2SK354 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET For switching • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain

2SK3544

Abstract: marking code 346
Contextual Info: 2SK3544 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK3544 Unit: mm Switching Regulator Applications • • • • Low drainsource ON-resistance: RDS (ON) = 0.29 Ω (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Features ■ Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F

2SK3546G

Abstract: 2sk3546
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET M Di ain sc te on na tin nc ue e/ d For switching • Package • High-speed switching • Wide frequency band • Code SSMini3-F3

2SK3546J

Abstract: 2sk3546
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546J Silicon N-Channel MOSFET For switching 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 Drain-source voltage Gate-source voltage (Drain open)

2SK3541PT

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SK3541PT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 100 mAmpere APPLICATION * Interfacing, switching 30V, 100mA FEATURE SOT-723 * Small surface mounting type. (SOT-723) * Low on-resistance

Contextual Info: 2SK3544 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK3544 Unit: mm Switching Regulator Applications • • • • Low drainsource ON-resistance: RDS (ON) = 0.29 Ω (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.)

Transistor marking code S

Contextual Info: 2SK3544 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK3544 Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.29 Ω (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.)

K3543

Contextual Info: 2SK3543 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3543 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.3 S (typ.)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546J Silicon N-Channel MOSFET For switching 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 Symbol Drain-source voltage VDS Gate-source voltage (Drain open)

2SK3541

Contextual Info: 2SK3541 Transistor Small switching 30V, 0.1A 2SK3541 zExternal dimensions (Unit : mm) 1.2 0.8 (2) (3) 0.8 1.2 0.32 0.2 0.4 0.4 0.2 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment.

2SK3541VGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts 2SK3541VGP CURRENT 100 mAmpere APPLICATION * Interfacing, switching 30V, 100mA FEATURE SOT-563 * Small surface mounting type. (SOT-563) * Low on-resistance

2SK3541SGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SK3541SGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 100 mAmpere APPLICATION * Interfacing, switching 30V, 100mA FEATURE SC-88/SOT-363 * Small surface mounting type. (SC-88/SOT-363)

Contextual Info: 2SK3544 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK3544 Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.29 Ω (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate MOSFETS 2SK3541 N-Channel MOSFET SOT-723 FEATURES z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for portable equipment z Drive circuits can be simple

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547 Silicon N-channel MOSFET Unit: mm 0.33+0.05 –0.02 For switching 0.10+0.05 –0.02 5˚ • High-speed switching • Wide frequency band • Gate-protection diode built-in

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547 Silicon N-channel MOSFET Unit: mm 0.33+0.05 –0.02 For switching 0.10+0.05 –0.02 5˚ • High-speed switching • Wide frequency band • Gate-protection diode built-in

2SK3544

Contextual Info: 2SK3544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3544 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.29 Ω (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.)

VGS-30V

Abstract: 900v mosfet 2sk3549 2SK3549-01 2sk354
Contextual Info: 2SK3549-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features 11.6±0.2 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

2SK3547G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET M Di ain sc te on na tin nc ue e/ d For switching • Package • High-speed switching • Wide frequency band • Gate-protection diode built-in

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547 Silicon N-channel MOSFET Unit: mm 0.33+0.05 –0.02 For switching 0.10+0.05 –0.02 0.80±0.05 1.20±0.05 di p Pl lan nclu ea e se pla m d m des ne ain ain foll

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F • Pin Name

2SK3541SPT

Abstract: N-Channel mosfet sot-363
Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SK3541SPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 100 mAmpere APPLICATION * Interfacing, switching 30V, 100mA FEATURE SC-88/SOT-363 * Small surface mounting type. (SC-88/SOT-363)

2sk3549

Abstract: 2SK3549-01 2SK3549 datasheet
Contextual Info: 2SK3549-01 200401 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features 11.6±0.2 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators