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2SJ29 Datasheets (81)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SJ29	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	80.61KB	1
2SJ29	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	90.68KB	1
2SJ290	Hitachi Semiconductor	Silicon P-channel MOS FET	Original	PDF	124.07KB	8
2SJ290	Renesas Technology	Silicon P-Channel MOS FET	Original	PDF	63.99KB	10
2SJ290	Hitachi Semiconductor	Power Transistors Data Book	Scan	PDF	317.49KB	3
2SJ290	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	51.6KB	1
2SJ290	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	69KB	1
2SJ290	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	71.83KB	1
2SJ290	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	68.79KB	1
2SJ290	Unknown	FET Data Book	Scan	PDF	112.28KB	2
2SJ291	Hitachi Semiconductor	Mosfet Guide	Original	PDF	6.15MB	1147
2SJ291	Renesas Technology	Silicon P-Channel MOS FET	Original	PDF	60.38KB	9
2SJ291	Hitachi Semiconductor	Power Transistors Data Book	Scan	PDF	317.48KB	3
2SJ291	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	71.83KB	1

2SJ291	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	51.6KB	1
2SJ291	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	69KB	1
2SJ291	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	68.79KB	1
2SJ291	Unknown	FET Data Book	Scan	PDF	112.28KB	2
2SJ292	Hitachi Semiconductor	Mosfet Guide	Original	PDF	6.15MB	1147
2SJ292	Renesas Technology	Silicon P-Channel MOS FET	Original	PDF	22.87KB	4

2SJ29 Price and Stock

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Renesas Electronics Corporation


Renesas Electronics Corporation 2SJ296STL-E SILICON P-CHANNEL MOS FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SJ296STL-E		955		76	1 - 10 - 100 $4.72 1000 $4.22 10000 $3.98	Buy Now
Rochester Electronics	2SJ296STL-E		955		1	1 - 10 - 100 $3.78 1000 $3.38 10000 $3.18	Buy Now
Renesas Electronics Corporation 2SJ297-91L 2SJ297-91L
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SJ297-91L		83		78	1 - 10 - 100 $4.61 1000 $4.13 10000 $3.88	Buy Now
Rochester Electronics	2SJ297-91L		83		1	1 - 10 - 100 $3.69 1000 $3.30 10000 $3.10	Buy Now
Renesas Electronics Corporation 2SJ293-E MOSFET N-Channel 60V 15A (Ta) TO-220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	2SJ293-E		37		1	1 - 10 - 100 $4.36 1000 $3.90 10000 $3.67	Buy Now
Renesas Electronics Corporation 2SJ296STLE GENERAL SWITCHING POWER MOS FET Power Field-Effect Transistor, 15A I(D), 60V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	2SJ296STLE		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Renesas Electronics Corporation 2SJ295-E (Alt: 2SJ295-E)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Asia	2SJ295-E				600	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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2SJ29 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SJ294 Abstract: 2SJ291 Contextual Info: 2SJ294 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter	OCR Scan	2sj294 o-22qfm 2sj291	PDF
Contextual Info: 2SJ292 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter	OCR Scan	2sj292 2sj280	PDF
Hitachi DSA001651 Contextual Info: 2SJ290 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter	Original	2sj290 o-220ab hitachi dsa001651	PDF
2SJ293 Contextual Info: 2SJ293 Silicon P C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC	OCR Scan	2sj293 2sj290	PDF
2SJ290 Contextual Info: 2SJ290 Silicon P-Channel MOS FET Application TO–220AB High speed power switching Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC	Original	2sj290 220ab	PDF
2SJ297 Abstract: 2SJ291 Contextual Info: 2SJ297 L , 2SJ297 S Silicon P-Channel MOS FET Application LDPAK High speed power switching 4 4 Features 1 • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC	Original	2sj297 2sj291	PDF
2SJ293 Abstract: Hitachi DSA001651 Contextual Info: 2SJ293 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter	Original	2sj293 o-220fm hitachi dsa001651	PDF
2SJ28 Contextual Info: 2SJ292 Silicon P C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC	OCR Scan	2sj292 2sj280 2sj28	PDF
Contextual Info: 2SJ294 Silicon P C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC	OCR Scan	2sj294 2sj291	PDF
2SJ297 Contextual Info: 2SJ297 L , 2SJ297(S) Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter	OCR Scan	2sj297 2sj291	PDF
HITACHI 2SJ* TO-3 Contextual Info: 2SJ290 Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for sw itching regulator, DC-DC converter	OCR Scan	2sj290 hitachi 2sj* to-3	PDF
2SJ293 Contextual Info: 2SJ293 Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter	OCR Scan	2sj293 o-220fm 2sj290	PDF
Contextual Info: 2SJ290 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter	OCR Scan	2sj290	PDF
2SJ294 Abstract: Hitachi DSA001651 Contextual Info: 2SJ294 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter	Original	2sj294 o-220fm hitachi dsa001651	PDF

2SJ297 Contextual Info: 2SJ297 L , 2SJ297 S Silicon P - C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC	OCR Scan	2sj297 2sj291	PDF
2SJ297 Abstract: Hitachi 2SJ Hitachi DSA001651 Contextual Info: 2SJ297 L , 2SJ297(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter	Original	2sj297 hitachi 2sj hitachi dsa001651	PDF
2SJ295 Abstract: 2SJ280 Contextual Info: 2SJ295 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter	OCR Scan	2sj295 o-22qfm 2sj280	PDF
j291 Contextual Info: 2SJ291 Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter	OCR Scan	2sj291 symbol-20 j291	PDF
2SJ291 Contextual Info: 2SJ291 Silicon P Channel MOS FET Application TO–220AB High speed power switching Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven form 5 V source • Suitable for Switching regulator, DC – DC	Original	2sj291 220ab	PDF
2sj28 Abstract: 2SJ72 2sj26 2SJ83 2SJ99 2SJ96 2SJ18 2SJ82 2SJ90 2SJ73 Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) Pd/Pch Tj/Tch min UP07 2N5465 2SJ10 2SJ11 2SJ12 2SJ13 2SJ15 2SJ16 2SJ17 2SJ18 2SJ19 2SJ20 2SJ21 2SJ22 2SJ26 2SJ27 2SJ28 2SJ29 2SJ32 2SJ33 2SJ39 2SJ40	Original	2n5465 2sj10 2sj11 2sj12 +152sj13 2sj15 2sj16 2sj17 2sj18 2sj19 2sj28 2sj72 2sj26 2sj83 2sj99 2sj96 2sj82 2sj90 2sj73	PDF
A4080 Contextual Info: 2SJ291 Silicon P C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V gate drive device can be driven form 5 V source • Suitable for Switching regulator, DC - DC	OCR Scan	2sj291 a4080	PDF
J296 Contextual Info: 2SJ296 L , 2SJ296 S Silicon P - C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC	OCR Scan	2sj296 2sj290 j296	PDF
2SJ296S Abstract: 2SJ296 Hitachi 2SJ Hitachi DSA001651 Contextual Info: 2SJ296 L , 2SJ296(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter	Original	2sj296 2sj296s hitachi 2sj hitachi dsa001651	PDF
Contextual Info: 2SJ297 L , 2SJ297(S) Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter	OCR Scan	2sj297 2sj291	PDF

2SJ29 Search Results

2SJ29 Datasheets (81)

2SJ29 Price and Stock

Renesas Electronics Corporation 2SJ296STL-E

Renesas Electronics Corporation 2SJ297-91L

Renesas Electronics Corporation 2SJ293-E

Renesas Electronics Corporation 2SJ296STLE

Renesas Electronics Corporation 2SJ295-E

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