2SK313 Search Results

2SK313 Datasheets (55)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SK313	Hitachi Semiconductor	Silicon N-Channel MOS FET	Scan	PDF	234.73KB	3
2SK313	Hitachi Semiconductor	Power Transistors Data Book	Scan	PDF	116.96KB	1
2SK313	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	121.94KB	1
2SK313	Unknown	FET Data Book	Scan	PDF	92.12KB	2
2SK313	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	81.62KB	1
2SK3130	Toshiba	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type	Original	PDF	205.32KB	6
2SK3130	Toshiba		Original	PDF	44.05KB	9
2SK3130	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF	1.45MB	45
2SK3131	Toshiba		Original	PDF	44.05KB	9
2SK3131	Toshiba	FETs - Nch 250V	Original	PDF	430.74KB	6
2SK3131	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF	1.45MB	45
2SK3131	Toshiba		Scan	PDF	293KB	5
2SK3131(Q)	Toshiba	2SK3131 - MOSFET N-CH 500V 50A TO-3P(L)	Original	PDF	430.7KB	6
2SK3132	Toshiba	FETs - Nch 250V	Original	PDF	423.81KB	6

2SK3132	Toshiba		Original	PDF	44.05KB	9
2SK3132	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF	1.45MB	45
2SK3132	Toshiba		Scan	PDF	291.67KB	5
2SK3132(Q)	Toshiba	2SK3132 - MOSFET N-CH 500V 50A TO-3P(L)	Original	PDF	423.79KB	6
2SK3133	Hitachi Semiconductor	Silicon N Channel MOS FET High Speed Power Switching	Original	PDF	30.03KB	5
2SK3133(L)	Hitachi Semiconductor	Power switching MOSFET	Original	PDF	30.02KB	5

2SK313 Price and Stock

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Diodes Incorporated DMNH6042SK3-13 - Tape and Reel (Alt: DMNH6042SK3-13)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	DMNH6042SK3-13	Tape & Reel		40 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.25	Get Quote
Mouser Electronics	DMNH6042SK3-13		2,138			1 $1.29 10 $0.60 100 $0.53 1000 $0.37 10000 $0.33	Buy Now
TME	DMNH6042SK3-13				2,500	1 - 10 - 100 - 1000 - 10000 $0.36	Get Quote
Avnet Silica	DMNH6042SK3-13		2,500	42 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Diodes Incorporated DMTH47M2SK3-13 - Tape and Reel (Alt: DMTH47M2SK3-13)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	DMTH47M2SK3-13	Tape & Reel		40 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.22	Buy Now
Mouser Electronics	DMTH47M2SK3-13		2,122			1 $1.16 10 $0.72 100 $0.47 1000 $0.33 10000 $0.28	Buy Now
Hitachi Ltd 2SK313491STR Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	2SK313491STR		3,115			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Renesas Electronics Corporation 2SK3134L-E Stock
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Flip Electronics	2SK3134L-E		768			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Renesas Electronics Corporation 2SK3136-E Stock
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Flip Electronics	2SK3136-E		211			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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2SK313 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SK3132 Abstract: K313 2SK313 Contextual Info: T O S H IB A 2SK3132 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2 S K 3 1 32 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE TO-3P (L) APPLICATIONS	OCR Scan	2sk3132 k313 2sk313	PDF
Contextual Info: 2SK3135 L ,2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-695B (Z) 3rd. Edition February 1999 Features • Low on-resistance • = 6 m ii typ. Low drive current • 4 V gate drive device can be driven from 5 V source R DS(on)	OCR Scan	2sk3135 ade-208-695b	PDF
2SK3131 Contextual Info: T O S H IB A 2SK3131 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2 S K 3 1 31 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm TO-3P (L) APPLICATIONS	OCR Scan	2sk3131	PDF
Hitachi DSA00279 Contextual Info: 2SK3133 L , 2SK3133(S) Silicon N Channel MOS FET High Speed Power Switching Target Specification ADE-208-720 (Z) 1st. Edition January 1999 Features • Low on-resistance R DS(on) =7mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source	Original	2sk3133 ade-208-720 hitachi dsa00279	PDF
Hitachi DSA002749 Contextual Info: 2SK3134 L , 2SK3134(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-721B (Z) 3rd. Edition Feb. 1, 1999 Features • Low on-resistance R DS(on) = 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline	Original	2sk3134 ade-208-721b hitachi dsa002749	PDF
Contextual Info: 2SK3134 L , 2SK3134(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI Features • Low on-resistance R ds(o„) = 4 m il typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline LDPAK ADE-208-721B (Z) 3rd. Edition	OCR Scan	2sk3134 ade-208-721b 40815hitec	PDF
2SK3132 Contextual Info: 2SK3132 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3132 Chopper Regulator DC−DC Converter, and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 0.07 Ω (typ.) l High forward transfer admittance : \|Yfs\| = 33 S (typ.)	Original	2sk3132	PDF
2SK3132 Abstract: IAR50 Contextual Info: 2SK3132 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3132 Chopper Regulator DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.07 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 33 S (typ.)	Original	2sk3132 iar50	PDF
2SK3136 Abstract: 2SK3136-E PRSS0004AC-A Contextual Info: 2SK3136 Silicon N Channel MOS FET High Speed Power Switching REJ03G1068-0400 Previous: ADE-208-696B Rev.4.00 Sep 20, 2005 Features • Low on-resistance RDS(on) =4.5 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source	Original	2sk3136 rej03g1068-0400 ade-208-696b prss0004ac-a +2o-220ab 2sk3136-e	PDF
2SK3131 Contextual Info: 2SK3131 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3131 Chopper Regulator DC−DC Converter and Motor Drive Applications z Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) z Built-in high-speed free-wheeling diode z Low drain−source ON resistance	Original	2sk3131	PDF
2SK3131 Abstract: s105ns a1535 AS105 1535s Contextual Info: 2SK3131 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅤ 2SK3131 ○ レギュレータDC−DC コンバータ、モータドライブ用単位: mm : trr = 105 ns (標準) z 逆回復時間が速い。 z 高速フリーホイリングダイオードを内蔵しています。	Original	2sk3131 2-21f1b 2002/95/ec s105ns +3a1535 as105 1535s	PDF
25A15 Abstract: 2SK3132 idp-200a Contextual Info: 2SK3132 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅤ 2SK3132 ○ レギュレータDC−DC コンバータ、モータドライブ用 : RDS (ON) = 0.07Ω (標準) z オン抵抗が低い。単位: mm z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 33S (標準)	Original	2sk3132 10vid 2-21f1b vdd400v +225a15 idp-200a	PDF
2SK3133 Abstract: Hitachi DSA00276 Contextual Info: 2SK3133 L , 2SK3133(S) Silicon N Channel MOS FET High Speed Power Switching Target Specification ADE-208-720A (Z) 2nd. Edition Mar. 2001 Features • Low on-resistance R DS(on) =7mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source	Original	2sk3133 ade-208-720a d-85622 hitachi dsa00276	PDF
Hitachi DSA001652 Contextual Info: 2SK3136 Silicon N Channel MOS FET High Speed Power Switching ADE-208-696A Z 2nd. Edition Nov. 1998 Features • Low on-resistance RDS(on) =4.5mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source 2SK3136 Outline TO–220AB	Original	2sk3136 ade-208-696a 220ab hitachi dsa001652	PDF

Contextual Info: 2SK3131 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3131 Chopper Regulator DC−DC Converter and Motor Drive Applications Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) Built−in high−speed free−wheeling diode	Original	2sk3131	PDF
2SK3130 Abstract: K3130 Contextual Info: 2SK3130 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3130 Switching Regulator Applications Unit: mm • Reverse-recovery time: trr = 85 ns • Built-in high-speed flywheel diode • Low drain-source ON resistance: RDS (ON) = 1.12 Ω (typ.)	Original	2sk3130 k3130	PDF
2SK3131 Abstract: TRANSISTOR 2sk3131 Contextual Info: 2SK3131 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3131 Chopper Regulator DC−DC Converter and Motor Drive Applications z Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) z Built-in high-speed free-wheeling diode z Low drain−source ON-resistance	Original	2sk3131 transistor 2sk3131	PDF
2SK3130 Contextual Info: 2SK3130 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3130 Switching Regulator Applications Unit: mm • Reverse-recovery time: trr = 85 ns • Built-in high-speed flywheel diode • Low drain-source ON resistance: RDS (ON) = 1.12 Ω (typ.)	Original	2sk3130	PDF
DA300 Abstract: Hitachi DSA00280 Contextual Info: 2SK3134 L , 2SK3134(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-721B (Z) 3rd. Edition Feb. 1999 Features • Low on-resistance R DS(on) =4mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source Outline LDPAK	Original	2sk3134 ade-208-721b d-85622 da300 +1hitachi dsa00280	PDF
Hitachi DSA00281 Contextual Info: 2SK3135 L , 2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-695B (Z) 3rd. Edition Feb. 1999 Features • Low on-resistance R DS(on) =6mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source Outline LDPAK	Original	2sk3135 ade-208-695b d-85622 hitachi dsa00281	PDF
2SK3130 Contextual Info: 2SK3130 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3130 Switching Regulator Applications Unit: mm • Reverse-recovery time: trr = 85 ns • Built-in high-speed flywheel diode • Low drain-source ON resistance: RDS (ON) = 1.12 Ω (typ.)	Original	2sk3130	PDF
2SK3135 Abstract: 2SK3135L-E 2SK3135STL-E PRSS0004AE-A Contextual Info: 2SK3135 L , 2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1067-0400 (Previous: ADE-208-695B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source	Original	2sk3135 rej03g1067-0400 ade-208-695b prss0004ae-a +3prss0004ae-b 2sk3135l-e 2sk3135stl-e	PDF
SK3132 Abstract: k313 LM k313 2SK3132 Contextual Info: TOSHIBA 2SK3132 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2 S K 3 1 32 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • Low Drain-Source ON Resistance : RßS (ON) = 0.07 Ci (Typ.)	OCR Scan	2sk3132 sk3132 k313 lm k313	PDF
2SK3136 Abstract: DSA0037509 DSA003750 Hitachi DSA003750 Contextual Info: 2SK3136 Silicon N Channel MOS FET High Speed Power Switching ADE-208-696B Z 3rd. Edition February 1999 Features • Low on-resistance R DS(on) = 4.5 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline TO–220AB	Original	2sk3136 ade-208-696b 220ab dsa0037509 +2dsa003750 hitachi dsa003750	PDF

2SK313 Search Results

2SK313 Datasheets (55)

2SK313 Price and Stock

Diodes Incorporated DMNH6042SK3-13

Diodes Incorporated DMTH47M2SK3-13

Hitachi Ltd 2SK313491STR

Renesas Electronics Corporation 2SK3134L-E

Renesas Electronics Corporation 2SK3136-E

2SK313 Datasheets Context Search

2SK3132

2SK3131

Hitachi DSA00279

Hitachi DSA002749

2SK3132

2SK3132

2SK3136

2SK3131

2SK3131

25A15

2SK3133

Hitachi DSA001652

2SK3130

2SK3131

2SK3130

DA300

Hitachi DSA00281

2SK3130

2SK3135

SK3132

2SK3136