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    2SJ40 Search Results

    2SJ40 Datasheets (68)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SJ40
    Unknown FET Data Book Scan PDF 92.14KB 2
    2SJ40
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 90.68KB 1
    2SJ400
    Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF 42.19KB 4
    2SJ400
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 111.2KB 1
    2SJ400
    Sanyo Semiconductor Ultra High Speed Switching MOSFET Scan PDF 187.23KB 1
    2SJ400
    Sanyo Semiconductor TO-3PB, ZP, SMP Type Transistors Scan PDF 103.11KB 1
    2SJ400
    Sanyo Semiconductor Large Signal Power MOSFET Scan PDF 511.51KB 3
    2SJ401
    Toshiba TRANS MOSFET P-CH 60V 20A 3(2-10S2B) Original PDF 447.95KB 6
    2SJ401
    Toshiba Original PDF 44.05KB 9
    2SJ401
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    2SJ401
    Toshiba P-Channel MOSFET Original PDF 426.96KB 6
    2SJ401
    Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF 1.45MB 45
    2SJ401
    Toshiba Silicon P channel field effect transistor for high speed, high current switching applications, relay drive, DC-DC converter and motor drive applications Scan PDF 287.62KB 5
    2SJ401
    Toshiba FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (LL-pi-MOSV) Scan PDF 316.58KB 5
    2SJ401(Q)
    Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 20A TO-220FL Original PDF 6
    2SJ401(TE24L)
    Toshiba TRANS MOSFET P-CH 60V 20A 3(2-10S2B) T/R Original PDF 447.95KB 6
    2SJ402
    Toshiba TRANS MOSFET P-CH 60V 30A 3(2-10S2B) Original PDF 448.07KB 6
    2SJ402
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    2SJ402
    Toshiba P-Channel MOSFET Original PDF 427.33KB 6
    2SJ402
    Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF 1.45MB 45
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    2SJ40 Price and Stock

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    Rochester Electronics LLC 2SJ403

    P-CHANNEL POWER MOSFET
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    DigiKey () 2SJ403 Bulk 319
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    2SJ403 Bulk 319
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    Rochester Electronics LLC 2SJ409-90STR

    MOSFET P-CH 100V 20A
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    DigiKey 2SJ409-90STR Bulk 39
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    Samtec Inc RF047-A-92SJ-404040-0700

    "50 OHM
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    DigiKey RF047-A-92SJ-404040-0700 Bulk
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    onsemi 2SJ403

    2SJ403
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    Verical () 2SJ403 9,300 399
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    2SJ403 1,770 399
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    Rochester Electronics 2SJ403 11,070 1
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    Renesas Electronics Corporation 2SJ409-90STR

    2SJ409-90STR
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    Verical () 2SJ409-90STR 3,000 49
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    2SJ409-90STR 2,000 49
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    Rochester Electronics 2SJ409-90STR 5,000 1
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    2SJ40 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SJ402

    Contextual Info: TOSHIBA 2SJ402 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ402 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in m m TO-220FL DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 10.3M A X


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    2SJ402 O-220FL PDF

    J402

    Abstract: 2SJ402
    Contextual Info: 2SJ402 東芝電界効果トランジスタ 2 シリコンPチャネルMOS形 L −π−MOSⅤ 2SJ402 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm z 4V 駆動です。 : RDS (ON) = 29 mΩ (標準) z オン抵抗が低い。


    Original
    2SJ402 2-10S1B 2002/95/EC) J402 2SJ402 PDF

    J407

    Abstract: 2SJ407
    Contextual Info: 2SJ407 東芝電界効果トランジスタ シリコンPチャネルMOS形 π−MOSⅤ 2SJ407 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm z 4V 駆動です。 z オン抵抗が低い。 : RDS (ON) = 0.8Ω (標準)


    Original
    2SJ407 -100A -200V) -10VID SC-67 2-10R1B 2002/95/EC) J407 2SJ407 PDF

    2SJ401

    Contextual Info: 2SJ401 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ401 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 33 mΩ (typ.) High forward transfer admittance


    Original
    2SJ401 2SJ401 PDF

    Contextual Info: 2SJ408 L , 2SJ408(S) Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter


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    2SJ408 PDF

    2SJ408

    Abstract: Hitachi DSA001651
    Contextual Info: 2SJ408 L , 2SJ408(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter


    Original
    2SJ408 Hitachi DSA001651 PDF

    Hitachi 2SJ

    Abstract: Hitachi DSA001651
    Contextual Info: 2SJ409 L , 2SJ409(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter


    Original
    2SJ409 D-85622 Hitachi 2SJ Hitachi DSA001651 PDF

    2SJ407

    Abstract: FAJ 20
    Contextual Info: TOSHIBA 2SJ407 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-M OSV 2SJ407 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ±0.3 , "Ly


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    2SJ407 -200V) 2SJ407 FAJ 20 PDF

    2SJ402

    Contextual Info: 2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ402 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) High forward transfer admittance


    Original
    2SJ402 2SJ402 PDF

    2SJ405

    Abstract: "2063a ITR00497 ITR00498 ITR00499 2063A
    Contextual Info: 注文コード No. N 5 5 2 2 A 2SJ405 No. 5 5 2 2 A 三洋半導体ニューズ 52599 新 開発速報 No. ※ 5522 とさしかえてください。 2SJ405 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用


    Original
    2SJ405 ITR00497 ITR00498 ITR00499 2SJ405 "2063a ITR00497 ITR00498 ITR00499 2063A PDF

    2SJ407

    Contextual Info: TOSHIBA 2SJ407 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-MOSV 2SJ407 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS r Low Drain-Source ON Resistance : Rd S(ON)“ 0.8O (Typ.)


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    2SJ407 -200V) 2SJ407 PDF

    transistor j402

    Abstract: J402 TOSHIBA
    Contextual Info: 2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ402 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) z High forward transfer admittance


    Original
    2SJ402 transistor j402 J402 TOSHIBA PDF

    Contextual Info: 2SJ401 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ401 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 33 mΩ (typ.) z High forward transfer admittance


    Original
    2SJ401 PDF

    J401

    Abstract: 2SJ401
    Contextual Info: 2SJ401 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ401 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 33 mΩ (typ.) High forward transfer admittance


    Original
    2SJ401 J401 2SJ401 PDF

    2SJ406

    Contextual Info: 2SJ406 注文コード No. N 5 5 2 3 三洋半導体データシート N 2SJ406 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。


    Original
    2SJ406 --12A IT13328 IT13329 IT13327 2SJ406 PDF

    2SJ402

    Contextual Info: 2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ402 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) l High forward transfer admittance


    Original
    2SJ402 2SJ402 PDF

    2SJ408

    Contextual Info: 2SJ408 L , 2SJ408 S Silicon P-Channel MOS FET Application HDPAK 4 High speed power switching 4 Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC


    Original
    2SJ408 PDF

    Contextual Info: TOSHIBA 2SJ407 TOSHIBA FIELD EFFECT TRANSISTOR 3 <; SILICON P CHANNEL MOS TYPE tt-MOSV I ¿ L Î 1 7 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS •


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    2SJ407 --200V) ----50V, PDF

    J402

    Abstract: 2SJ402
    Contextual Info: 2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ402 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) z High forward transfer admittance


    Original
    2SJ402 J402 2SJ402 PDF

    Hitachi 2SJ

    Abstract: Hitachi DSA002779
    Contextual Info: 2SJ409 L , 2SJ409(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter


    Original
    2SJ409 2SJ409stics Hitachi 2SJ Hitachi DSA002779 PDF

    2SJ409

    Abstract: Hitachi 2SJ Hitachi DSA00276
    Contextual Info: 2SJ409 L , 2SJ409(S) Silicon P-Channel MOS FET ADE-208-1197 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source


    Original
    2SJ409 ADE-208-1197 D-85622 Hitachi 2SJ Hitachi DSA00276 PDF

    2SJ401

    Contextual Info: T O S H IB A 2SJ401 2SJ401 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 4 V Gate Drive Low Drain-Souree ON Resistance : R d S (ON) — 33 m il (Typ.)


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    2SJ401 O-22QFL 2SJ401 PDF

    TA-2164

    Abstract: it-007 N642 2SJ400
    Contextual Info: 注文コード No. N 6 4 2 2 2SJ400 No. N6422 N0199 2SJ400 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。 ・面実装に対応し工数低減およびセットの高密度 , 小型化が可能となる。


    Original
    2SJ400 N6422 N0199 --35A IT00716 IT00717 IT00718 IT00719 TA-2164 it-007 N642 2SJ400 PDF

    HAT2005F

    Abstract: HAT1001F
    Contextual Info: Replacements for Power MOS FET We recommend that you consider replacing your current Power MOS FET when you develop a new product because the following product types will become obsolete. Current type Replacement 2SJ408 L 2SJ505(L) 2SJ408(S) 2SJ505(S) HAT1001F


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    2SJ408 HAT1001F HAT1002F HAT1004F HAT1005F HAT1006F HAT1007F HAT1008F HAT1009F HAT2005F PDF