2SJ424 Search Results

2SK3460

Abstract: 2SK2710A 2SK3332 2SK3460 equivalent 2SK2708 FKV550T 2SK1190 2SK1191 2SK2706 2SK3199 equivalent
Contextual Info: 2-2 MOS FET Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V 2SJ424* VGSS (V) ID (A) ID (pulse) (A) PD (W) ±5 ±20 25 ±20 ±8 ±32 ±20 ±2.5 ±10 500 ±20 ±8.5 2SK1180 500 ±20 2SK1181 500 2SK1183 −60 ±20 2SJ425 −60

2SJ424

Abstract: FM20
Contextual Info: 2SJ424 Ta = 25ºC Electrical Characteristics Ratings typ (Ta = 25ºC) Symbol Ratings Unit Symbol VDSS –60 V V(BR) DSS VGSS ± 20 V I GSS ± ± A I DSS A VTH –2.0 25 (Tc = 25ºC) W Re (yfs) 1.0 Tch 150 ºC RDS (on) 0.35 Tstg –55 to +150 ºC Ciss 270

2sj424

Abstract: FM20
Contextual Info: 2SJ424 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Ratings typ (Ta = 25ºC) Symbol Ratings Unit Symbol VDSS –60 V V(BR) DSS V I D = –250µA, VGS = 0V VGSS ± 20 V I GSS ± 500 nA VGS = 20V ± A I DSS –250 µA VDS = –60V, VGS = 0V

SLA5038

Abstract: 2SK1190 SLA5015 2SK1192 SLA5013 2SK1180 2SK1191 SLA5012 SMA5106 2SK2848
Contextual Info: 3 Power MOSFETs 3-1. MOSFETs 3-2. MOSFET Arrays 25 3-1. MOSFETs Nch Absolute Maximum Ratings Parameter Electrical Characteristics Ta = 25°C VDSS ID PD (Tc = 25°C) (V) (A) (W) (mJ) 2SK1188 10.0 25 2.1 0.200 300 2SK1189 15.0 30 6.2 0.100 640 Type No. * 2SK2419

Contextual Info: Contents Storage, characteristic inspection, and handling precautions . 2 External dimensions . 3 Avalanche energy capability . 4 Avalanche energy capability measuring method . 5

2SK1177

Abstract: 2SK2420 2SK1180
Contextual Info: 3-1. MOSFETs Nch Absolute Maximum Ratings Parameter Electrical Characteristics Ta = 25°C VDSS ID PD (Tc = 25°C) (V) (A) (W) (mJ) 2SK1188 10.0 25 2.1 0.200 300 2SK1189 15.0 30 6.2 0.100 640 Type No. * 2SK2419 22.0 35 EAS RDS (ON) max (VGS = 10V) Ciss (typ)

TRANSISTOR 187

Abstract: fkv550 2sk2943 2SK1185 2SK3460 2SK2710a 2SK3724
Contextual Info: 2-2 MOS FET Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V VGSS (V) ID (A) ID (pulse) (A) PD (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions ID VDS (V) (µA) −60

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

2sk1193

Abstract: sanken MOSFET 2SK1191 2SK1366 2SK1368 2SK2243 TO-220F torque transistor 2SK1191 Sanken SH 2SK1178
Contextual Info: Bulletin No T03EA0 Oct., 1999 SANKEN MOSFET ●Nch MOS FET ●Pch MOS FET CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

triac zd 607

Abstract: transistor C5586 bridge rectifier sanken rb40 rb40 bridge rectifier rb60 bridge rectifier ZD 607 - triac CTPG2F CTX12S Toshiba transistor c4468 STA524A
Contextual Info: Warning ● The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the latest version of the document before use. ● The operation and circuit examples in this document are provided for reference purposes

2SK1368

Abstract: 2SK1366 2sk1193 2SK1370 2SK2243 MOSFET TOSHIBA 2Sj425 2SK1181 2sj425 2SK1191 2SK2245
Contextual Info: Bulletin No T03EA0 Oct., 1999 SANKEN MOSFET ●Nch MOS FET ●Pch MOS FET CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

SE135N

Abstract: SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N
Contextual Info: Type No. Type Type No. Type Index Type No. Order 57 Index (Type No. Order) Type No. Type 2SA1186 2SA1215 Transistors for Audio Amplifier (LAPT) 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 2SA1493 2SA1494 2SA1567 2SA1568 2SA1667 2SA1668

HVR-1X 7 diode

Abstract: STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159
Contextual Info: Bulletin No O01EC0 JAN.,1998 SEMICONDUCTORS SHORT FORM CATALOG Power ICs Power Transistors PowerMOSFETs Tryristors Diodes Light Emitting Diodes CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility

2SC5586 equivalent

Abstract: 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent
Contextual Info: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements

em 234 stepper

Abstract: 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090
Contextual Info: Bulletin No O01ED0 Jun.,2001 SEMICONDUCTORS SHORT FORM CATALOG ICs TRANSISTORS THYRISTORS DIODES LIGHT EMITTING DIODES CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility

FKV550

Abstract: 2SK1177 2SK3199 FKV550T
Contextual Info: 2-2 Part No. FKV460 FKV460S MOS FETs VDSS RDS ON ID (V) (max) (Ω) (A) 40 FKV560 FKV560S 50 9mΩ 11mΩ TO-220F Under development, For Automotive 1 TO-220S For Automotive 2 60 TO-220F For Automotive 1 60 TO-220S Under development, For Automotive 2 50 TO-220F

Varistor RU

Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

2SC5586

Abstract: 2SC5586 equivalent 2SC5487 SAP16 sla 1003 SAP16N 2SA2003 transistor 2SC5586 sla6024 2SC5586 DATASHEET
Contextual Info: Transistors 2-1 Power Transistors . 14 2-1-1 Transistors for Audio Amplifiers . 14 • Complementary Transistors for Output . 14

2SK1366

Abstract: 2SK2240 2SK1713 2SK1173 16 FM 40 2sk2239 2sk1711 2SK2156A 2SK1177 2SK2156
Contextual Info: Power MOSFETs Power MOSFETs ÎËf? te üSfiA _'JJL Pd Te = 25"C} (W Igclifcal^har^tafBtics (Ta * 25C) « {Vcas = 1 0 V J Remarks <W ) m (m J ) 'w 2SK1188 10 2.1 0 2 300 FM20 2SK1189 15 f;. 2 0 1 640 FM 20 2SK2419 22 36 17 0.05 1250 FM20 2SK1190 22 35 '7

2SC5586

Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

2SK3004

Abstract: FKV550T 2SK3332 2SK3003 2SK3460 fkv550 2SK2803
Contextual Info: Contents Storage, characteristic inspection, and handling precautions . 2 External dimensions . 3 Avalanche energy capability . 4 Avalanche energy capability measuring method . 5

2SK3003

Abstract: FKV550T TO220F fkv550 2SK1185 2sk2943 2SK3199 2SK2420 2SK3460
Contextual Info: 2-2 Part No. FKV460 FKV460S MOS FETs VDSS RDS ON ID (V) (max) (Ω) (A) 40 FKV560 FKV560S 50 9mΩ 11mΩ Remarks TO-220F Under development, For Automotive 1 60 TO-220S For Automotive 2 60 TO-220F Under development, For Automotive 1 60 TO-220S Under development, For Automotive

FM2018

Abstract: 2sk1193 2SK1368 fkv550 2SK3332 T03EB0 2SK2245 2SK2943 2SK3460 2SK3199 equivalent
Contextual Info: Bulletin No. T03EB0 Nov., 2000 MOS FET CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

2SK2710

Contextual Info: 3-1. MOSFETs • N eh 2SK2707 2SK2708 600 4.5 35 50.0 ; 1.850 560 70 40 1500 1 1-100 950 300.0 i 0.850 1200 400.0 ! 0.550 1900 FM20 2SK2709 8.5 2SK2710 12.0 2SK2207 3.0 35 280.0 5.000 630 FM2Q 5.0 75 400.0 3.000 1000 FM100 900 2SK2208 85 ■Pch - r