2SK320 Search Results

Hitachi DSA002759

Contextual Info: 2SK3209 Silicon N Channel MOS FET High Speed Power Switching ADE-208-759 Z Target Specification, 1st. Edition Dec. 1, 1998 Features • Low on-resistance R DS =35mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline

Contextual Info: 2SK320 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V)20 I(D) Max. (A)5.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)50‚ Minimum Operating Temp (øC)

K3205

Abstract: 2SK3205
Contextual Info: 2SK3205 東芝電界効果トランジスタ 2 シリコンNチャネルMOS形 L −π−MOSⅤ 2SK3205 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm z 4V 駆動です。 : RDS (ON) = 0.36 Ω (標準)

2SK3203

Abstract: Hitachi DSA0076 dd 127 dd 127 d 2SK3203L
Contextual Info: 2SK3203 L , 2SK3203(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-1384A (Z) 2nd. Edition Jan. 2001 Features • Low on-resistance RDS(on) =11m typ. • Low drive current • 5V gate drive device can be driven from 5V source Outline LDPAK

2SK3205

Contextual Info: 2SK3205 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK3205 Switching Regulator Applications DC−DC Converter, and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 0.36 Ω (typ.)

HITACHI DIODE

Abstract: 2SK3207 Hitachi DSA00239
Contextual Info: 2SK3207 Silicon N Channel MOS FET High Speed Power Switching ADE-208-758A Z Target Specification 2nd. Edition Feb 1999 Features • Low on-resistance R DS = 70 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline

2SK3204

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3204 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE • ORDERING INFORMATION DESCRIPTION The 2SK3204 is N-Channel MOS Field Effect Transistor designed for high current switching applications. • PART NUMBER PACKAGE

K3205

Contextual Info: 2SK3205 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK3205 Switching Regulator Applications DC−DC Converter, and Motor Drive Applications Unit: mm z 4 V gate drive z Low drain−source ON resistance : RDS (ON) = 0.36 Ω (typ.)

2SK3204

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3204 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3204 is N-Channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3204

2sk4005

Abstract: 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2SK314 2SK315 2SK316 2SK317 2SK318 2SK319 2SK320 2SK321

K3205

Abstract: 2SK3205
Contextual Info: 2SK3205 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK3205 Switching Regulator Applications DC−DC Converter, and Motor Drive Applications Unit: mm z 4 V gate drive z Low drain−source ON resistance : RDS (ON) = 0.36 Ω (typ.)

Hitachi DSA0076

Abstract: 2SK3209
Contextual Info: 2SK3209 Silicon N Channel MOS FET High Speed Power Switching ADE-208-759A Z Target Specification 2nd. Edition Mar. 2001 Features • Low on-resistance R DS = 40mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline

2SK3200

Abstract: FM20
Contextual Info: 2SK3200 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS VGSS ±30 V ID ±10 A ±40 35 (Tc = 25ºC) ID (pulse) *1 PD min 500 Ratings typ I GSS I DSS (Ta = 25ºC) max Unit V I D = 100µA, VGS = 0V

HITACHI DIODE

Abstract: 2SK3207 Hitachi DSA00182 2sk32
Contextual Info: 2SK3207 Silicon N Channel MOS FET High Speed Power Switching ADE-208-758A Z Target Specification 2nd. Edition Feb 1999 Features • Low on-resistance R DS = 70 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline

HITACHI DIODE

Abstract: 2SK3209 Hitachi DSA00396
Contextual Info: 2SK3209 Silicon N Channel MOS FET High Speed Power Switching ADE-208-759 Z Target Specification 1st. Edition December 1998 Features • Low on-resistance R DS =35mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline

2SK3200

Abstract: FM20
Contextual Info: 2SK3200 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS VGSS ±30 V ID ±10 A ±40 35 (Tc = 25ºC) ID (pulse) *1 PD min 500 Ratings typ I GSS I DSS (Ta = 25ºC) max Unit V I D = 100µA, VGS = 0V

2SK3204

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3204 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Description The 2SK3204 is N-Channel MOS Field Effect Transistor designed for Package Drawing Unit : mm high current switching applications.

Contextual Info: 2SK3205 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK3205 Switching Regulator Applications DC−DC Converter, and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 0.36 Ω (typ.)

M04723

Contextual Info: 2SK3203 Spice parameter .SUBCKT 2sk3203 1 2 3 * Model generated on May 26, 99 * MODEL FORMAT: SPICE3 * Symmetry POWER MOS Model Version 1.0 * External Node Designations * Node 1 -> Drain * Node 2 -> Gate * Node 3 -> Source M1 9 7 8 8 MM L=100u W=100u * Default values used in MM:

2SK3209

Abstract: 2SK3209-E PRSS0003AD-A TO-220FMV
Contextual Info: 2SK3209 Silicon N Channel MOS FET High Speed Power Switching REJ03G1090-0300 Previous: ADE-208-759A Target Specification Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS = 40 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

5252 F 1009 4-pin

Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SK2056

Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1

KD510

Abstract: 2SK319 2SK320
Contextual Info: HI T A C H I /{ OPTO EL ECTRO NI CS > "44962Ö5 H I T A C H I / OPTOELECTRONICS! 73 DE I 44c][3205 mOlOOlM - • 73C 10014 D 2SK319,2SK320 SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER • FEATURES • Low On-Resistance.