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    Vishay Intertechnologies RNR60K3193FMB14

    RNR60K3193FMB14 - Bulk (Alt: RNR60K3193FMB14)
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    Avnet Americas RNR60K3193FMB14 Bulk 100
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    Others K3193-21D-22.512000MHZ

    93-21D-22.512000MHZ
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    Quest Components K3193-21D-22.512000MHZ 3
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    Amphenol Corporation 91-552866-35J

    Circular MIL Spec Connector TV 66C 66#22D SKT PLUG NI
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    TTI 91-552866-35J Each 2,210 1
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    Panasonic Electronic Components TQ2-L2-24V

    Low Signal Relays - PCB 1A 24VDC DPDT 2 COIL LATCHING PCB
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    TTI TQ2-L2-24V Tube 485 2
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    Bourns Inc 3500S-2-503L

    Precision Potentiometers 7/8"WW 50Kohms 0.2% 10turn
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    TTI 3500S-2-503L Kit 50
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    K3193 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs K3193 Silicon N-channel power MOSFET Unit: mm For switching 5.0±0.2 (0.7) 15.0±0.3 (3.2) 11.0±0.2 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating


    Original
    2002/95/EC) 2SK3193 PDF

    k3025

    Abstract: K3192 k3047 K2538 k2960 K2923 K3035 K3165 K3028 k2576
    Contextual Info: GaAs MMIC Microwave Monolithic IC # For Amplifiers U /V CATV Wide Band Amp. Buffer Amp. Type No. NF (dB) PG (dB) Measuring Condition Circuit Configuration O .—. > ^ Application (mA) GN1010 2.0 9 3 25 100 to 2000 GN1042 2.2 10 3 40 50 to 800 GN1044 1.8


    OCR Scan
    GN1010 GN1042 GN1044 GN8061 GN8062 01076B N01077N 01087B 01091B 01093B k3025 K3192 k3047 K2538 k2960 K2923 K3035 K3165 K3028 k2576 PDF

    2SK3193

    Abstract: K3193
    Contextual Info: Power MOSFETs K3193 Silicon N-channel power MOSFET Unit: mm For switching 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 • Features Parameter 21.0±0.5 Symbol Rating Unit Drain-source surrender voltage VDSS 350 V Gate-source surrender voltage VGSS ±30 V Drain current


    Original
    2SK3193 2SK3193 K3193 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs K3193 Silicon N-channel power MOSFET Unit: mm For switching 5.0±0.2 (0.7) 15.0±0.3 (3.2) 11.0±0.2 • Features Parameter 21.0±0.5 Symbol Rating Unit Drain-source surrender voltage


    Original
    2002/95/EC) 2SK3193 15nteed PDF

    62A21

    Abstract: 3HD23 E78E
    Contextual Info: 123456789  123456789A6BC3DEF7989A6 E339F3B3EB85E3973A 3967C5"96#33 D9#98BC3A8A3A68AC3%6#96E3 &D%' 3 A E34B78A3AE789A63&(4' 39#3CE!EC3F*F8E$37A68AC3


    Original
    123456789A6BC3DEF7 39F3B3 3B3F96 3FAC589A63 37A68 3967C5 98BC3 34B78A E789A63& 62A21 3HD23 E78E PDF

    K319

    Abstract: MOSFET MARKING 3F 2SK3193
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs K3193 Silicon N-channel power MOSFET Unit: mm For switching 5.0±0.2 (0.7) 15.0±0.3 (3.2) M Di ain sc te on na tin nc ue e/ d 11.0±0.2 • Features 21.0±0.5 Symbol Rating Unit


    Original
    2002/95/EC) 2SK3193 K319 MOSFET MARKING 3F 2SK3193 PDF