585 and 2SK3019 are housed independently in a EMT6 package. !Application Power management circuit !Structure Silicon epitaxial planar transistor ROHM : EMT6 (5) (2) 0.5 0.5 1.0 1.6 (3) (4) (1) 1.2

Contextual Info: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating

2SK301

Abstract: 2SK0301
Contextual Info: Silicon Junction FETs Small Signal 2SK0301 (2SK301) Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features 13.5±0.5 ● Low noies, high gain ● High gate to drain voltage VGDO +0.2

F16W60VX2

Abstract: 2SK3012
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK3012 F16W60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P E-pack Case (Unit : mm) 600V 12A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.

Contextual Info: T O SH IB A 2SK3017 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSHI 2SK3017 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance

2SK3017

Contextual Info: 2SK3017 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK3017 DC−DC Converter, Relay Drive and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 1.05 Ω (typ.) l High forward transfer admittance : |Yfs| = 7.0 S (typ.)

MOSFET IGSS 100A

Abstract: 30v N channel MOS FET 2SK3019 nch power mosfet
Contextual Info: 2SK3019 Transistor 2.5V Drive Nch MOS FET 2SK3019 zDimensions Unit : mm zStructure Silicon N-channel MOSFET EMT3 0.7 1.6 0.55 0.3 (1) 0.2 0.2 0.5 0.5 0.15 0.1Min. 0.8 (2) 1.6 (3) zApplications Interfacing, switching (30V, 100mA) 1.0 (1)Source zFeatures 1) Low on-resistance.

k3017

Abstract: 2SK3017
Contextual Info: 2SK3017 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK3017 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.05 Ω (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.)

2sk4005

Abstract: 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2SK314 2SK315 2SK316 2SK317 2SK318 2SK319 2SK320 2SK321

Contextual Info: Power management dual transistors EMF32 / UMF32N DTA143T and 2SK3019 are housed independently in a EMT6 package. Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. (3) (4) (5) (2) (1) 1.2 1.6 0.5 0.13

2SK3018

Contextual Info: 2SK3018W N-Channel POWER MOSFET 3 DRAIN P b Lead Pb -Free 3 1 2 1 GATE Description: *Gate Protection Diode * Low on-resistance. * Fast switching speed. * Low voltage drive (2.5V) makes this device ideal for portable equipment. * Easily designed drive circuits.