2SK319 Search Results

KD510

Abstract: 2SK319 2SK320
Contextual Info: HI T A C H I /{ OPTO EL ECTRO NI CS > "44962Ö5 H I T A C H I / OPTOELECTRONICS! 73 DE I 44c][3205 mOlOOlM - • 73C 10014 D 2SK319,2SK320 SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER • FEATURES • Low On-Resistance.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3193 Silicon N-channel power MOSFET Unit: mm For switching 5.0±0.2 (0.7) 15.0±0.3 (3.2) 11.0±0.2 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating

2SK319

Abstract: 2SK320 th150 H3a y vus3
Contextual Info: 2SK319,2SK320 v U = l > N * * * ; U M O S FET SILICON N-CHANNEL MOS FET * * * • * * < ? HIGH SPEED POWER SWITCHING 1. Y — b 2. G ate Y ^ ■i 'y '• D rain {~7 7 y :J F lange) 3. 7 — X ! Source (D im ensions in mm) (JEDEC T O -2 20 A B ) ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

K3192

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3192 Silicon N-channel power MOSFET Unit: mm • Features 5.0±0.2 (0.7) 15.0±0.3 21.0±0.5 ■ Applications ■ Absolute Maximum Ratings TC = 25°C Parameter Rating Unit Drain-source surrender voltage

pl1520

Abstract: K3192
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3192 Silicon N-channel power MOSFET Unit: mm • Features 5.0±0.2 (0.7) 15.0±0.3 φ 3.2±0.1 M Di ain sc te on na tin nc ue e/ d 21.0±0.5 (3.2) 11.0±0.2 15.0±0.2 • Avalanche energy capability guaranteed

2SK3192

Contextual Info: Power F-MOSFETs 2SK3192 Silicon N-channel power F-MOSFET Unit: mm • Features 0.7 21.0±0.5 ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Drain-source breakdown voltage VDSS 250 V Gate to source voltage VGSS ±30 V ID ±30 A DC Pulse

K3192

Abstract: MOSFET MARKING 3F 2SK3192 M2502 K319
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3192 Silicon N-channel power MOSFET Unit: mm • Features 5.0±0.2 (0.7) 15.0±0.3 (3.2) 11.0±0.2 ■ Absolute Maximum Ratings TC = 25°C Parameter Drain-source surrender voltage

2sk4005

Abstract: 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2SK314 2SK315 2SK316 2SK317 2SK318 2SK319 2SK320 2SK321

2SK3199 equivalent

Abstract: 2SK3199 FM20
Contextual Info: 2SK3199 External dimensions 1 . FM20 Absolute Maximum Ratings Electrical Characteristics Ta = 25ºC Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS VGSS ±30 V ID ±5 A ±20 30 (Tc = 25ºC) (Ta = 25ºC) Ratings typ min 500 Unit max I GSS I DSS V I D = 100µA, VGS = 0V

2SK3193

Abstract: K3193
Contextual Info: Power MOSFETs 2SK3193 Silicon N-channel power MOSFET Unit: mm For switching 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 • Features Parameter 21.0±0.5 Symbol Rating Unit Drain-source surrender voltage VDSS 350 V Gate-source surrender voltage VGSS ±30 V Drain current

2SK3199

Abstract: 2SK3199 equivalent FM20
Contextual Info: 2SK3199 External dimensions 1 . FM20 Absolute Maximum Ratings Electrical Characteristics Ta = 25ºC Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS VGSS ±30 V ID ±5 A ±20 30 (Tc = 25ºC) (Ta = 25ºC) Ratings typ min 500 Unit max I GSS I DSS V I D = 100µA, VGS = 0V

K3192

Abstract: MOSFET MARKING 3F 2SK3192
Contextual Info: Power MOSFETs 2SK3192 Silicon N-channel power MOSFET Unit: mm • Features 5.0±0.2 0.7 15.0±0.3 21.0±0.5 ■ Applications ■ Absolute Maximum Ratings TC = 25°C Parameter Rating Unit Drain-source surrender voltage VDSS 250 V Gate-source surrender voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3193 Silicon N-channel power MOSFET Unit: mm For switching 5.0±0.2 (0.7) 15.0±0.3 (3.2) 11.0±0.2 • Features Parameter 21.0±0.5 Symbol Rating Unit Drain-source surrender voltage

K319

Abstract: MOSFET MARKING 3F 2SK3193
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3193 Silicon N-channel power MOSFET Unit: mm For switching 5.0±0.2 (0.7) 15.0±0.3 (3.2) M Di ain sc te on na tin nc ue e/ d 11.0±0.2 • Features 21.0±0.5 Symbol Rating Unit

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

TRANSISTOR 187

Abstract: fkv550 2sk2943 2SK1185 2SK3460 2SK2710a 2SK3724
Contextual Info: 2-2 MOS FET Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V VGSS (V) ID (A) ID (pulse) (A) PD (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions ID VDS (V) (µA) −60

c4468 power transistor equivalent

Abstract: c5287 equivalent transistor c4381 power transistor equivalent SLA5096 transistor c5287 circuit diagram sla5212 B1560 equivalent c4131 equivalent transistor C4300 transistor pin out c3856
Contextual Info: Transistors 2 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Ordering Information & Standard Packing Quantities . 154 Application Note . 156

fgt313

Abstract: c5287 equivalent transistor B1560 equivalent 2sk2079 c4381 FGT412 SLA4052 c5287 C4381 equivalent c3852a
Contextual Info: Transistors 2 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Ordering Information & Standard Packing Quantities . 150 Application Note . 152

2SC5586 equivalent

Abstract: c5287 equivalent transistor SLA4052 2SK3003 equivalent B1560 equivalent c4468 power transistor equivalent D2141 equivalent D2045 c4381 C3852
Contextual Info: Transistors 2 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Ordering Information & Standard Packing Quantities . 144 Application Note . 146

2sk30

Abstract: FKv550n 2SK3003 2SK3199 2SK2778
Contextual Info: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number 2SK2420 VDSS VGSS ID ID pulse PD (V) (V) (A) (A) (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions VDS ID (V)

2SK3460

Abstract: 2SK2710A 2SK3332 2SK3460 equivalent 2SK2708 FKV550T 2SK1190 2SK1191 2SK2706 2SK3199 equivalent
Contextual Info: 2-2 MOS FET Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V 2SJ424* VGSS (V) ID (A) ID (pulse) (A) PD (W) ±5 ±20 25 ±20 ±8 ±32 ±20 ±2.5 ±10 500 ±20 ±8.5 2SK1180 500 ±20 2SK1181 500 2SK1183 −60 ±20 2SJ425 −60

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

fn651

Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
Contextual Info: <Semiconductor Discontinued and Service Parts> 2010.8.20 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,