2SJ22 Search Results

Contextual Info: 2SJ225 2087 i L D L o w D riv e S e r ie s V D5S= 3 0 V P Channel Power M OSFET E 38 10 F e a tu re s •Small ON resistance. ■Very high-speed switching. ■Low-voltage drive. • Meets radial taping. A bsolute M axim um R atings a tT a = 25°C Drain to Source Voltage

Contextual Info: 2SJ226 LD L o w D rive S eries VDss = 3 0 V 2085 P Channel Power M OSFET •E -381 I F e a tu re s ■Low ON resistance. ■Very high-speed switching. ■Low-voltage drive. • Its height onboard is 9.5mm. ■Meets radial taping. A bsolute M axim um R atin g s at Ta = 25°C

Contextual Info: 2SJ220 L , 2SJ220(S) Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Hitachi DSA002713

Contextual Info: 2SJ222 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SJ229

Contextual Info: O rdering num ber: EN 3 8 1 4 _ 2SJ229 No.3814 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s •Low ON resistance. ■Very high-speed switching. ■Low-voltage drive. • Its height onboard is 9.5mm. • Meets radial taping.

DS-16 SANYO

Abstract: 2SJ226
Contextual Info: Ordering num ber:EN3811 No.3811 _ 2SJ226 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive, • Its height onboard is 9.5mm. - Meets radial taping.

2SJ227

Contextual Info: O rdering num ber: EN 3 8 1 2 _ 2SJ227 No.3812 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON resistance. • Very high-speed switching. •Low-voltage drive. ■Its height onboard is 9.5mm. • Meets radial taping.

Hitachi 2SJ

Abstract: Hitachi DSA00279
Contextual Info: 2SJ222 Silicon P-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

J221

Abstract: 2SJ221 jc100
Contextual Info: HITACHI 2SJ221-SILICON P-CHANNEL MOS FET ,1-5 max HIGH SPEED PO W ER SWITCHING • FEATURE # Low On-Resistance # High Speed Switching # Low Drive Current -05- # 4 V Gate Drive Device - Can be driven from 5V source # Suitable for Motor Drive, DC-DC Converter,

2SJ229

Contextual Info: Ordering number:EN3814 P-Channel Silicon MOSFET 2SJ229 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. unit:mm

Contextual Info: 2SJ221 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SJ221

Abstract: DSA003771 Hitachi 2SJ
Contextual Info: 2SJ221 Silicon P-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SJ229

Contextual Info: Ordering number : EN3814 SANYO Semiconductors DATA SHEET 2SJ229 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm.

EN3813

Abstract: 2SJ228
Contextual Info: Ordering number:EN3813 P-Channel Silicon MOSFET 2SJ228 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. unit:mm 2087A [2SJ228] 2.5 1.45 1.0

2SJ221

Abstract: 2SJ222 Hitachi 2SJ Hitachi DSA00389
Contextual Info: 2SJ222 Silicon P-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SJ225

Contextual Info: Ordering number:EN3810 P-Channel Silicon MOSFET 2SJ225 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. unit:mm 2087A [2SJ225] 2.5 1.45 1.0

2SJ221

Abstract: 2SJ222 Hitachi 2SJ DSA003638
Contextual Info: 2SJ222 Silicon P-Channel MOS FET ADE-208-1186 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SJ220

Abstract: Hitachi 2SJ Hitachi DSA001651
Contextual Info: 2SJ220 L , 2SJ220(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

PE-50

Abstract: 2SJ221 Hitachi 2SJ DSA003638
Contextual Info: 2SJ221 Silicon P-Channel MOS FET ADE-208-1185 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Contextual Info: 2SJ222 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Contextual Info: 2SJ229 LD L o w D rive S eries V Dss = 6 0 V 2085 P Channel Power M OSFET 3814 F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Its height onboard is 9.5mm. • M eets radial taping. A b so lu te M ax im u m R a tin g s a t Ta = 25°C

Contextual Info: 2SJ227 LD L o w D riv e S e rie s VDSs = 3 0 V 2085 P Channel Power M OSFET 3 8 12 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Its height onboard is 9.5mm. • M eets radial taping. A b s o lu te M ax im u m R a tin g s a t Ta = 25°C

Contextual Info: Ordering number:EN3811 P-Channel Silicon MOSFET 2SJ226 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. unit:mm

25jz

Abstract: dpak DIODE 2SJ223 lf2a CO15 GD12T
Contextual Info: blE D 4Mtì bEGS 0 D 1 2 cì f l tì 7 b 7 •HIT4 2SJ223 , 2SJ223 s HITACHI/ OPTOELECTRONICS Silicon P Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from