2SK42 Search Results

2SJ122

Abstract: 2SK428 diode 50v 5A K428 diode K428 Hitachi 2SJ
Contextual Info: HITACHI/iOPTOELECTRONICS} 44962U 5 H it A C H I/ O P T O E L h U IK 73 DE 0 0 1 0 071 73C 10071 U N iü b ; O T -3?-// 2SK428-SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING. HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ122 ¿3.6 ±0 2 6.3'min.

k4207

Abstract: 2SK4207 SC-65
Contextual Info: 2SK4207 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅣ 2SK4207 ○ スイッチングレギュレータ用 単位: mm 順方向伝達アドミタンスが高い。 : |Yfs| = 11 S (標準) • 漏れ電流が低い。 •

2SK427

Abstract: 2SK42 6017KI EN1404B
Contextual Info: Ordering number:EN1404B N-Channel Junction Silicon FET 2SK427 AM Tuner RF Amplifier Applications Applications Package Dimensions • AM tuner RF amplifiers and low-noise amplifiers. unit:mm 2034A Features [2SK427] · Largeyfs. · Ultralow noise figure.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV

2SK4222

Abstract: K422 2SK422 A1-5195-5 A1-5195 K4222 2SK42
Contextual Info: 2SK4222 Ordering number : ENA1519 SANYO Semiconductors DATA SHEET 2SK4222 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 10V drive. Avalanche resistance guarantee. Specifications

Contextual Info: 2SK4210 Ordering number : ENA1517 SANYO Semiconductors DATA SHEET 2SK4210 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee.

A1355

Abstract: 2SK4227JS K422 2SK422 K4227 2SK42
Contextual Info: 2SK4227JS 注文コード No. N A 1 3 5 5 三洋半導体データシート N 2SK4227JS N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ 低オン抵抗。 ・ モータドライブ用等。 ・ アバランシェ耐量保証。

Contextual Info: 2SK4222 Ordering number : ENA1519 SANYO Semiconductors DATA SHEET 2SK4222 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 10V drive. Avalanche resistance guarantee. Specifications

K4207

Contextual Info: 2SK4207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK4207 Swiching Regulator Applications Unit: mm 1.0 2.0 4.5 Ф3.2±0.2 15.9max. z Low drain−source ON-resistance: RDS (ON) = 0.78Ω (typ.) Absolute Maximum Ratings (Ta = 25°C)

K4208

Abstract: 2sk4208 2SK420
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs 2SK4208 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package  Gate-source surrender voltage VGSS : ±30 V guaranteed  Avalanche energy capability guaranteed: EAS > 801 mJ

2SK425

Contextual Info: JU N C TIO N FIELD EFFECT T R A N S IS T O R 2SK425 A U D IO FREQ U ENCY A M P L IF IE R N -C H A N N EL S IL IC O N J U N C T IO N FIELD EFFECT T R A N S IS T O R M IN I M O LD FEATURES PACKAGE DIMENSIONS • High Voltage in millimeters • High I Vfs I 2 .8 ± 0.2

2SK4201

Abstract: 2SK4201-S19 2SK42
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4201 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4201 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 13 mΩ MAX. (VGS = 10 V, ID = 40 A)

2SK427

Abstract: I00MH to-92 .y1 2sk427 transistor
Contextual Info: Ordering number: EN 1404A _ 2SK427 N-Channel Junction Silicon FET AM Tuner, RF Amp Applications Use • AM tuner RF amp, low-noise amp Features • Large |yfs| • Very low noise figure • Small Cfss Absolute Maximum Ratings/Ta = 25°C Drain to source voltage

2SK422

Abstract: 2SK42-2 LD06A
Contextual Info: FIELD EFFECT TRANSISTOR 2SK422 SILICON N CHANNEL MOS TYPE ^-M OS Unit in mm HIGH SPEED SWITCHING APPLICATIONS. DC-DC CONVERTER AND INTERFACE APPLICATIONS. &1MAX. FEATURES : . Excellent Switching Times . High Forward Transfer Admittance Low Leakage Current

2SK4200

Abstract: K4200 2SK4200LS A13333 A13334 2SK42 A13331 ENA1333
Contextual Info: 2SK4200LS Ordering number : ENA1333 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4200LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.

a1290

Abstract: K4204 2SK4204 2SK42 2SK4204LS ENA1290
Contextual Info: 2SK4204LS Ordering number : ENA1290 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4204LS General-Purpose Switching Device Applications Features • • 4V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C

2SK4206

Abstract: Marking code 9H 2SK4206G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV

Contextual Info: 2SK4221 Ordering number : ENA1518 SANYO Semiconductors DATA SHEET 2SK4221 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.

K4208

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs 2SK4208 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package  Gate-source surrender voltage VGSS : ±30 V guaranteed  Avalanche energy capability guaranteed: EAS > 801 mJ

Contextual Info: 2SK4210 Ordering number : ENA1517 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4210 General-Purpose Switching Device Applications Features • • • Low ON-resistance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee.

2sk4202

Abstract: nec k4202 k4202 2sk420 d1922 2SK4202-S19-AY NEC TRANSISTOR MARKING CODE 2SK4202-S19 2SK42
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4202 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4202 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 7.5 mΩ MAX. (VGS = 10 V, ID = 42 A)

2SK4213

Abstract: 2SK421 2SK4213-ZK 2SK42 2sk4213-zk-e1-ay
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4213 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4213 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

Contextual Info: 2SK4222 Ordering number : ENA1519 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4222 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 10V drive. Avalanche resistance guarantee. Specifications

A1516

Abstract: 2SK4209 A-1516 2SK42 k420
Contextual Info: 2SK4209 Ordering number : ENA1516 SANYO Semiconductors DATA SHEET 2SK4209 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee.