2SK32 Search Results

Contextual Info: 2SK3214 Silicon N Channel MOS FET High Speed Power Switching REJ03G1093-0400 Rev.4.00 May 15, 2006 Features • Low on-resistance RDS = 130 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A

Contextual Info: 2SK3271-01 N-channel MOS-FET Trench Gate MOSFET 60V > Features - 6,5mΩ ±100A 155W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier

Contextual Info: IC Transistors MOSFET SMD Type Product specification 2SK3274S TO-252 Features Low on-resistance Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 typ. +0.1 0.60-0.1 2.3 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 High speed switching +0.15 0.50-0.15

Contextual Info: Transistors IC SMD Type Product specification 2SK3296 TO-263 +0.1 1.27-0.1 Features 4.5 V drive available Low on-state resistance +0.1 1.27-0.1 +0.2 4.57-0.2 Built-in gate protection diode Surface mount device available +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max

k3265

Abstract: 2SK3265 K3265 DATASHEET
Contextual Info: 2SK3265 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅣ 2SK3265 単位: mm ○ スイッチングレギュレータ用 : RDS (ON) = 0.72 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 :|Yfs| = 7.0 S (標準)

Contextual Info: IC Transistors SMD Type Product specification 2SK3224 TO-252 +0.2 9.70-0.2 Low Ciss : Ciss = 790 pF TYP. Built-in Gate Protection Diode +0.1 0.80-0.1 2.3 +0.1 0.60-0.1 +0.8 0.50-0.7 3.80 MAX. VGS = 4.0 V, ID = 10 A Unit: mm +0.1 2.30-0.1 +0.15 5.55-0.15

Contextual Info: Transistors IC SMD Type Product specification 2SK3299 TO-263 +0.1 1.27-0.1 Features Low gate charge Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 RDS on = 0.75 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low on-state resistance MAX. (VGS = 10 V, ID = 5.0 A) Avalanche capability ratings

ADE-208-742

Abstract: 2SK3287 DSA003643
Contextual Info: 2SK3287 Silicon N Channel MOS FET High Speed Switching ADE-208-742 C Z 4th.Edition. June 1999 Features • Low on-resistance R DS = 1.26 typ. (VGS = 10 V , ID = 150 mA) R DS = 2.8 typ. (VGS = 4 V , ID = 50 mA) • 4 V gate drive device. • Small package (MPAK)

2SK3289

Abstract: DSA003643
Contextual Info: 2SK3289 Silicon N Channel MOS FET High Speed Switching ADE-208-743B Z Target Specification 3rd.Edition. December 1998 Features • Low on-resistance R DS = 1.26Ω typ. (at V GS =10V , ID =150mA) R DS = 2.8Ω typ. (at V GS =4V , ID =50mA) • 4V gate drive device

2sk3262

Abstract: 2SK3262-01MR MOSFET 200v 20A n.channel
Contextual Info: 2SK3262-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters

d1379

Abstract: 2SK3225
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3225 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3225 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES PART NUMBER PACKAGE

2SK3218-01

Abstract: 2SK3219-01MR
Contextual Info: 2SK3219-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters

Hitachi DSA0076

Abstract: 2SK3212
Contextual Info: 2SK3212 Silicon N Channel MOS FET High Speed Power Switching ADE-208-752A Z 2nd. Edition Mar. 2001 Features • Low on-resistance R DS =0.1 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220FM D G 1 2

2SK3235

Abstract: Hitachi DSA0076
Contextual Info: 2SK3235 Silicon N Channel MOS FET High Speed Power Switching ADE-208-1371 Z 1st. Edition Mar. 2001 Features • • • • • Low on-resistance: R DS(on) = 0.3 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 50 ns typ (at VGS = 10 V, VDD = 250 V, ID = 7.5 A)

Hitachi DSA002753

Contextual Info: 2SK3287 Silicon N Channel MOS FET High Speed Switching ADE-208-742 C Z 4th.Edition. June 1999 Features • • • Low on-resistance RDS = 1.26 Ω typ. (VGS = 10 V , ID = 150 mA) RDS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA) 4 V gate drive device. Small package (MPAK)

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3224 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION T his p ro d u ct is N -C hannel M O S Field E ffe ct T ra n sisto r PA R T N U M B E R PACKAGE 2S K 3 2 2 4 TO-251 2 S K 3 2 2 4 -Z

2SK3296

Abstract: 2SK3296-S 2SK3296-ZJ MP-25 nec 2sk3296
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3296 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3296 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics,

2SK3295

Abstract: 2SK3295-S 2SK3295-ZJ MP-25
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3295 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3295 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics,

ac 1501

Abstract: nec 502 2SK3224 transistor k 790
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3224 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Description The 2SK3224 is N-Channel MOS Field Effect Transistor designed for Package Drawings Unit : mm high current switching applications.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3269 N-channel enhancement mode MOSFET • Features Unit: mm 4.6±0.2 (1.4) 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 • For PDP • For high-speed switching 0.6±0.1 10.1±0.3

ms 7301

Abstract: ltd 4601 g
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3277 Silicon N-channel power MOSFET Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 0.5±0.1 0.8 max. 1.8±0.1 7.3±0.1 • Avalanche energy capability guaranteed • High-speed switching

2SK3225

Abstract: D1379
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3225 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Description The 2SK3225 is N-Channel MOS Field Effect Transistor designed for Package Drawings Unit : mm high current switching applications.

2SK325

Abstract: RA 450 T 20
Contextual Info: 2SK325 7T-M O S il € o » » » » E * o 7s4 y 3-'S ? U =F n U ~ ^ , D C - D C = > > ' < o £ mm K 7-f ?m fff2ä0MAX. Í¿21.0MAX. — s « X i§it£ET*to : v (BR)DSS=450V -fao9 01.0 -ao4 K Í * ^ * 5 0 5 * ^ 0 : IYfB I = 5 S ( a i 3 S ) ( I D - 5 A )

D1406

Abstract: 2SK3294 2SK3294-S 2SK3294-ZJ MP-25 c4006
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3294 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3294 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC