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    990929TM2FXHD Search Results

    990929TM2FXHD Datasheets Context Search

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    2SK1902

    Contextual Info: 2SK1902 N- Channel MOS Silicon FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high speed switching. • Low voltage drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage


    Original     		2sk1902o-220990929tm2fxhd PDF

    2SJ271

    Contextual Info: 2SJ271 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • Low-voltage dreve. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage


    Original     		2sj271--100v--50v--10v+2--15a990929tm2fxhd PDF

    2SJ406

    Contextual Info: 2SJ406 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • Low-voltage dreve. • Micaless package facilitating easy mounting. Absolute Maximum Ratings / Ta=25°C


    Original     		2sj406990929tm2fxhd PDF

    marking S139

    Abstract: S139
    Contextual Info: FSS139 Load S/W Applications TENTATIVE Features and Applications • Low ON-state resistance. • Ultrahigh-speed switching. • 2.5V drive. Absoulute Maximum Ratings / Ta=25°C Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current D.C ID


    Original     		fss1391200mm2--10v990929tm2fxhd-1/2+2marking s139s139 PDF