2SJ27 Search Results

2SJ279

Abstract: 2SJ279-S 2SJ279S Hitachi DSA001651
Contextual Info: 2SJ279 L , 2SJ279(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter

Contextual Info: 2SJ278 Silicon P C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC —DC

sanyo wx series

Abstract: sanyo wx 2SJ277
Contextual Info: 2SJ277 2093 2090 LD L o w D rive Series V Ds s = 1 0 0 V P Channel Power MOSFET 4241 F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SJ277-applied equipment.

2SJ271

Abstract: SC46 T0220AB
Contextual Info: KNo. N *5 4 5 3 San yo =mm#mxxm 2SJ271 ÍÉ ÍÍ unit V DSS V gss Id I dp PW= lOus, duty cycle S 1% Tc = 25°C PD Tch Tstg rn rn m n m ags ‘M M &M Tmmm i t ' f * - K ii«J± x-f A Sü Æ iaK V V A A W °C °C -1 0 0 ±15 -1 5 -60 70 150 - 5 5 - + 150 min

2SJ272

Abstract: ITR00288 ITR00289 ITR00290 ITR00291
Contextual Info: 注文コード No.N 4 2 3 8 2SJ272 No. 4 2 3 8 61599 新 2SJ272 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。 ・マイカレスパッケージで取り付け作業性が良い。

2SJ278

Abstract: Hitachi DSA00389
Contextual Info: 2SJ278 Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter

2SJ272

Contextual Info: Ordering number:EN4238 P-Channel Silicon MOSFET 2SJ272 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ272]

ITR00308

Abstract: 2SJ274 ITR00309 ITR00310 ITR00311
Contextual Info: 注文コード No.N 4 2 3 9 2SJ274 No. 4 2 3 9 52099 新 2SJ274 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。 ・マイカレスパッケージで取り付け作業性が良い。

2SJ276

Contextual Info: Ordering number: EN4749 _ 2SJ276 No.4749 P-Channel MOS Silicon FET Very High-Speed Sw itching Applications F e a tu r e s • Low ON resistance. •Very high-speed switching. • Low-voltage drive. ■Surface m ount type device m aking the following possible.

2SJ277

Contextual Info: Ordering num ber:EN 4241 2SJ277 No.4241 P-Channel MOS Silicon FET SANYO i Very High-Speed Switching Applications F e a tu re s • Low ON resistance. • Very high-speed switching. •Low-voltage drive. • Surface mount type device making the following possible.

2SJ275

Contextual Info: Ordering number:EN4240 2SJ275 No.4240 P-C hannel MOS Silicon FET SANTO Very High-Speed Switching Applications j F e a tu r e s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible.

2SJ275

Abstract: BU100
Contextual Info: 2SJ275 2093 2090 LD L o w D rive S eries VDs s = 1 0 0 V P Channel Power MOSFET 4240 F e a tu re s •Low ON resistance. • Very high-speed switching. ■Low-voltage drive. ■Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SJ275-applied equipm ent.

2SJ275

Contextual Info: Ordering number:EN4240 P-Channel Silicon MOSFET 2SJ275 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SJ275] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.

ITR00341

Abstract: ITR00342 2SJ277 ITR00338 ITR00339 ITR00340 2090a
Contextual Info: 注文コード No.N 4 2 4 1 2SJ277 No. 4 2 4 1 三洋半導体ニューズ 61499 新 2SJ277 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。

J279

Abstract: 2SJ279L Hitachi 2SJ 2SJ279S
Contextual Info: 2SJ279C , 2SJ279 Silicon P Channel MOS FET Application DPAK-1 High speed power switching 4 i Features • • • • Low on-resistance H igh speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC

2SJ274

Contextual Info: Ordering number:EN4239 P-Channel Silicon MOSFET 2SJ274 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ274]

Contextual Info: 2SJ278 Silicon P-Channel MOS FET H ITA C H I November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter

2SJ278

Abstract: Hitachi 2SJ DSA003638
Contextual Info: 2SJ278 Silicon P-Channel MOS FET ADE-208-1190 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter

Contextual Info: 2SJ279 L , 2SJ279(S) Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter

Hitachi 2SJ

Abstract: Hitachi DSA002779
Contextual Info: 2SJ278 Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter

2SJ274

Contextual Info: Ordering number: EN4239 2SJ274 No.4239 SAÊÊYO P-Channel MOS Silicon FET i Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • M icaless package facilitating m ounting. b s o lu te M a x im u m R a tin g s a tT a = 2 5 °C

EN4749

Abstract: 2SJ276
Contextual Info: Ordering number:EN4749 P-Channel Silicon MOSFET 2SJ276 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2090A [2SJ276] 10.2 4.5 3 1.2 2.55 0 to 0.3 0.4 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD 2.7 2.55 2 1.35 1 0.8 2.55 Specifications

2SJ271

Contextual Info: 2SJ271 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • Low-voltage dreve. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage

Contextual Info: 2SJ275 2093 LD L o w D rive S eries 2090 V DSs = 1 0 0 V P Channel Power M OSFET '£4240 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SJ275-applied equipm ent.