2SJ33 Search Results

toshiba lot number type

Abstract: 2SJ338 2SK2162 Toshiba 2SJ
Contextual Info: TOSHIBA 2SJ338 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ338 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : VDgg= —180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ.

K2162

Abstract: 2SJ338 2SK2162
Contextual Info: 2SK2162 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK2162 ○ 低周波電力増幅用 5.2 ± 0.2 : VDSS = 180 V 高順方向伝達アドミタンスです。 : |Yfs| = 0.7 S 標準 2SJ338 とコンプリメンタリになります。

J334

Abstract: 2SJ334
Contextual Info: 2SJ334 東芝電界効果トランジスタ 2 シリコンPチャネルMOS形 L −π−MOSⅤ 2SJ334 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm z 4V 駆動です。 : RDS (ON) = 29mΩ(標準) z オン抵抗が低い。

toshiba audio power amplifier

Abstract: Audio Power Amplifier TOSHIBA 2SJ338 2SK2162
Contextual Info: 2SJ338 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ338 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SK2162 Maximum Ratings (Ta = 25°C)

Contextual Info: TOSHIBA 2SJ338 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ 338 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : V;ogg= —180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ.

2sj332

Abstract: 2SJ33
Contextual Info: 2SJ332 L , 2SJ332 S Silicon P C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V Source • Suitable for Switching regulator, DC - DC

dS 3202

Abstract: 2SJ330 s62j
Contextual Info: ~ jr • v — h M 0 S B # ^ ^ / \ ° 7 - M 0 S FET MOS Field Effect Power Transistor 2SJ330 P ? - * * ; U / \ #7 - M 0 S FET X -f y 3 - > * )' I l f f l 2SJ330 l i P 31 + * JW \°7 - MOS FETT * < m m m it : mm) >y * ® S £ ^ D C - D C □ > / < • - £ t C f t ì l 7 1 o

J334 transistor

Abstract: transistor j334
Contextual Info: TOSHIBA 2SJ334 SILICON P CHANNEL MOS TYPE L2- tt-MOSV 2SJ334 INDUSTRIAL APPLICATIONS Unit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 3.2 ± 0 .2 1° 4V Gate Drive Low Drain-Source ON Resistance : Rq s (ON)= 29mQ (Typ.) High Forward Transfer Admittance : |Yfs| = 23S(Typ.)

J334 transistor

Abstract: j334 2SJ334
Contextual Info: 2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ334 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) z High forward transfer admittance

MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Abstract: Toshiba 2SJ toshiba marking code transistor
Contextual Info: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications • High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338 Unit: mm

2sj332

Abstract: 2SJ332S
Contextual Info: 2SJ332 L , 2SJ332(S) Silicon P-Channel MOS FET HITACHI ADE-208-073 1st. Edition Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source •

2SJ330

Abstract: MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 NEC Ü— DATA SHEET P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR r 2SJ330 SWITCHING P-CHANNEL POWER MOS FET

2SJ337

Contextual Info: Ordering number:EN4669 P-Channel Silicon MOSFET 2SJ337 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ337] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5

2SJ311

Abstract: 2SJ331 MP-88 Field Effect Transistors 2sj33
Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistors 2SJ331 P チャネル パワーMOS FET スイッチング用 2SJ311 は，P チャネルパワーMOS FET でオン抵抗が低く，スイッチング特性が優れており，各種アクチュエータ

2SK2637

Contextual Info: • LD Series Lineup Type No. Package V OSS * * - V (V) *0 o Pd m Electrical characteristics at Ta = 25°C « tm » 'iifflP. Absolute maximum 1 VDss = 12 V, P-channel m Vostofl) min to max M 2SJ316 2SJ335 1.0 ±15 PCP ±10 XP5 FX601 XP6 ±15 Vg s = 4V VfigstOV

Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SJ334 DATA SILICON P CHANNEL MOS TYPE L 2- 7 T - MOS V (2SJ334) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U n it in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE

Contextual Info: TOSHIBA 2SJ338 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ338 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : ^ D S S ~ —180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ.

sj33

Contextual Info: 2SJ333 L , 2SJ333 S Si li con P- Cha nn el MOS FET Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V Source • Suitable for Switching regulator, DC - DC

J334 transistor

Abstract: j334 2SJ334 transistor j334
Contextual Info: 2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ334 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) High forward transfer admittance

Contextual Info: 2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ334 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) High forward transfer admittance

Contextual Info: 2SJ333 L , 2SJ333(S) Silicon P-Channel MOS FET HITACHI ADE-208-072 1st. Edition Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source •

2SJ338

Abstract: 2SK2162 J338 Toshiba 2SJ toshiba marking code transistor
Contextual Info: 2SJ338 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type 2SJ338 Audio-Frequency Power Amplifier Applications z High breakdown voltage : VDSS = −180 V z High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm z Complementary to 2SK2162 Absolute Maximum Ratings (Ta = 25°C)

2SJ339

Contextual Info: Ordering number:ENN6396 P-Channel Silicon MOSFET 2SJ339 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ339] 4.5

J334 transistor

Contextual Info: TOSHIBA 2SJ334 SILICON P CHANNEL MOS TYPE L2- tt-MOSV 2SJ334 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source ON Resistance : Rq s (ON)= 29mQ (Typ.)