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    2SK313 Search Results

    2SK313 Datasheets (55)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SK313
    Hitachi Semiconductor Silicon N-Channel MOS FET Scan PDF 234.73KB 3
    2SK313
    Hitachi Semiconductor Power Transistors Data Book Scan PDF 116.96KB 1
    2SK313
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 121.94KB 1
    2SK313
    Unknown FET Data Book Scan PDF 92.12KB 2
    2SK313
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 81.62KB 1
    2SK3130
    Toshiba TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Original PDF 205.32KB 6
    2SK3130
    Toshiba Original PDF 44.05KB 9
    2SK3130
    Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF 1.45MB 45
    2SK3131
    Toshiba Original PDF 44.05KB 9
    2SK3131
    Toshiba FETs - Nch 250V Original PDF 430.74KB 6
    2SK3131
    Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF 1.45MB 45
    2SK3131
    Toshiba Scan PDF 293KB 5
    2SK3131(Q)
    Toshiba 2SK3131 - MOSFET N-CH 500V 50A TO-3P(L) Original PDF 430.7KB 6
    2SK3132
    Toshiba FETs - Nch 250V Original PDF 423.81KB 6
    2SK3132
    Toshiba Original PDF 44.05KB 9
    2SK3132
    Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF 1.45MB 45
    2SK3132
    Toshiba Scan PDF 291.67KB 5
    2SK3132(Q)
    Toshiba 2SK3132 - MOSFET N-CH 500V 50A TO-3P(L) Original PDF 423.79KB 6
    2SK3133
    Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF 30.03KB 5
    2SK3133(L)
    Hitachi Semiconductor Power switching MOSFET Original PDF 30.02KB 5
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    2SK313 Price and Stock

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    Diodes Incorporated DMNH6042SK3-13

    - Tape and Reel (Alt: DMNH6042SK3-13)
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    Avnet Americas DMNH6042SK3-13 Tape & Reel 40 Weeks 2,500
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    TME DMNH6042SK3-13 2,500
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    • 10000 $0.36
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    Avnet Silica DMNH6042SK3-13 2,500 42 Weeks 2,500
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    Diodes Incorporated DMTH47M2SK3-13

    - Tape and Reel (Alt: DMTH47M2SK3-13)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas DMTH47M2SK3-13 Tape & Reel 40 Weeks 2,500
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    Hitachi Ltd 2SK313491STR

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA 2SK313491STR 3,115
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    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Flip Electronics 2SK3134L-E 768
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    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Flip Electronics 2SK3136-E 211
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    2SK313 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SK3132

    Abstract: K313 2SK313
    Contextual Info: T O S H IB A 2SK3132 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2 S K 3 1 32 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE TO-3P (L) APPLICATIONS


    OCR Scan
    2sk3132k3132sk313 PDF

    Contextual Info: 2SK3135 L ,2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-695B (Z) 3rd. Edition February 1999 Features • Low on-resistance • = 6 m ii typ. Low drive current • 4 V gate drive device can be driven from 5 V source R DS(on)


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    2sk3135ade-208-695b PDF

    2SK3131

    Contextual Info: T O S H IB A 2SK3131 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2 S K 3 1 31 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm TO-3P (L) APPLICATIONS


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    2sk3131 PDF

    Hitachi DSA00279

    Contextual Info: 2SK3133 L , 2SK3133(S) Silicon N Channel MOS FET High Speed Power Switching Target Specification ADE-208-720 (Z) 1st. Edition January 1999 Features • Low on-resistance R DS(on) =7mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source


    Original
    2sk3133ade-208-720hitachi dsa00279 PDF

    Hitachi DSA002749

    Contextual Info: 2SK3134 L , 2SK3134(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-721B (Z) 3rd. Edition Feb. 1, 1999 Features • Low on-resistance R DS(on) = 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline


    Original
    2sk3134ade-208-721bhitachi dsa002749 PDF

    Contextual Info: 2SK3134 L , 2SK3134(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI Features • Low on-resistance R ds(o„) = 4 m il typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline LDPAK ADE-208-721B (Z) 3rd. Edition


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    2sk3134ade-208-721b40815hitec PDF

    2SK3132

    Contextual Info: 2SK3132 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3132 Chopper Regulator DC−DC Converter, and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 0.07 Ω (typ.) l High forward transfer admittance : |Yfs| = 33 S (typ.)


    Original
    2sk3132 PDF

    2SK3132

    Abstract: IAR50
    Contextual Info: 2SK3132 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3132 Chopper Regulator DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.07 Ω (typ.) z High forward transfer admittance : |Yfs| = 33 S (typ.)


    Original
    2sk3132iar50 PDF

    2SK3136

    Abstract: 2SK3136-E PRSS0004AC-A
    Contextual Info: 2SK3136 Silicon N Channel MOS FET High Speed Power Switching REJ03G1068-0400 Previous: ADE-208-696B Rev.4.00 Sep 20, 2005 Features • Low on-resistance RDS(on) =4.5 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source


    Original
    2sk3136rej03g1068-0400ade-208-696bprss0004ac-a+2o-220ab2sk3136-e PDF

    2SK3131

    Contextual Info: 2SK3131 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3131 Chopper Regulator DC−DC Converter and Motor Drive Applications z Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) z Built-in high-speed free-wheeling diode z Low drain−source ON resistance


    Original
    2sk3131 PDF

    2SK3131

    Abstract: s105ns a1535 AS105 1535s
    Contextual Info: 2SK3131 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK3131 ○ レギュレータDC−DC コンバータ、モータドライブ用 単位: mm : trr = 105 ns (標準) z 逆回復時間が速い。 z 高速フリーホイリングダイオードを内蔵しています。


    Original
    2sk31312-21f1b2002/95/ecs105ns+3a1535as1051535s PDF

    25A15

    Abstract: 2SK3132 idp-200a
    Contextual Info: 2SK3132 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK3132 ○ レギュレータDC−DC コンバータ、モータドライブ用 : RDS (ON) = 0.07Ω (標準) z オン抵抗が低い。 単位: mm z 順方向伝達アドミタンスが高い。 : |Yfs| = 33S (標準)


    Original
    2sk313210vid2-21f1bvdd400v+225a15idp-200a PDF

    2SK3133

    Abstract: Hitachi DSA00276
    Contextual Info: 2SK3133 L , 2SK3133(S) Silicon N Channel MOS FET High Speed Power Switching Target Specification ADE-208-720A (Z) 2nd. Edition Mar. 2001 Features • Low on-resistance R DS(on) =7mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source


    Original
    2sk3133ade-208-720ad-85622hitachi dsa00276 PDF

    Hitachi DSA001652

    Contextual Info: 2SK3136 Silicon N Channel MOS FET High Speed Power Switching ADE-208-696A Z 2nd. Edition Nov. 1998 Features • Low on-resistance RDS(on) =4.5mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source 2SK3136 Outline TO–220AB


    Original
    2sk3136ade-208-696a220abhitachi dsa001652 PDF

    Contextual Info: 2SK3131 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3131 Chopper Regulator DC−DC Converter and Motor Drive Applications Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) Built−in high−speed free−wheeling diode


    Original
    2sk3131 PDF

    2SK3130

    Abstract: K3130
    Contextual Info: 2SK3130 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3130 Switching Regulator Applications Unit: mm • Reverse-recovery time: trr = 85 ns • Built-in high-speed flywheel diode • Low drain-source ON resistance: RDS (ON) = 1.12 Ω (typ.)


    Original
    2sk3130k3130 PDF

    2SK3131

    Abstract: TRANSISTOR 2sk3131
    Contextual Info: 2SK3131 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3131 Chopper Regulator DC−DC Converter and Motor Drive Applications z Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) z Built-in high-speed free-wheeling diode z Low drain−source ON-resistance


    Original
    2sk3131transistor 2sk3131 PDF

    2SK3130

    Contextual Info: 2SK3130 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3130 Switching Regulator Applications Unit: mm • Reverse-recovery time: trr = 85 ns • Built-in high-speed flywheel diode • Low drain-source ON resistance: RDS (ON) = 1.12 Ω (typ.)


    Original
    2sk3130 PDF

    DA300

    Abstract: Hitachi DSA00280
    Contextual Info: 2SK3134 L , 2SK3134(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-721B (Z) 3rd. Edition Feb. 1999 Features • Low on-resistance R DS(on) =4mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source Outline LDPAK


    Original
    2sk3134ade-208-721bd-85622da300+1hitachi dsa00280 PDF

    Hitachi DSA00281

    Contextual Info: 2SK3135 L , 2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-695B (Z) 3rd. Edition Feb. 1999 Features • Low on-resistance R DS(on) =6mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source Outline LDPAK


    Original
    2sk3135ade-208-695bd-85622hitachi dsa00281 PDF

    2SK3130

    Contextual Info: 2SK3130 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3130 Switching Regulator Applications Unit: mm • Reverse-recovery time: trr = 85 ns • Built-in high-speed flywheel diode • Low drain-source ON resistance: RDS (ON) = 1.12 Ω (typ.)


    Original
    2sk3130 PDF

    2SK3135

    Abstract: 2SK3135L-E 2SK3135STL-E PRSS0004AE-A
    Contextual Info: 2SK3135 L , 2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1067-0400 (Previous: ADE-208-695B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source


    Original
    2sk3135rej03g1067-0400ade-208-695bprss0004ae-a+3prss0004ae-b2sk3135l-e2sk3135stl-e PDF

    SK3132

    Abstract: k313 LM k313 2SK3132
    Contextual Info: TOSHIBA 2SK3132 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2 S K 3 1 32 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • Low Drain-Source ON Resistance : RßS (ON) = 0.07 Ci (Typ.)


    OCR Scan
    2sk3132sk3132k313 lmk313 PDF

    2SK3136

    Abstract: DSA0037509 DSA003750 Hitachi DSA003750
    Contextual Info: 2SK3136 Silicon N Channel MOS FET High Speed Power Switching ADE-208-696B Z 3rd. Edition February 1999 Features • Low on-resistance R DS(on) = 4.5 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline TO–220AB


    Original
    2sk3136ade-208-696b220abdsa0037509+2dsa003750hitachi dsa003750 PDF